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    2SJ214

    Abstract: 2SJ172 0S0250
    Text: HITACHI 2SJ214 L ,2SJ214(S) SILICON P-CHANNEL MOS FET 10 2 I 0.3 r 4.44±0.2 HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4-V Gate Drive Device —Can be driven from 5 V 30urce • Suitable for Motor Drive, DC-DC Convertor, Power


    OCR Scan     		2SJ214 7fl-25 FOS--10VÂ 2SJ172 0S0250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­


    OCR Scan     		IRFY430CM 500Volt, S5452 PDF