31D DIODE Search Results

Contextual Info: SPECIFICATIONS Model Number TYPE 31D-1E 12N1 Parameters Test Conditions Units 31D-1E12N1 31D-1E22N1 31D-1E32N1 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 70 400 1500 Coil Resistance VDC-Max 3.6 9.6

D475

Abstract: 31DQ 31DQ03 31DQ04 C-16 sapk 31DQ05
Contextual Info: PD-2.304 International S Rectifier 31 dqo 3 31 dqo 4 SCHOTTKY RECTIFIER 3.3 Amp Description/Features Major Rating» and Characteristics Characteristics 31D Q . Units ' f AV Rectan9ular waveform 3.3 A 30/40 V lFSH tp-5yssine 470 A VF 0.55 V -40to125 °C

74605

Abstract: YS002 74604 sn200062
Contextual Info: 6381725 TEXAS INSTR CAS I C / M E M O R Y 31D 74602 SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 THERMAL RESISTANCE MEASUREMENT DEVICES D2927, SEPTEMBER 1987 * Isolated Pow er Resistor Network • Internal Therm al Sensing Device S N 2 0 0 0 6 0 . . . D PACKAGE

MN101EF31G

Abstract: MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65
Contextual Info: Cover MICROCOMPUTER MN101E MN101E31G/31D/F31G LSI User’s Manual Pub.No.21631-012E Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the

Contextual Info: flâ MICRO EL EC TRON IC S CORP DE | b D W f l f l DGODtlt 4 J ”' T- V / - 2 / Light Emitting Diodes TYPE Vf COLOUR \P nm Red Red Orange Green Yellow Orange 660 700 635 565 585 635 0.30 0.50 1.00 0.50 0,50 1,00 20 20 20 20 20 20 2 3 3 3 3 3 20 20 20 20

31DF

Abstract: 31DF 4 7 31df rectifier 31DF diode 31DF 2 7 11DF4 31DF1 31DF2 11DF2 11DF3
Contextual Info: Data Sheet No. PD-2.196 INTERNATIONAL RECTIFIER I«R 1 1 D F A IM D 3 1 D F S E R IE S 1 Amp and 3 Amp Fast Recovery Rectifiers Description/Features Major Ratings and Characteristics 11DF1 11DF2 11DF3 11DF4 31DF1 31DF2 31DF3 31DF4 Units 1.0 3.0 A , @ 50 Hr

6CWF10F

Abstract: JPF40 10DF8 11DF2
Contextual Info: International [^Rectifier Diodes Ultra-Fast Recovery 1 to 6.6 Am ps lF AV @ TC Part Number vrw m IFSM (1) @ 60 Hz (A) Max. Vf m @ 'F(AV) RihJC DC (V) (°cyw) 115 115 trr (ns) Case Outline Number (6) Notes J5 (2) 00 (A) rc ) 10DF4 10DF6 100 200 4 00 600 800

Contextual Info: MICROSEMI CORP/ MICRO SbE D • bllS'ìO? QQQ1SDS 4fl4 HI1 3L M ICRO Q U A LIT Y / SEMICONDUCTOR, INC High Voltage Diode 'T - Ö 3 ""1 * 5 H I153 Designed for High Temperature Operation Low RFI/EMI LTR. A B C D E F G H INCHES .360 Dia. .50 Dia. 3.7 1.18 Dia.

Diode 31DQ04

Abstract: 31DQ04 31DQ03 4vua
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX

DIODE 31D

Abstract: 31D DIODE
Contextual Info: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber

Contextual Info: SLD302XT SONY. 200mW High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by

LN2054

Abstract: ss452 1N2064 1N2068 1N3735 1N3743 1N4044 1N4056 300U 300a 1000v DIODE RECTIFIER
Contextual Info: Bulletin 12039 hTtemational Rectifier 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES Features A llo y diode P eak reverse vo lta g e up to 1000V P opular series fo r rough service S tandard JEDEC typ e s Stud cathode and stud anode version Typical Applications

Contextual Info: DMN3135LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 47mΩ @ VGS = 10V 4.1A 70mΩ @ VGS = 4.5V 3.3A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

Contextual Info: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

IN5417

Abstract: CAPACITOR JL 1500 AF100
Contextual Info: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n

Contextual Info: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

21dq

Contextual Info: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics

4 Shaft current transformer ILDD

Abstract: 5 MVA synchronous machine ILDD Shaft current transformer 2.5 MVA transformer 101-BA RK682 50 mva transformer buchholz relay 5 MVA generator ABB 5 MVA generator synchronous
Contextual Info: ~ ~~ f 'r;i~;~ ! B~ . """""".""'-"~-"" '""'Cc", J"' ~:ct~ij, REG 100 Series ~~ryn~~ '-' 1 MDBO2004-EN Page 1 March 1992 Changed since August 1990 Data subjecl lo change wilhoul nolice '!'~~:r Generator protection ABB Network Controi & Protectiorl SE 900017

Contextual Info: P^pi G£C PLESSEY S E M I C O N D U C T O R S DS4136-5.2 GP300LSS16S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A ^CfCONT) 600A ^C(PK) 270ns tr 590ns t. APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.

SML1001RBN

Contextual Info: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

a431 ic

Abstract: LM 2536 A431 ASTEC AS431 TO 92 ASTEC SEMICONDUCTOR AS431 A431 Programmable Voltage Reference
Contextual Info: <////> ASTEC AS431 Precision Adjustable Shunt Reference Features Description • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear

6074C

Contextual Info: February 1988 Semiconductor MM54C08/MM74C08 Quad 2-Input AND Gate General Description Features Employing complementary MOS CMOS transistors to achieve wide power supply operating range, low power con­ sumption and high noise margin, these gates provide basic

N8T26AN

Abstract: N8T28N
Contextual Info: Signetics 8T26A, 28 Bus Transceivers 3-State Quad Bus Transceiver Product Specification Logic Products FEATURES • Ideal lor: - Half-duplex data transmission - Memory interface buffers - Data routing in bus oriented systems - High current drivers - MOS/CMOS-to-TTL interface