30V 20A POWER Search Results

Contextual Info: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,

HUF76107P3

Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,

Contextual Info: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses

Contextual Info: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses

Contextual Info: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

JESD97

Abstract: STSJ100NHS3LL
Contextual Info: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STS20NHS3LL
Contextual Info: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STS20NHS3LL
Contextual Info: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STSJ100NHS3LL
Contextual Info: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

Contextual Info: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

Contextual Info: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model

TA49235

Abstract: 99E-1 rfd20n diode 736
Contextual Info: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI

TA49235

Abstract: 20n03
Contextual Info: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V

IRHYS593Z30CM

Abstract: IRHYS597Z30CM 20A400
Contextual Info: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*

Contextual Info: FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0mΩ Features General Description ̈ Max rDS on = 4.0mΩ at VGS = 10V, ID = 20A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

Contextual Info: 48Vdc Input, 30Vdc@20A Output Full-brick DC-DC Converter AGF600-48S30 Description The AGF600-48S30 is a single output DC-DC converter with standard full-brick outline and pin configuration. It delivers up to 20A output current with 30V output voltage. Above 94.0%

Contextual Info: STL80NF3LL N-channel 30V - 0.0045Ω - 80A - PowerFLAT 6x5 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STL80NF3LL 30V <0.0055Ω 20A (1) 1. When mounted on FR-4 board of 1in², 2oz Cu., t<10sec • Improved die-to-footprint ratio

JESD97

Abstract: K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

stk8001

Abstract: K800 JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

stk8001

Abstract: JESD97 K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested