3180 DIODE Search Results

LD 7576 PS

Abstract: Laser Diode Frame Type ld 7576 DL-3180-121 3180 diode
Contextual Info: Ordering number : ENN7576 Infrared Laser Diode DL-3180-121 DL-3180-121 Infrared Laser Diode Frame Type Package Dimensions 1.75 3. 3 1.41 2.8 0.8 0.21 • Wavelength : 790 nm (Typ.) • Frame type • Ultra compact lightweight thin package • Straight leads

790nm

Abstract: DL-3180-121
Contextual Info: Infrared Laser Diode DL-3180-121 Features Tolerance : ±0.2 Unit : mm Package • Wavelength : 790 nm Typ. • Frame type : compact, light weight, thin package • Low threshold current : Ith = 20 mA (Typ.) • PIN photodiode built-in for light output monitor

Contextual Info: 3180 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage600mí @I(FM) (A) (Test Condition)34 @Temp. (øC) (Test Condition)25’

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB710-RT1 n COLLECTOR Motorola Preferred Device D nr 2 1 BASE EMITTER M CASE 3180-04, STYLE 1 SC-59 MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage

rb marking code

Abstract: lta 601 RB marking
Contextual Info: MSD601-RT1* MSD601-ST1 CASE 3180-03, STYLE 1 MAXIMUM RATINGS T A = 25 C Rating CO LLEC TO R Symbol Value Unit V dc C o lle c to r-B a s e V oltage v (B R )C B 0 30 C o lle c to r-E m itte r V olta g e v (B R )C E O 25 V dc E m itte r-B a s e V o lta g e

AR2004LT

Abstract: 3180 diode
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. + 39 010 6556234 - Fax + 39 010 6557519 Sales Office: Tel. + 39 010 6556775 - Fax + 39 010 6442510 AR2004LT Repetitive voltage up to

ANSALDO

Abstract: AR2004LT Ansaldo SPA
Contextual Info: ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori RECTIFIER DIODE Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - AR2004LT Repetitive voltage up to Mean forward current

MZC400TS60U

Abstract: MZK400TS60U 3180 diode
Contextual Info: MZC400TS60U  PRELIMINARY Fast Recovery Epitaxial Diode INT-A -PAK MZK400TS60U Ultra-FastTM Speed FRED Features • International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour

H11K1

Abstract: H11K
Contextual Info: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors

Contextual Info: PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5504 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE

HLIK-1

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D 74bbfl51 000ME1E H ä TY O ptoisolator Specifications _ H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H11K series consists o f a gallium -alum inum -arsenide, in frared

152w

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Sw itching Diodes M1MA151WAT1 M l MA152WAT1 M otorola P referred Device« These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the

ana 650

Abstract: ic ana 650 UZ814 UZ815 JDO-214AC
Contextual Info: Zener Regulator Diodes Part Number ! Microsemi Division Package : Outline Type A DO-214AC SMBG A A DO-41 A A A DO-41 A DO-214AC SMBG A A DO-41 A DO-214AC SMBG DO-41 A A DO-41 A DO-214AC SMBG DO-41 A A DO-41 A DO-214AC SMBG A A DO-41 A DO-214AC SMBG A A DO-41

H11K1

Abstract: H11K2 tic 2250 cy269
Contextual Info: Optolsolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, in frared em itting d io d e co u p led with two h ig h voltage silicon D arlingtonco n n ected p h o to tran sisto rs w hich have integral base-em itter resistors

Contextual Info: PHOTO DIODE NR8300FP-CC φ 30 m InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 5 nA The NR8300FP-CC is an InGaAs avalanche photo diode module with single mode fiber. It is designed for optical test

NX7528BF-AA

Abstract: NX7528BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7528BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 60 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 80 mW at IFP = 400 mA Pulse Conditions: Pulse width (PW) = 10ms, Duty = 1% NEC's NX7528BF-AA is a 1550 nm Multiple Quantum Well

3040pt

Contextual Info: PBYR3035PT PBYR3040PT PBYR3045PT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in switched-mode

NX7329BB-AA-AZ

Abstract: NX7329BB-AA
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7329BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 25 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 50 mW at IFP = 400 mA, Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1% NEC's NX7329BB-AA is a 1310 nm Multiple Quantum Well

NX7327BF-AA

Abstract: NX7327BF-AA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 110 mW MIN NX7327BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 180 mW at IFP = 1000 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7327BF-AA is a 1310 nm Multiple Quantum Well

NX7529BB-AA

Abstract: NX7529BB-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7529BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 20 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 40 mW at IFP = 400 mA, NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate

m3181

Abstract: 3045Pt 3040PT PBYR3035PT PBYR3040PT 076-AA PBYR3045PT R2M* Avalanche Diode
Contextual Info: PBYR3035PT PBYR3040PT PBYR3045PT PHILIPS INTERNATIONAL 5bE D 711005b DDmTTH 7bG • P H I N 't-û 3 -tr SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in switched-mode

NX7527BF-AA

Abstract: NX7527BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate

NX7328BF-AA

Abstract: NX7328BF-AA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well

NX7361JB-BC

Abstract: NX7361JB-BC-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode