Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    31GHZ Search Results

    31GHZ Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    F5280AVGK8 Renesas Electronics Corporation Transmit/Receive Half Duplex IC 25GHz to 31GHz Visit Renesas Electronics Corporation
    F5280AVGK Renesas Electronics Corporation Transmit/Receive Half Duplex IC 25GHz to 31GHz Visit Renesas Electronics Corporation
    SF Impression Pixel

    31GHZ Price and Stock

    ADLINK Technology Inc CORE I5-2400 3.1GHZ LGA1155

    QUAD CORE I5-2400, 3.10GHZ, 6MB CACHE, 32NM, - Bulk (Alt: CORE I5-2400 3.1GHZ LGA1155)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE I5-2400 3.1GHZ LGA1155 Bulk 13 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ADLINK Technology Inc XEON E3-1225 3.1GHZ LGA1155

    PROCESSOR, Intel Xeon E3-1275, 3.1GHz, LGA1155, ECC Memory - Bulk (Alt: XEON E3-1225 3.1GH)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XEON E3-1225 3.1GHZ LGA1155 Bulk 13 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ADLINK Technology Inc Core i7-4770S 31GHz FCLGA1150

    CPU - Central Processing Units
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Core i7-4770S 31GHz FCLGA1150
    • 1 $479.51
    • 10 $465.08
    • 100 $465.08
    • 1000 $465.08
    • 10000 $465.08
    		Get Quote

    ADLINK Technology Inc Pentium G2120 3.1GHz LGA1155

    CPU - Central Processing Units CPU, Pentium G2120, 3.10GHz, 2-Core, 3MB SmartCache, Ivy Bridge, CM8063701095801 SR0UF, Step:P0, MM# 922107
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Pentium G2120 3.1GHz LGA1155
    • 1 $118.06
    • 10 $112.48
    • 100 $109.29
    • 1000 $109.29
    • 10000 $109.29
    		Get Quote

    Kyocera AVX Components BP0EA3310A700

    Signal Conditioning Size 4617 Fc3.31GHz PB 2.62 to 4.19GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BP0EA3310A700 WAFL 24 24
    • 1 -
    • 10 -
    • 100 $23.05
    • 1000 $23.05
    • 10000 $23.05
    		Buy Now

    31GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    Untitled

    Abstract: No abstract text available
    Text: MMA-283136 28-31GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • • • Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω


    Original     		PDF MMA-283136 28-31GHz 26dBm/tone 3000mA 28GHz 31GHz. 36dBm MM0-651-6700 MMA283136

    AV02-0626EN

    Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
    Text: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based


    Original     		PDF 31GHz 33dBm 35dBm AV02-0626EN Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16

    611 084

    Abstract: No abstract text available
    Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


    Original     		PDF MW-MWE003-0301 31GHz) CKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCK02802 P03906 P04708 P05509 P06514 P07013 P07915 P11825 611 084

    CHA2069

    Abstract: No abstract text available
    Text: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20699273 8-Sep-99 CHA2069

    microwave IC

    Abstract: CHA2069RAF
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMT leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


    Original     		PDF CHA2069RAF 18-31GHz 18-31GHz DSCHA20691138 18-May-01- 18-May-01- 8-Sep-99 microwave IC CHA2069RAF

    CHA2069RAF

    Abstract: AN0005 CHA2069 microwave IC
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


    Original     		PDF CHA2069RAF 18-31GHz 18-31GHz 20ult DSCHA2069RAF1257 14-Sept-01- CHA2069RAF AN0005 CHA2069 microwave IC

    Untitled

    Abstract: No abstract text available
    Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB


    Original     		PDF TGA2594 27-31GHz 31GHz 37dBm 25dBm/tone: -36dBc -45dBc 140mA, TGA2594

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    MVB3030X103M2

    Abstract: No abstract text available
    Text: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4


    Original     		PDF TGA2595 31GHz, 22dBm: TGA2595 MVB3030X103M2

    Untitled

    Abstract: No abstract text available
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99

    Untitled

    Abstract: No abstract text available
    Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


    Original     		PDF MW-MWE003-0301 31GHz) P03906 P04708 P05509 P06514 P07013

    AN0005

    Abstract: CHA2069RAF RO4003 SMD 6 PIN IC 1s
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


    Original     		PDF CHA2069RAF 18-31GHz 18-31GHz 26GHz) DSCHA2069RAF2169 -18-June-02- AN0005 CHA2069RAF RO4003 SMD 6 PIN IC 1s

    Untitled

    Abstract: No abstract text available
    Text: MW-MWE003-0309 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


    Original     		PDF MW-MWE003-0309 31GHz) CKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCK02802 P03906 P04708 P05509 P06514 P07013 P07915 P11825

    J027

    Abstract: TGA49
    Text: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm


    Original     		PDF TGA4906-SM TGA4906-SM J027 TGA49

    TGA4512-SM

    Abstract: RO4003 Ka-band
    Text: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB


    Original     		PDF TGA4512-SM 24dBm TGA4512-SM RO4003 Ka-band

    3A001

    Abstract: Ka-band free circuit diagram of rf id
    Text: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output


    Original     		PDF TGA2575 TGA2575 32GHz 38GHz, 36dBm 3A001 Ka-band free circuit diagram of rf id

    amplifier circuit diagram 10000 watt

    Abstract: No abstract text available
    Text: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm


    Original     		PDF HMC943LP5E HMC943LP5E amplifier circuit diagram 10000 watt

    AN0017

    Abstract: CHA3694-QDG MO-220
    Text: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications,


    Original     		PDF CHA3694-QDG 31-40GHz A3694 CHA3694-QDG 31-40GHz 25dBm 24L-QFN4x4 DSCHA3694-QDG8294 AN0017 MO-220

    TGA4513

    Abstract: No abstract text available
    Text: Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513 Key Features • • • • • • • • • Primary Applications Measured Data • Satellite Ground Terminal 25 • Point to Point Radio 20 • Point to Multi Point Radio


    Original     		PDF TGA4513 200oC. TGA4513

    148235

    Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
    Text: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)


    Original     		PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-1957EN 148235 A004R AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237

    63387

    Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
    Text: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)


    Original     		PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-3942EN AV02-1288EN 63387 147709 51952 148235 A004R AMMC-6231-W10 AMMC-6231-W50 60673 82291

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions:


    Original     		PDF TGP2100 28GHz 29GHz 30GHz 31GHz 32GHz

    Untitled

    Abstract: No abstract text available
    Text: June 1997 JS9P11-AS J S 9 P 1 1 - A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point GidB Power Gain at 1dB VDS= 4.5V f= 31GHz Compression Point


    OCR Scan     		PDF JS9P11-AS 31GHz A1203 254mm