30D4 diode
Abstract: 30D4 TA61C
Text: ｓ DIODE 30D4 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D4 VRRM
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30D4 diode
Abstract: 30D1 diode 30d1 30d2 diode
Text: ｓ DIODE 30D4 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D4 VRRM
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30D1/30D2/30D4
30D4 diode
30D1 diode
30d1
30d2 diode
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30D2 diode
Abstract: 30D4 diode 30D2 30D1 diode
Text: ｓ DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM
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30D1/30D2/30D4
30D2 diode
30D4 diode
30D2
30D1 diode
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30D4 diode
Abstract: 30D1 diode
Text: Type：30D4 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type30D4
30D1/30D2/30D4
30D4 diode
30D1 diode
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30D1 diode
Abstract: 30d1
Text: ｓ DIODE 30D1 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D1 VRRM
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30D1/30D2/30D4
30D1 diode
30d1
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30D1 diode
Abstract: diode 30D1 30D1 30D4 diode
Text: Type：30D1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type30D1
30D1/30D2/30D4
30D1 diode
diode 30D1
30D1
30D4 diode
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30D1 diode
Abstract: 30D2 diode 30D2 30D4 diode
Text: Type：30D2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type30D2
30D1/30D2/30D4
30D1 diode
30D2 diode
30D2
30D4 diode
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30D4 diode
Abstract: No abstract text available
Text: Type：30D4 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type30D4
30D4 diode
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oz960
Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO
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MPC7450
oz960
16b3 zener diode
Zener 13B3
zener diode 7A3
SN0210
6R-P10
16B1 zener diode
Zener Diode 13B3
q59 apple
C5763
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OZ960
Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED
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MPC7450
OZ960
22B4 diode ZENER
c5763
C1904
7A3 zener diode
UL796
258C5
58A5
zener diode 7A3
9A2 zener diode
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L6703
Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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ITP700FLEX
L6703
ISL9504
ntc 10d-7
55D8
55B3 sot23-5
32 pin Mini-DVI to VGA connector
PP3V42G3H
31d6
D7950
J5550
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RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :
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BA41-XXXXX
SheP18050
TP18051
TP18052
TP18164
TP18170
TP18172
TP18178
TP18183
TP18187
RAS 0510 SUN HOLD
sun hold RAS 0510
SUN HOLD, RAS 0510
NH82801HBM
bd3 c531 diode
schematic diagram hdmi to rca
le88clpm
U519-1
20B3 diode
schematic diagram crt tv samsung
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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YONAH667
Sheet18.
Sheet19.
Sheet20
Sheet24.
Sheet25
Sheet29.
Sheet30
Sheet32.
Sheet33.
ST T4 D560
ST D560 T4
ST 1803 DHI
B-566
u574
j5512
46d1
BA09-00009A
SAMSUNG GDDR3
54B4
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schematic diagram hdmi to rca
Abstract: GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p BA41-00745A
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MILAN CPU : Chip Set : Remarks :
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BA41-00745A
SW501
A3212ELH/HED55XXU12
100nF
MT504
TP17294
TP17297
schematic diagram hdmi to rca
GFX SE DIODE
LE88CLPM
NH82801HEM
TP16355
RAS 0510 SUN HOLD
sun hold RAS 0510
SUN HOLD, RAS 0510
f8 vga nb8p
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OZ960
Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Text: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS
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MPC7450
OZ960
zener diode 7A3
inverter 16b2 zener diode
zener 15B2
diode 21D8 10
C4237
54b6
diode 21D8
zener 9A2
11b3 DIODE ZENER
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5A00
Abstract: LCP-1250A4FDM
Text: Preliminary LCP-1250A4FDM H , LCP-1250B4QDM(T) Small Form Factor Pluggable Transceiver for Gigabit Ethernet with Digital Diagnostic Function FEATURES Compliant with SFP Transceiver SFF-8472 MSA specification Compliant with Specifications for IEEE 802.3z/Gigabit Ethernet
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LCP-1250A4FDM
LCP-1250B4QDM
SFF-8472
LCP-1250Bxxx
0625GBd
100-SM-LC-L
LCP-1250Axxx
100-M5-SN-I
850nm
5A00
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ISL9504
Abstract: "board view" macbook macbook C4130 k20 apple PP3V42G3H PP3V42 U6200 58A-6 p66 apple
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED
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ITP700FLEX
ISL9504
"board view" macbook
macbook
C4130
k20 apple
PP3V42G3H
PP3V42
U6200
58A-6
p66 apple
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ISL9504
Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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S613
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE 3A/100— 400V 30D1 30D2 30D4 FEATURES ° Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability Approx. Net Weight: 1.24 Grams MAXIMUM RATINGS \ type Voltage Rating 30D 1 30 D 2 30 D 4 Unit Symbol\^ Repetitive Peak
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A/100--
S613
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Untitled
Abstract: No abstract text available
Text: 30D1 30D2 30D4 3 A /10 0 ~ 4 0 0 V SILICON RECTIFIER DIODE FEATURES 5.8 .23 DIA » Low Forward Voltage Drop Low Reverse Leakage Current 1.5(.059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)
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bblS123
bbl5123
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30D1 diode
Abstract: 30D4 diode 30D1 30D2 30D4
Text: 30 D 1 30D2 30D4 3 A /10 0 ~ 40 0 V SILICON RECTIFIER DIODE FEA TURES 5.8 .23 DIA • Low Forward Voltage Drop - t o Low Reverse Leakage Current 1.5C059) DIA 1.3C051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)
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A/100
3C051)
bbl5123
30D1 diode
30D4 diode
30D1
30D2
30D4
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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