30V 600A IGBT Search Results

IRGDDN600K06

Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Contextual Info: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

DOUBLE INT-A-PAK Package

Contextual Info: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

IRGDDN600M06

Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
Contextual Info: International S Rectifier Provisional Data Sheet P D -9 .1176 IRGDDN600M06 IRGRDN600MQ6 "SINGLE SWITCH" IGBT DOUBLE -A-PAK Low conduction loss IGBT IR G D D . IR G R D . ? • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

IRF 902

Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
Contextual Info: PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

GA600HD25S

Abstract: igbt "internal thermistor" int-a-pak
Contextual Info: PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

IRF 902

Abstract: GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25
Contextual Info: PD -50071 PRELIMINARY SINGLE SWITCH IGBT DOUBLE INT-A-PAK GA600GD25S StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

ST T4 3560

Abstract: T2 AL 250V 150Vt GA600HD25S
Contextual Info: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

TC-100

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KGF40N60KDA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

IGBT DRIVE 50V 300A

Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Contextual Info: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

GA600GD25S

Abstract: CGC SWITCH OF IGBT 1000A 1000V
Contextual Info: PD - 50071A PRELIMINARY GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

OM9405SM

Abstract: Omnirel
Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9405SM DUAL IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged Plug-In Package Built in Short Circuit Protection with Fault Output

KGT50N60KDA

Abstract: 50N60KDA KGT50N60 25a812 gate turn-off 50N60 KEC LOT NO
Contextual Info: SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

30n60k

Abstract: KGT30N60KDA kgt30n60
Contextual Info: SEMICONDUCTOR KGT30N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

FM2G300US60

Contextual Info: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

20N60KDA

Abstract: KGT20N60KDA
Contextual Info: SEMICONDUCTOR KGT20N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

FMBL1G300US60

Contextual Info: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FM2G300US60

Contextual Info: FM2G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

k15t60

Abstract: FAST RECOVERY DIODE 200ns 8A 40V IKP15N60T PG-TO-220-3-1 marking k15t60 ikp15n60
Contextual Info: IKP15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s

Contextual Info: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s

k15t60

Abstract: IKP15N60T
Contextual Info: IKP15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: IKA15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs