3187 TRANSISTOR Search Results

3187 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

3187 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA745 Abstract: C4555 SA174 C-4555 c455 2SA1745 2SC4555 E1140 24555 Contextual Info: Ordering number:EN 3187 2SA1745/2SC4555 PNP/NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose _ _ _ Amp Applications Features • Very small-sized package permitting the 2SAl745/2SC4555-applied sets to be made small and slim • Low collector-to-emitter saturation voltage	OCR Scan	2SA1745/2SC4555 2SAl745/2SC4555-applied 2SA1745 2SA745 C4555 SA174 C-4555 c455 2SA1745 2SC4555 E1140 24555	PDF
C-4555 Abstract: c4555 Contextual Info: O rd e rin g n u m b n r: EN 3 1 8 7 2SA1745/2SC4555 No.3187 PNP/NPN Epitaxial Planar Silicon Transistor S A \Y O Low-Frequency G eneral-Purpose _Amp A pplications Features •Very small-sized package perm itting the 2SAl745/2SC4555-applied sets to be made small and slim	OCR Scan	2SA1745/2SC4555 2SAl745/2SC4555-applied 2SA1745 200mA 2SA1745/2SC4555 2SA1745 2SC4555 7219YT 1745/2S 1745/2SC C-4555 c4555	PDF
bc 853 npn transistor Abstract: Transistor - BC 547, CL 100 Contextual Info: LIN Doc #.*3187 € H i n M I T he I nfinit e f / i n LX3187 ï t K I I I I C I K M N I C S P ow er of S I n n o v a t io n ervo P A D ctuator r e l i m i n a r y D ESC RIPTIO N The LX3187 is a transconductor power driver for the voice coil actuator in high-performance disk drive	OCR Scan	LX3187 LX3187 11-bit E53A00 bc 853 npn transistor Transistor - BC 547, CL 100	PDF
ZTX510 Abstract: DSA003768 Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 TYPICAL CHARACTERISTICS 1000 VCB=-5V f=100MHz 600 IC - mA fT - (MHz) 800 400 IB=-5.0mA IB=-4.5mA IB=-4.0mA -200 IB=-3.5mA IB=-3.0mA IB=-2.5mA -150 IB=-2.0mA -10 -20 -30 -40 -100 -5 PARAMETER SYMBOL	Original	ZTX510 100MHz 400MHz -10mA, -30mA, -100mA, -10mA* ZTX510 DSA003768	PDF
Contextual Info: 19- 7186; Rev 0; 2/97 > k l > J X I > k l ± 15kVESD -Protected, EM C-Com pliant, 230kbps, D u al R S-232 S e ria l P o rt fo r M otherboards/Desktops Features The MAX3187 complete, dual DTE RS-232 serial port meets the stringent ESD requirements of the European	OCR Scan	15kVESD 230kbps, S-232 MAX3187 RS-232 RS-232 1-0040A	PDF
Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 - MARCH 94 FEATU RES * 12 Volt V,CEO fT=400MHz ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYM BO L Emitter-Base Voltage VALUE UNIT v CBO -12 V VCEO -12 V V	OCR Scan	400MHz -100mA, -10mA* -30mA, 100MHz 140KHz 300ns.	PDF
3187 transistor Abstract: ztx51 ZTX510 Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 -MARCH 94 FEATURES * 12 V o lt V,CEO f T= 4 0 0 M H z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base V oltage C ollectbr-Em itter Voltage VALUE U N IT v CBO -12 V V V v CEO -12 Emitter-Base Voltage	OCR Scan	400MHz -10nA -10mA -30mA, 100MHz 140KHz -30rhA, ZTX510 3187 transistor ztx51 ZTX510	PDF
BD438 Abstract: BD440 transistor bd438 BD442 bd440 transistor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Symbol	OCR Scan	BD437 BD441. BD438 BD440 BD442 BD442 transistor bd438 bd440 transistor	PDF
upa dual transistor Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR U P A q00T PRELIMINARY FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz HIGH GAIN: \|S21 E\|2 = 7.5 dB TYP at 2 GHz	OCR Scan	NE680 UPA800T UPA800T-T1, bM27525 00b5771 upa dual transistor	PDF
3187 transistor Abstract: UPA800T Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T PRELIMINARY FEATURES • OUTLINE DIMENSIONS U nits in m m SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S 21 E\|2 = 7.5 dB TYP at 2 GHz	OCR Scan	UPA800T NE680 UPA800T 3187 transistor	PDF
T092 Contextual Info: PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO -25 V Collector-Emitter Voltage v CEO VEBO -25 V -5 V Continuous Collector Current !C -500 mA Power Dissipation at Tamy=25°C	OCR Scan	10-IOmA, -30mA, -100rr 100MHz 140KHz T092	PDF
Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 ISSUE 2 - MARCH 94 FEATURES * 12 Volt V CE0 * P fT=400M H z s f E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	ZTX510 amtp25Â -10nA 0Q1Q354 001G35S	PDF
5607 transistor Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • NE856M02 OUTLINE DIMENSIONS Units in mm HIGH COLLECTOR CURRENT: PACKAGE OUTLINE M02 100 mA M A X • BOTTOM VIEW NEW HIGH GAIN POWER MINI-MOLD PACKAGE (S O T -8 9 T Y P E )	OCR Scan	NE856M02 5607 transistor	PDF
RF730 Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731 Contextual Info: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:	OCR Scan	IRF730, IRF731, IRF732, IRF733 50V-400V IRF732 IRF733 rf730 RF730 IRF730 IRF731 ISF730 JBF731	PDF

2SB1615 Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538 Contextual Info: 118 • Package No. b^32fiS2 Applica tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type	OCR Scan	A2SB1610 A2SD2472 2SB1537 2SD2357 2SB1538 12SD2358 A2SB1619 A2SD2483 A2SB1611 IA2SD2473 2SB1615 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188	PDF
Contextual Info: HALL-EFFECT LA TCHES FOR HIGH-TEMPERA TURE OPERA TLON These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible	OCR Scan		PDF
GH-027 Abstract: 80 L hall effect sensor LT HALL SENSOR A3185 A3185ELT A3187 A3188 A3189 Contextual Info: Data Sheet 27609.2A 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible	Original		PDF
2SA1224 Abstract: E90115 Contextual Info: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch	OCR Scan	NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115	PDF
A3185 Abstract: A3185ELT A3187 A3188 A3189 GH-027 Contextual Info: Data Sheet 27609.2A 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible	Original		PDF
2N4209 Abstract: 2n4208 Contextual Info: MOTOROLA SC XSTRS/R F 15E D \| t3t?2SM G O A t ^ A Ö r-s'?*' s' 2N4208 2N4209 CASE 22-03, STYLE 1 TO-18 TO-206AA) MAXIMUM RATINGS Sym bol 2N4208 2N4209 Unit Collector-Emitter Voltage V cEO 12 15 Vdc Collector-Base Voltage V cB O 12 15 Vdc Emitter-Base Voltage	OCR Scan	2N4208 2N4209 O-206AA) 2N4209	PDF
marking code H.5 Sot 23-5 Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47 Contextual Info: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature	OCR Scan	TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47	PDF
BD438 equivalent Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE	OCR Scan	BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR	PDF
RP2 hall effect sensor Abstract: hall effect sensor 3144 "Brushless DC Motor" 3141 hall effect sensor 4 pin hall effect dC motor 2N4356 3059 dual 4 pin hall sensor zero crossing IC single phase reactive power circuit diagram Contextual Info: DUAL-OUTPUT HALL-EFFECT SWITCH 3235 2 3 4 GROUND 1 OUTPUT2 V CC Each sensor IC includes a Hall voltage generator, two Schmitt triggers, a voltage regulator, output transistors, and on-board reverse polarity protection. The regulator enables these devices to operate	Original	UGN3235K RP2 hall effect sensor hall effect sensor 3144 "Brushless DC Motor" 3141 hall effect sensor 4 pin hall effect dC motor 2N4356 3059 dual 4 pin hall sensor zero crossing IC single phase reactive power circuit diagram	PDF
BA3422S Abstract: TA6270 BA340 stereo preamplifier 16 pin ic BA6280AF BA313 DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK BA3310N microphone preamplifier with alc DUAL playback PRE-AMPLIFIER Contextual Info: THTTnl M o n o lith ic ICs I ICs for Audio Applications CD Amplifiers Type Function BA6280AF PWM driver for CD players BA6281F PWM driver for CD players BA6290A BTL driver for CD players BA6292 BA6294 BA6295F BA6296F BTL driver for CD players BTL driver for CD players	OCR Scan	BA6280AF TA6270 A6290A BA6290A, 10-pin BA6290 ampl121A A3413F/BA3413FS BA3422S BA340 stereo preamplifier 16 pin ic BA313 DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK BA3310N microphone preamplifier with alc DUAL playback PRE-AMPLIFIER	PDF

3187 TRANSISTOR Search Results

3187 TRANSISTOR Result Highlights (5)

3187 TRANSISTOR Datasheets Context Search

2SA745

C-4555

bc 853 npn transistor

ZTX510

3187 transistor

BD438

upa dual transistor

3187 transistor

T092

5607 transistor

RF730

2SB1615

GH-027

2SA1224

A3185

2N4209

marking code H.5 Sot 23-5

BD438 equivalent

RP2 hall effect sensor

BA3422S