30V 10.5A P-CHANNEL MOSFET Search Results

30V 10.5A p-channel MOSFET

Abstract: PT4435
Contextual Info: PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-10.5A = 18mΩ RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D 8 7

Contextual Info: AP4533GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V ▼ Good Thermal Performance RDS ON 18mΩ ▼ Fast Switching Performance ID 10.5A ▼ RoHS Compliant & Halogen-Free

KHB011N40P1

Abstract: KHB011N40F1
Contextual Info: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB011N40P1

Contextual Info: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

76107P

Abstract: ms101c DS20A TA76107
Contextual Info: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.

KHB011N40F1

Abstract: KHB011N40F2 KHB011N40P1
Contextual Info: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

76107d

Abstract: TA76107 F76107D3S F7610 dlis
Contextual Info: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive

sml8075hn

Abstract: sml7575hn
Contextual Info: SEMELAB bOE PLC 5133157 ]> M il ODDOflbb HTT ISULB MOS POWER d '“P 3 > ° 1 - 1 $ SML8075HN SML7575HN SML8090HN SML7590HN SEM E LAB 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75Q 0.75Q 0.90Q 0.90LÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

LD 7575 PS

Abstract: 8075an APT8075AN 7590 8090 apt8090an APT7575AN APT7590AN APT8075 8090A
Contextual Info: ADVANCFD POWFR TECHNOLOGY QEST'ID'I GQODMÔM 7Ü5 • AVP M'ìE 1> AD VAN CED P O W ER 'Xm - \ S Tec h n o lo g y APT8075AN APT7575AN APT8090AN APT7590AN POWER MOS IV 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75 0.75 0.90 0.90 £i Í2 £2 fl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

090Q

Abstract: 0S3C APT8075HN 80-75H 8075HN
Contextual Info: ADVANCED POIilER TECHNOLOGY b lE D • 0E57TCH 0000825 flTfl H A V P A dvanced P o w er Te c h n o lo g y POWER MOS IV _ APT8075HN 800V 11.5A 0.75Q APT7575HN 750V 11.5A 0.75D APT8090HN 800V 10.5A 0.90Q APT7590HN750V 10.5A 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SEC550

Abstract: sml5560cn lm 5560 122T-T 200DG
Contextual Info: _ S E ME L A B LOE D PL C 0133107 OODOÛlfl 737 H S M L B MOS POWER = ^ = llll T SML6060CN SML5560CN SML6070CN SML5570CN SEME LAB 600V 550V 600V 550V 4 ;3 f l - i 3 10.5A 10.5A 9.5A 9.5A 0.60ft 0.60ft 0.70ft 0.70ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT6060CN

Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Contextual Info: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 ‘iOT □ □ □0 7 t eJ IMT B A V P A d v a n ced W /A p o w e r rÆ ÊÊ T e c h n o l o g y POWER MOS IV APT6060CN APT5560CN APT6070CN APT5570CN 600V 550V 600V 550V 10.5A 10.5A 9.5A 9.5A 0.60Q 0.60Q

6070AN

Abstract: t606 APT5560AN APT5570AN APT6060AN APT6070AN
Contextual Info: ADVANCFD POUFR TECHNOLOGY 4=î E 0E57W » 000047b b3b * A V P A dvanced R o w e r t 2p m 5 Te c h n o l o g y O D - M APT6060AN 600V 11.5A 0.60 Q APT5560AN 550V 11.5A 0.60 Q APT6070AN 600V 10.5A 0.70 ft APT5570AN550V 10.5A 0.70 Q Ò s POWER MOS IV _

21N50ES

Abstract: 21N50 TO3P package to-247 to-220 to-3p 21N50E
Contextual Info: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

21N50ES

Abstract: ic MARKING QG FMH21N50ES
Contextual Info: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Contextual Info: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling

Contextual Info: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

12v 1200W DC POWER SUPPLY SCHEMATIC

Abstract: DQ65033QMA06NNS 110VDC to 12vdc converter 601 Opto isolator 1000w buck boost converter RTCA DO-160 POWER 12v 28V 3A 60W DC-DC htc legend DC converter 50A 100V NQ04W33SMA16PSS
Contextual Info: VE A AD R V C U N C HE POW T G ER N I Fa l l 2 0 1 0 C omplete Product C atalog Founded in 1997, SynQor has become the technology, quality and service leader for high efficiency dc-dc converters for the telecom/datacom marketplace. The PowerQor®, BusQor®,

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

12A 650V MOSFET

Abstract: kelvin 1102 piezoelectric circuit charger theory of dac IC 0808 nec Digital Clock Driver 1708f ceramic capacitors 1708
Contextual Info: LTC1708-PG Dual Adjustable 5-Bit VID High Efficiency, 2-Phase Current Mode Synchronous Buck DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1708 is a dual adjustable 5-bit VID programmable step-down switching regulator controller that drives

ceramic capacitors 1708

Contextual Info: LTC1708-PG Dual Adjustable 5-Bit VID High Efficiency, 2-Phase Current Mode Synchronous Buck DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1708 is a dual adjustable 5-bit VID programmable step-down switching regulator controller that drives

NTC thermistor 100K

Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram 550nH president alim FAN53168 FAN53418 TSSOP28 TSSOP-28 CPU AC Loadline intel 845 MOTHERBOARD pcb CIRCUIT diagram
Contextual Info: www.fairchildsemi.com FAN53168 6-Bit VID Controlled 2-4 Phase DC-DC Controller Features General Description • Precision Multi-Phase DC-DC Core Voltage Regulation – ±10mV Output Voltage Accuracy Over Temperature • Differential Remote Voltage Sensing