30L 128 Search Results

cts 10mhz oscillator

Abstract: UART Program Examples DL000D 10MHZ 16MHZ DSA003646 mitsubishi cm10
Contextual Info: Rev.1.0 Mitsubishi microcomputers M16C / 30L Group Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M16C/30L group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz

LUCENT DSP1610

Abstract: mip 4140 DSP1610 Simulator DSP1605 DSP1609 RMM2 user guide PT 10000 lucent DSP 312C0
Contextual Info: Information Manual June 1998 DSP1609 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: http://www.lucent.com/micro INTERNET: docmaster@micro.lucent.com E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 4.4 GHz to 5.0 GHz

dsp16a

Abstract: LUCENT DSP1610 finder timer type 15.21 XAB 316 intel crc circuits hardwired polynomials YL1010 54175 DSP1616 LUCENT DSP1610 data sheet dsp16a user guide
Contextual Info: Information Manual January 1998 DSP1611/17/18/27/28/29 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: INTERNET: http://www.lucent.com/micro E-MAIL: docmaster@micro.lucent.com N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103

finder timer type 15.21

Abstract: 54175 lucent DSP DSP1617 YL16 DSP1618 eccp dsp16a user guide
Contextual Info: Information Manual January 1998 DSP1611/17/18/27/28/29 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: INTERNET: http://www.lucent.com/micro E-MAIL: docmaster@micro.lucent.com N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103

TIM5053-30L

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-30L TECHNICAL DATA FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po =34.5 dBm Single Carrier Level ■ HIGH POWER P i dB =45 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN G1dB =9 dB at 5.0 GHz to 5.3 GHz

Contextual Info: TOSHIBA M ICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET T IM 5359-30L TECHNICAL DATA FEATURES : • HIGH GAIN G u b = 8.5 dB at 5.3 GHz to 5.9 GHz ■ LOW INTERM ODULATIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level ■ BROAD BAND INTERNALLY MATCHED

microwave fet IC

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER G aAs FET S E M IC O N D U C T O R TIM 4450-30L TECHNICAL DATA FEATURES: LOW INTERM O D ULA TIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level G 1dB = at ^ .4 Hz to 5-0 GHz BROAD BAND INTERNALLY MATCHED

30L 128

Contextual Info: TO SHIBA I M IC R O W A V E P O W E R | MICROWAVE SEMICONDUCTOR GaAs FET TIM 6472 30L TECHNICAL DATA FEATURES : • LOW INTERM O D ULA TIO N DISTORTION I M 3 = - 4 3 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER P-jdB = 4 4 . 5 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45 d B m a t 5 .3 G H z to 5.9 G H z

DL000D

Abstract: TB1S 10MHZ 16MHZ CM04
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DL000D

Abstract: 03751 10MHZ 16MHZ
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2033

Abstract: 380V 415v motor fusible 65k 2032-A0420C-29J 2032-A0210F 2031-A0420F
Contextual Info: Safety Isolation System ElectroGuard Overview . . . . . . . . . . . . . . . . . . . . . . 12-2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Non Combination Systems for North America . . . 12-4 Non Combination Systems

k 03j2

Contextual Info: V v . " - > . • 1 TYPETCX v ^ A,-.r V" Extended Tem perature Range Computer Grade Capacitor O FEATURES: •Long Life • Low ESR •105°C • High Ripple Current The TCX capacitor m anufactured by Aerovox is designed as a high perform ance capacitor of long life com puter grade quality and reliability. Type TCX capacitors provide low

Contextual Info: Bé h H| h M i •MÉrifli IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­

Contextual Info: a M/HITE /M IC R O E L E C T R O N IC S 128Kx32 EEPROM MODULE WE128K32-XG2X PRELIMINARY* FEATURES * Access Times of 150nS to 300nS • 5 Volt Power Supply ■ Packaging • G8-lead Hermetic CQFP, 22.4 mm (.8B0 inch square ■ Guilt in Decoupling Caps and Multiple Ground Pins for Low

EDI88130CS25CB

Contextual Info: ^ED I _ EDI88130CS Electronic Designs Inc.i High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: NU MB ER 0A * M IN PS DU D CT C AN PA TO CE RA LE L RA µH LEL N RA CE T DC ED C PA PA URR RA L R RE AL ENT LEL L . SI E M ST L D A X 0 A . MA C . (A MP IN MP X. ( S) O DU S CT DC HMS TO ANC SER ) E IE LE (µ S R H) RA ANC E TE DC D CU SE R SE RR IES MA RIES ENT

DA 2688

Abstract: 102M SE
Contextual Info: NU MB ER 0A * M IN PS DU D CT C AN PA TO CE RA LE L RA µH LEL N RA CE T DC ED C PA PA URR RA L R RE AL ENT LEL L . SI E M ST L D A X 0 A . MA C . (A MP IN MP X. ( S) O DU S CT DC HMS TO ANC SER ) E IE LE (µ S R H) RA ANC E TE DC D CU SE R SE RR IES MA RIES ENT

Surface Mount

Abstract: DA 2688 MP 130l 102M SE
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/26/10 9:36 AM Page 76 s or ct du In er w Po CE AN ST S SI HM RE O M DC DC MU ES ) ES XI RI A ERI MPS S SE M D (A TE M U CE RA XIM AN MA ER T OL EN T ES RI ) RR SE (µH CU DC E S NC . MP TA ST 0 ADUC ESI ) R MS

mps 0952

Abstract: DA 2688 102M SE
Contextual Info: s or ct du In er w Po CE AN ST S SI HM RE O M DC DC U M ES ) ES XI RI A ERI MPS S SE M D (A TE UM CE RA XIM AN MA ER T L EN TO ES RI ) RR SE H CU µ ( DC E S NC . MP TA ST 0 ADUC ESI ) R MS IN DC (OH EL M LL MU DC RA XI EL M PA MA LL U RA XIM PA A D TM

gal 16v8 programming algorithm

Abstract: GAL16V8 application notes gal16v8 national National SEMICONDUCTOR GAL16V8 gal 16v8 programming specification GAL16V8-25 25L90 gal programming algorithm GAL16V8-25L 16L8* GAL
Contextual Info: GAL16V8 National iCA Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology