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IXYS Corporation IXFH30N60P MOSFETs 600V 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH30N60P		1,756			1 $9.88 10 $8.6 100 $6.24 1000 $5.45 10000 $5.45	Buy Now
TTI	IXFH30N60P	Tube			300	1 - 10 - 100 - 1000 $5.45 10000 $5.45	Buy Now
IXYS Corporation IXTH30N60P MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH30N60P		421			1 $9.84 10 $9.84 100 $6.19 1000 $5.41 10000 $5.41	Buy Now
TTI	IXTH30N60P	Tube			300	1 - 10 - 100 - 1000 $5.42 10000 $5.42	Buy Now
IXYS Corporation IXTQ30N60P MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ30N60P					1 $9.88 10 $8.47 100 $7.68 1000 $5.55 10000 $5.55	Get Quote
TTI	IXTQ30N60P	Tube			300	1 - 10 - 100 - 1000 $5.49 10000 $5.49	Buy Now
IXYS Corporation IXTT30N60P MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT30N60P					1 - 10 - 100 $6.81 1000 $5.51 10000 $4.96	Get Quote
IXYS Corporation IXFT30N60P MOSFETs 600V 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFT30N60P					1 - 10 - 100 $5.76 1000 $4.66 10000 $4.19	Get Quote

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30N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
30N60P Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	30N60P 30N60PS O-268 PLUS220 30N60P
30N60P Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
30n60p Abstract: No abstract text available Text: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V	Original	PDF	30N60P 30N60P O-268 O-268 405B2
30n60 Abstract: 30N60P PLUS220SMD Text: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings	Original	PDF	30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings	Original	PDF	30N60P 30N60PS PLUS220 30N60P O-247
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	PDF	30N60P
30N60P Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N60P VDSS ID25 RDS on Electrically Isolated Back Surface = 600 V = 17 A ≤ 250 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	30N60P 405B2 30N60P
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	30N60P 30N60PS O-247 PLUS220 O-268 30N60P
30N60P Abstract: ISOPLUS247 c5125 Text: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	PDF	30N60P 150olts 30N60P ISOPLUS247 c5125
QG SMD TRANS Abstract: 30N60P 30n60 PLUS220SMD t30n60p Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings	Original	PDF	30N60P 30N60PS PLUS220 30N60P O-247 QG SMD TRANS 30n60 PLUS220SMD t30n60p
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p