31161 Search Results

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70

SIEMENS tle 420

Abstract: ic 7014
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

SIEMENS BST

Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Information I 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

fopf

Abstract: ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5
Contextual Info: S IE M E N S 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation Output unlatched at cycle end allows tw o ­ dim ensional chip selection Read, write, read-m odify-write, CAS-before-RAS refresh, RAS-only refresh,

Contextual Info: M O SE L V I T E L I C P R E LIM IN A R Y IN FO R M A TIO N V62C 31161024 6 4 K x 16 STA TIC R A M Features Description • High-speed: 35, 70 ns ■ Ultra low DC operating current of 4mA max. - TTL Standby: 0.5 mA (Max.) - CMOS Standby: 10 nA (Max.) ■ Fully static operation

d8430

Abstract: 18165BSJ-60 BST60
Contextual Info: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time

Contextual Info: M O S E L V IT E LIC PRELIMINARY INFORMATION 31161024 6 4 K x 16 HIGH SPEED STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 31161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are

Contextual Info: M O SEL V IT E L IC P R E LIM IN A R Y IN FO R M A TIO N V 61C 31161024 6 4 K x 16 H IG H SPEED STA TIC R A M Features Description • ■ ■ ■ ■ The V 61C 31161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are

Contextual Info: 31161 Product Details - Tyco Electronics Corporate Home | Page 1 of 2 Worldwide Electronic Components | Segments | Who We Are Search Products Documentation Resources My Account Customer Support 31161 Product Details Ring and Spade Tongue Terminals Always EU RoHS/ELV Compliant Statement of

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 3116133 Construction Diameters (In) 1) Component 1 1 X 1 HOOKUP a) Conductor 6 (133(7x19)/27) AWG 27% Nickel Platted

V62C31161024

Abstract: k3570
Contextual Info: M OSEL VI TELI C P R E LIM IN A R Y IN FO R M A TIO N V 62C 31161024 6 4 K x 16 STA TIC R A M Features Description • High-speed: 35, 70 ns ■ Ultra low DC operating current of 4mA max. - TTL Standby: 0.5 mA (Max.) - CMOS Standby: 10 jaA (Max.) ■ Fully static operation

SIEMENS BST

Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Contextual Info: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC

Q67100-Q1164

Abstract: SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60
Contextual Info: HYB 3116160BSJ/BST L -50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k-Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 ˚C operating temperature Performance:

3165805AT-60

Abstract: Q67100
Contextual Info: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60

Contextual Info: 7-7. IF Amp ICs and I.Q. Modulator T A 31138F N . 409 T A 31161F N . 420 T A 31170F N .

511000BJ-70

Abstract: Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511
Contextual Info: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Memory Components HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3116400BJ-50 HYB 3116400BJ-60 HYB 3116400BJ-70 HYB 3116400BT-50 HYB 3116400BT-60 HYB 3116400BT-70

Z62D

Contextual Info: TYPES SN54LS597, SN54LS598, SN74LS597, SN74LS598 8-BIT SHIFT REGISTERS WITH INPUT LATCHES 0 2 6 3 5 , J A N U A R Y 1 9 8 1 - R E V lS E D D E C E M B E R 1 9 8 3 S N 5 4 L S 5 9 7 . . . J PACKA GE S N 7 4 1 S 5 9 7 . . . J OR N PACKAGE 8 -B it Parallel Storage Register Inputs

N25Q256

Contextual Info: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection

LA1260

Abstract: U2501b
Contextual Info: PIEZO FILTERS CERAMIC DISCRIMINATORS FOR FM RECEIVER tnuffntn /nnoyntcr in EU cfocnics C D A 10.7MHz The CDA 10.7 line of ceramic discriminators are resonate devices that offer adjustment free audio detection in both wide and narrow bandwidths. These IC dependent

Contextual Info: TOSHIBA TMP87CM71/N71/P71 UNDER DEVELOPMENT CMOS 8-BIT MICROCONTROLLER TMP87CM71F, TMP87CN71F, TMP87CP71F The 87CM71/N71/P71 are the high speed and high perform ance 8-bit single chip m icrocomputers. These MCU contain 6-bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.

Solistrand 65505

Abstract: tyco 30692 E13288 m7928 7 AMP 59973-1 crimper MS20659 M7928/7 MIL-T-7928g 74909 m 52707
Contextual Info: SOLISTRAND, Budget and DIAMOND GRIP Uninsulated Terminals and Splices Catalog 65505 Revised 9-00 Product Facts • SOLISTRAND Terminals and Splices ■ Utilize a brazed seam ■ Applied with “W” crimp tooling ■ Available in wire sizes 26 AWG – 600 MCM

N25Q128A13ESE40

Abstract: n25q128a13 N25Q128A13E N25Q128A13E1240 SO8W Package N25Q128A13ESF40 n25q128a N25Q128
Contextual Info: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •

N25Q128A13ESE40

Abstract: DQ03-0 XIP2 N25Q128A13ESE n25q128a13 N25Q128A N25Q128A13EF7
Contextual Info: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •