3135* INTEL Search Results

Contextual Info: M39003/01-3135 aka M39003/01-3135 T212C685K075SS CSR13H685KS Capacitor, tantalum, 6.8 uF, +/-10% Tol, 75V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 7.34 17.42 20.88 0.64 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:

c 3135-3

Abstract: 2044B 2SA1731
Contextual Info: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

2044B

Abstract: 2SA1731 ITR04425
Contextual Info: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

GR-1089-CORE

Abstract: I3124 TISP3070H3SL TISP3095H3SL TISP3125H3SL TISP3210H3SL TISP3250H3SL TISP3350H3SL
Contextual Info: TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS Ion-Implanted Breakdown Region Precise D.C. and Dynamic Voltages

Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

SP3070H3

Abstract: SP3250H3 sp3070h Pi 3115 SP3350H3 SP3080H3 TISP3250H3SL THRU TISP3350H3SL SP-3350 SP3125 SP3135
Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

GR-1089-CORE

Abstract: I3124 TISP3070H3SL TISP3095H3SL TISP3125H3SL TISP3210H3SL TISP3250H3SL TISP3350H3SL
Contextual Info: TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK JANUARY 1999 - REVISED MAY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

20/SP3070H3

Abstract: SP3070H3 SP3350H3
Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS ● Ion-Implanted Breakdown Region

intel 4308

Abstract: k 3918 regulator counter 4793 IMX135 4929 ha 1406 ha SEDI230 c 1406 ha
Contextual Info: SEDI230 Series SED1230 Series LCD DRIVER-CONTROLLER • DESCRIPTION The SED1230 Series are intelligent C M O S LCD controller-drivers with the ability to display characters 5 x 7 and icons. The SED1230 Series communicates with a high-speed microprocessor such as the Intel

SN 8 p 2714 sb

Abstract: c 1406 ha TRW POWER SN 4929 ha 1406 ha m940
Contextual Info: SED1230 Series LCD DRIVER-CONTROLLER • DESCRIPTION The SED1230 Series are intelligent CMOS LCD controlier-drivers with the ability to display characters 5 x 7 and icons. The SED1230 Series communicates with a high-speed microprocessor such as the Intel

LW 4933

Abstract: LA 4127 3808 divider D12301
Contextual Info: SED1230 Series LCD DRIVER-CONTROLLER DESCRIPTION T he S E D 1 2 30 S e rie s are in te llig e n t C M O S LCD c o n tro lle r-d rive rs w ith th e a b ility to d isp la y ch a ra cte rs 5 x 7 and icons. The SED1230 Series com m unicates with a high-speed m icroprocessor such as the Intel

Contextual Info: AZ23C2V7-AZ23C51 Surface-mount Dual Zener Diode Voltage range 2.7-51 Volts 300m Watts Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Dual zeners in common-anode configuration 300 mW power dissipation rating Ideally suited for automated insertion

Contextual Info: DZ23C2V7-DZ23C51 Surface-mount Dual Zener Diode Voltage range 2.7-51 Volts 300m Watts Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Dual zeners in common-cathode configuration 300 mW power dissipation Ideally suited for automated insertion Vz for both diodes in common case is ƙ5%

SUD50N03-06P

Contextual Info: SPICE Device Model SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUR50N03-06P

Contextual Info: SPICE Device Model SUR50N03-06P Vishay Siliconix N-Channel 30-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

MLC4082B

Contextual Info: T ' H 3 - Z Ordering num ber: EN 3 7 3 4 SANYO SEMICONDUCTOR CORP S3E TTTTOTb OOlQBbb 5=14 • T S A ü » MLC4082B No.3734 i SAXYO CMOS Standard Logic i Dual 4-Input AND Gate The MLC4082B is a 4-input AND logic IC (equivalent to B series having such features as wide operating

3604-3

Contextual Info: SANYO SEMI CONDUCTOR CORP O rd e rin g n u m b e r: E N 3 6 0 4 S3E J • 7 , , 707t 00103äl | ö I U ^ B T S A J T - H I I _ M L C 4 0 1 2 B N» 3604 mm 3 ~ Z - SA \Y O CMOS Standard Logic Dual 4-Input N A ND Gate The MLC4012B is a 4-input NAND logic IC (equivalent to B series having such features as wide

8202-M

Abstract: 8202M
Contextual Info: SANYO SEMICONDUCTOR CORP S3E D 7 tn ? 0 7 b ODI OSEE bñb • TSAJ O rd e rin g number: EN3605 r - V - 2 / j MLC4071B No.3605 SA\YO CMOS Standard Logic i Quad 2-Input OR Gate The MLC4071B is a 2-input OR logic IC equivalent to B series having such features as wide operating

Contextual Info: -' O rd e rin g n u m b e r : EN 373 1_j H 3 ~ "2- SANYO SEMICONDUCTOR CORP No-3731 S3E D • 7 c^ 7 D 7 b GG1G37Ô SOb B T S A J / / _ SA\YO MLC4Q23B CMOS S tandard Logic

912I st

Abstract: TS9121 912AIY 912I TS912 TS912A 912IY st
Contextual Info: TS912 Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads

912I st

Contextual Info: TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier Datasheet − production data Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ.

912I st

Abstract: TS912 TS912A 912BI st 912i
Contextual Info: TS912 Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads

Contextual Info: TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ. ■ Low input offset voltage: 2 mV max.

912I st

Abstract: 912I TS912BIDT 912BI TS912 TS912A
Contextual Info: TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ. ■ Low input offset voltage: 2 mV max.