31JAN2006 Search Results
31JAN2006 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TLV3501 TLV3502 SBOS321D − MARCH 2005 − REVISED JULY 2005 4.5ns Rail-to-Rail, High-Speed Comparator in Microsize Packages FEATURES D D D D D D D DESCRIPTION HIGH SPEED: 4.5ns RAIL-TO-RAIL I/O SUPPLY VOLTAGE: +2.7V to +5.5V PUSH-PULL CMOS OUTPUT STAGE SHUTDOWN TLV3501 only |
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TLV3501 TLV3502 SBOS321D OT23-6 OT23-8 TLV350x TLV3501) | |
Contextual Info: TPS715xx Actual Size 2,15 mm x 2,3 mm www.ti.com SLVS338L – MAY 2001 – REVISED SEPTEMBER 2005 50 mA, 24 V, 3.2 µA Supply Current Low-Dropout Linear Regulator in SC70 Package FEATURES APPLICATIONS • • • • • • • • • • • • • 24-V Maximum Input Voltage |
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TPS715xx SLVS338L 50-mA MSP430 MSP430F2xx | |
ST19NA18
Abstract: stmicroelectronics eeprom AES-128 RSA 24
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ST19NA18 ST19NA18 10-year 19NA18/0702 stmicroelectronics eeprom AES-128 RSA 24 | |
SaTCR-1
Abstract: SATCR1 SaTCR-2 diseqc 1.0 twin lnb 1A56H SaTCR-1 equivalent DiSEqC 1.0 / 1.1 AN2035 AN2036
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Contextual Info: STEVAL-IFP002V1 High Side Driver - 8 Channel based on VN808 Data Brief Features p Application conforms to: IEC 61000-4-4 4kV , IEC 61000-4-5 (2kV), IEC 61000-4-6 (10kV) p 16 output channels up to 0.5A per channel p 16 digital inputs & 2 digital output p Decoupling power & microcontroller section by |
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STEVAL-IFP002V1 VN808 | |
Contextual Info: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed |
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M65KG512AB 512Mbit 512Mbit 332Mbit/s 133MHz 166MHz | |
OPA134
Abstract: PCM1725 PCM1725D PCM1725DG4 PCM1725DR PCM1725U
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PCM1725 96kHz PCM1725 256fS 384fS 16-bit 16kHz 96kHz OPA134 PCM1725D PCM1725DG4 PCM1725DR PCM1725U | |
SC70-6
Abstract: OMAP2420 OPA355 OPA358 OPA360 OPA361
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OPA361 SBOS334A OMAP242x OPA361 OMAP2420 OPA361. SC70-6 OPA355 OPA358 OPA360 | |
VISHAY BC 150
Abstract: HDU10 HBU15
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2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VISHAY BC 150 HDU10 HBU15 | |
M65KA512ABContextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM Features • 512 Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9 V (1.8 V typical in |
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M65KA512AB 512Mbit M65KA512AB | |
spru301Contextual Info: TMS320C6727, TMS320C6726, TMS320C6722 Floating-Point Digital Signal Processors www.ti.com SPRS268C – MAY 2005 – REVISED NOVEMBER 2005 1 TMS320C6727, TMS320C6726, TMS320C6722 DSPs 1.1 • • • • • • Features C672x: 32-/64-Bit 300-MHz Floating-Point DSPs |
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TMS320C6727, TMS320C6726, TMS320C6722 SPRS268C 32-Bit-Wide 10-MHz spru301 | |
Contextual Info: TPA3100D2 HTQFP QFN www.ti.com SLOS469C – OCTOBER 2005 – REVISED DECEMBER 2005 20-W STEREO CLASS-D AUDIO POWER AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • 20-W/ch into an 8-Ω Load From a 18-V Supply 10-W/ch into an 8-Ω Load From a 12-V Supply |
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TPA3100D2 SLOS469C 48-pin TPA3100D2 | |
Contextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Feature summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9V (1.8V typical in |
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M65KA512AB 512Mbit 133MHz 512Mbit 133MHz | |
LMV821DCKR
Abstract: LMV821DCKT LMV822 LMV822D LMV824 LMV821 LMV821DBVR LMV821DBVT
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LMV821 LMV822 LMV824 LMV821. LMV822. LMV824. LMV821DCKR LMV821DCKT LMV822D LMV821DBVR LMV821DBVT | |
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Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR D DESCRIPTION DATE REVISED PER ECO-13-002771 DWN APVD KH 22FEB2013 RP 7 5 X Y FINISHED HOLE SIZE AND PLATED THRU HOLES |
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ECO-13-002771 22FEB2013 GR-1217-CORE 31JAN2006 27AUG2007 | |
104 Ceramic Disc Capacitors
Abstract: HDU10
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11-Mar-11 104 Ceramic Disc Capacitors HDU10 | |
TLC555
Abstract: TLC555MFKB TLC555MJG TLC555MJGB TLC555Q 5962-8950301 of monostable timer NE555 tlc555id
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TLC555 SLFS043F TLC555 NE555. TLC555MFKB TLC555MJG TLC555MJGB TLC555Q 5962-8950301 of monostable timer NE555 tlc555id | |
M65KG512ABContextual Info: M65KG512AB 512Mbit 4 banks x 8 Mb x 16 1.8 V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332 Mbit/s max. for 6ns speed |
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M65KG512AB 512Mbit 512Mbit M65KG512AB | |
SBOS313B
Abstract: LOG112 OPA132 OPA2381 OPA300 OPA335 OPA350 OPA354 OPA355 OPA380
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OPA381 OPA2381 SBOS313B 18MHz 250kHz OPA381 18MHz 10nV/Hz LOG112 OPA132 OPA2381 OPA300 OPA335 OPA350 OPA354 OPA355 OPA380 | |
LMV931
Abstract: LMV931IDBVR LMV931IDBVT LMV931IDCKR LMV931IDCKT LMV932 LMV932IDGKR LMV934
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LMV931 LMV932 LMV934 SLOS441G LMV931 OT-23-5) SC-70) LMV931: OT-23 SC-70 LMV931IDBVR LMV931IDBVT LMV931IDCKR LMV931IDCKT LMV932IDGKR | |
Contextual Info: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using |
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STD60NF55LA | |
Contextual Info: ST7LNB1Y0 DiSEqC slave microcontroller for SaTCR based LNBs and switchers Features • Clock, reset and supply management – Reduced power consumption – Safe power on/off management by low voltage detector LVD – Internal 8 MHz oscillator ■ Communication interface |
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A115-A
Abstract: LMV341 LMV341IDBVR LMV342 LMV344
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LMV341, LMV342, LMV344 000-V A114-A) A115-A) SLOS447G LMV341 OT-23) SC-70) A115-A LMV341 LMV341IDBVR LMV342 LMV344 | |
HDU10
Abstract: HCU1 HBU15
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 HDU10 HCU1 HBU15 |