30V VGS Search Results

p100NF

Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

STB200NF03

Abstract: STB200NF03-1 STB200NF03T4 STP200NF03 JESD97 TO247 package dissipation
Contextual Info: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)

JESD97

Abstract: STB200NF03 STB200NF03-1 STB200NF03T4 STP200NF03
Contextual Info: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)

Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

AOP604

Contextual Info: AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A

transistor BF245

Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
Contextual Info: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current

Contextual Info: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)

AOP601

Abstract: AOP601L
Contextual Info: AOP601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

P70NF

Abstract: B70NF03L STB70NF03L-1 JESD97 STB70NF03L STP70NF03L
Contextual Info: STB70NF03L STP70NF03L - STB70NF03L-1 N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB70NF03L 30V < 0.0095Ω 70A STP70NF03L 30V < 0.0095Ω 70A STB70NF03L-1 30V < 0.0095Ω

Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

mdd1653

Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Contextual Info: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

transistor BF245

Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
Contextual Info: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V

C3025LD

Contextual Info: DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 85mΩ @ VGS = -4.5V Package ID MAX TA = +25°C

Contextual Info: STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS on ID STB45NF3LL 30V <0.018Ω 45A STP45NF3LLFP 30V <0.018Ω 45A STP45NF3LL 30V <0.018Ω 27A • Optimal RDS(on) x Qg trade-off @ 4.5V

C3025LS

Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •

JESD97

Abstract: STB11NM60FD STB11NM60FD-1 STB45NF3LL STP11NM60FD STP45NF3LL STP45NF3LLFP p11nm60
Contextual Info: STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS on ID STB45NF3LL 30V <0.018Ω 45A STP45NF3LLFP 30V <0.018Ω 45A STP45NF3LL 30V <0.018Ω 27A • Optimal RDS(on) x Qg trade-off @ 4.5V

C3025LS

Abstract: diode n1s
Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •

C3025LS

Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  

3f381

Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

C723

Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Contextual Info: Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 1/7 CYStech Electronics Corp. 30V N-Channel Logic Level Enhancement Mode MOSFET MTB55N03N3 BVDSS RDSON Max ID 30V 55mΩ 3.5A Features • VDS=30V RDS(ON)=55mΩ@VGS=10V, ID=3.5A RDS(ON)=85mΩ@VGS=4.5V, ID=2A

3f381

Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

3f381

Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,