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    3155 POWER TRANSISTOR Search Results

    3155 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3155 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3155 power transistor

    Abstract: ZTX214C equivalent ZTX214C DSA003764
    Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 – MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO


    Original     		PDF ZTX214C -10mA, -100mA, 200Hz, 100MHz 15KHz 3155 power transistor ZTX214C equivalent ZTX214C DSA003764

    Untitled

    Abstract: No abstract text available
    Text: TN6726A / NZT6726 TN6726A NZT6726 C C B TO-226 B SOT-223 E C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings*


    Original     		PDF TN6726A NZT6726 TN6726A O-226 OT-223 O-226

    BF 6591

    Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
    Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz


    Original     		PDF NE685M13 NE685M13 BF 6591 transistor on 4409 2SC5617 NE685 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215

    transistor D 4515

    Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
    Text: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722


    Original     		PDF BRLCD/0201 286-CJ33 transistor D 4515 PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226

    TOROIDS transformer

    Abstract: GP 841 Diode
    Text: AN ALO G D E V IC E S 5-Bit Programmable Triple Power Supply Controller for Pentium III Processors ADP3155 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent O ptim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant


    OCR Scan     		PDF ADP3155 TSSOP-20 20-Lead RU-20 TOROIDS transformer GP 841 Diode

    3155 power transistor

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO


    OCR Scan     		PDF ZTX214C -10hA, -100mA, -10mA, 100MHz 200Hz, 15KHZ 3155 power transistor

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94_ FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		PDF ZTX214C 001G35S

    A 3131

    Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
    Text: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise


    OCR Scan     		PDF 3120/C, 3121/C 3122/C, 3123/C, 3124/C, 3125/C 3126/C 3128/C, 3129/C 3130/C A 3131 CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125

    c 3725 transistor

    Abstract: 2N3725 3725 transistor 3725
    Text: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V


    OCR Scan     		PDF G-3155 c 3725 transistor 2N3725 3725 transistor 3725

    ZTX214C

    Abstract: T092 ZTX300
    Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage


    OCR Scan     		PDF lc-10mA, -10mA, -100mA, f-100MHz U-200MA 200Hz, 15KHz ZTX214C T092 ZTX300

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com ­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise


    OCR Scan     		PDF 16-LEAD 10-LEAD 24-LEAD 12-LEAD 40-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor


    OCR Scan     		PDF 14-LEAD 16-LEAD 10-LEAD 24-LEAD

    1RFD120

    Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
    Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode


    OCR Scan     		PDF IRFD210 IRFD211 IRFD212 IRFD213 I0I01Â 1RFD120 6ati T3B diode 2s4 4pin XSTR

    Untitled

    Abstract: No abstract text available
    Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm


    OCR Scan     		PDF 2SC3022 2SC3022 520MHz,

    irfd211

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h


    OCR Scan     		PDF IRFD211 IRFD212 IRFD213

    transistor equivalent table

    Abstract: 3155 power transistor P6042 transistor crossover
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 D esigner’s Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for


    OCR Scan     		PDF 2N6836 P-6042 transistor equivalent table 3155 power transistor P6042 transistor crossover

    2SC1365

    Abstract: NE741 2sc1252 74113 NE74100
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low


    OCR Scan     		PDF NE74100 NE74113 NE74114 NE741 E74100) NE74114 E74100, NE74100 2SC1365 2sc1252 74113

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan     		PDF IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#

    Untitled

    Abstract: No abstract text available
    Text: ÂV A N T E K Q INC a v a 44E D n t e El 1141%!= 0DQÔ07S T BIAVA U T O /U T C 1511 S eries T h in -F ilm C a s c a d a b ie A m p lifie r 5 to 1500 M H z k FEATURES APPLICATIONS • Frequency Range: 5 to 1500 MHz • Noise Figure: 3 .5 d B T y p • Low Power Consumption


    OCR Scan     		PDF

    D-90491

    Abstract: PJ 1179
    Text: SALES OFFICES EUROPE AMERICAS DENMARK ITALY BRAZIL 2730 HERLEV Herlev Torv, 4 Tel. 45-44 94.85.33 Telefax: (45-44) 948694 20090 ASSAGO (MI) V.le Milanofiori - Strada 4 - Palazzo A'4/A Tel. (39-2) 57546.1 <10 linee) Telefax: (39-2) 8250449 05413 SÀO PAULO


    OCR Scan     		PDF TeW39-51) i39-6) 286-CJ33 55-11i SF-08150 Ga6814 D-90491 PJ 1179

    Discriminator sot-23-5

    Abstract: T893
    Text: Semiconductor, Inc. TC44 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • ■ The TC44 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 pA operating current and small surfacemount packaging. Each part is laser trimmed to the desired


    OCR Scan     		PDF OT-23-5 OT-89-3 OT-89 OT-23-5: OT-23-5/SOT-89: OT-23-5 OT-89-3 Discriminator sot-23-5 T893

    LM339

    Abstract: No abstract text available
    Text: National LP339 & Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of lour independent voltage compara­ tors designed specifically to operate from a single power supply and draw typically 60 /j.A of power supply drain cur­


    OCR Scan     		PDF LP339 LP339 TL/H/5226-23 TL/H/522B-24 TL/H/5226-20 TL/H/5226-27 TLVH/5226-29 LM339

    2H2222

    Abstract: 2H222 LM339 1S47b schematic diagram 50 VDC POWER SUPPLY VOLTAGE LEVEL RELAY SM 125 220 156 power supply schematic diagram transistor 79t AN-450 LP339M
    Text: LP339 National Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of four independent voltage compara­ tors designed specifically to operate from a single power supply and draw typically 60 ¡iA of power supply drain cur­


    OCR Scan     		PDF LP339 2H2222 1/4LP339^ LP339 TL/H/5226-29 TL/H/5226-27 TL/H/5226-30 TL/H/5226-28 b5D1124 2H222 LM339 1S47b schematic diagram 50 VDC POWER SUPPLY VOLTAGE LEVEL RELAY SM 125 220 156 power supply schematic diagram transistor 79t AN-450 LP339M

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E