30N08 Search Results
30N08 Price and Stock
Infineon Technologies AG IPD30N08S2L21ATMA1MOSFET N-CH 75V 30A TO252-3 |
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IPD30N08S2L21ATMA1 | Digi-Reel | 18,924 | 1 |
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IPD30N08S2L21ATMA1 | Reel | 2,500 | 9 Weeks | 2,500 |
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IPD30N08S2L21ATMA1 | 38,112 |
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IPD30N08S2L21ATMA1 | Cut Tape | 754 | 1 |
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IPD30N08S2L21ATMA1 | 93,349 | 1 |
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IPD30N08S2L21ATMA1 | Cut Tape | 4,503 | 0 Weeks, 1 Days | 1 |
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IPD30N08S2L21ATMA1 | 10 Weeks | 2,500 |
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IPD30N08S2L21ATMA1 | 10,000 | 2,500 |
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IPD30N08S2L21ATMA1 | 28,719 |
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ROHM Semiconductor RSQ030N08HZGTRMOSFET N-CH 80V 3A TSMT6 |
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RSQ030N08HZGTR | Cut Tape | 5,144 | 1 |
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RSQ030N08HZGTR | 23,994 |
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RSQ030N08HZGTR | Cut Tape | 2,456 | 1 |
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RSQ030N08HZGTR | 1 |
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RSQ030N08HZGTR | Cut Tape | 1,920 | 0 Weeks, 1 Days | 5 |
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RSQ030N08HZGTR | 3,000 |
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Infineon Technologies AG IAUZ30N08S5N186ATMA1MOSFET_(75V 120V( PG-TSDSON-8 |
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IAUZ30N08S5N186ATMA1 | Cut Tape | 3,109 | 1 |
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IAUZ30N08S5N186ATMA1 |
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IAUZ30N08S5N186ATMA1 | 14,810 | 1 |
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Infineon Technologies AG BSC030N08NS5ATMA1MOSFET N-CH 80V 100A TDSON |
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BSC030N08NS5ATMA1 | Cut Tape | 226 | 1 |
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BSC030N08NS5ATMA1 |
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BSC030N08NS5ATMA1 | Cut Tape | 848 | 1 |
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BSC030N08NS5ATMA1 | Reel | 30,000 | 5,000 |
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BSC030N08NS5ATMA1 | 15,000 | 27 Weeks | 5,000 |
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BSC030N08NS5ATMA1 | 5,000 |
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BSC030N08NS5ATMA1 | 10,000 | 1 |
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BSC030N08NS5ATMA1 | 11,432 |
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BSC030N08NS5ATMA1 | 29,350 |
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Carlo Gavazzi Holding AG ICB18S30N08POSENSOR PROX INDUCTIVE 8MM CYLIND |
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ICB18S30N08PO | Box | 19 | 1 |
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ICB18S30N08PO | Bulk | 10 |
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ICB18S30N08PO | Bulk | 20 | 10 Weeks | 1 |
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ICB18S30N08PO | 8 | 1 |
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ICB18S30N08PO | 29 | 3 |
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ICB18S30N08PO |
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ICB18S30N08PO | 50 |
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30N08 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE DATE SYM AUTHORITY 30N088 c WAS P E O 14791 AND R E L E A S E D |
OCR Scan |
15MR93 R0061766 30N088 01DE88 66-HS | |
optimos battery protection reverse
Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
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FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package | |
TLE7201
Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
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B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519 | |
Contextual Info: 7 THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. U3 CD Lf CM DO NOT SCALE CD CD LO CM O O Ro CONSTANT H CD CD O CM |
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140C88 REO17641 21N089 15AU89 30JN89 13AP89 18PE89 29N088 21SE88 | |
Contextual Info: THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE REVISION RECORD AUTHORITY DR CK 13AP89 REDRAWN & REVISED 29MY90 |
OCR Scan |
13AP89 29MY90 14MY91 09DE92 270C81 30N081 22DE8 28SE81 | |
PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
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B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 | |
bts 2106
Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
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B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL | |
Contextual Info: Analog Power 30N08-80D N-Channel 80-V D-S MOSFET PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 82 @ VGS = 10V 80 110 @ VGS = 4.5V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed ID(A) 21 18 Typical Applications: |
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AM30N08-80D AM30N08-80D AM30N08-80D-T1-XX 30N08-80D: | |
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
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B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 |