31JUL04 Search Results

ARLON-GX-0300-55-22

Abstract: Motorola MRF183 MRF183R1 MRF183S MRF183SR1
Contextual Info: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA MRF183R1 MRF183SR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

c19a

Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Contextual Info: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

MRF6522-5

Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
Contextual Info: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The

Contextual Info: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF186

Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

MRF186

Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power MRF182 Field Effect Transistors MRF182S, R1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

Contextual Info: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

z14b

Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

OF4455

Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

MRF184

Abstract: MRF184R1 MRF184SR1
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

thermistor r5t

Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Contextual Info: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

j608

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network GSM base stations. The package offers the

RO3010

Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

Vj3640Y

Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

SMD W2A

Abstract: ntc 50-20 varistor W1A smd code SMD W1A SMD W2A 56 W2A smd smd code W2F smd marking code w1a for all smd components W2F AVX HQ
Contextual Info: TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors GENERAL DESCRIPTION The AVX TransGuard® Transient Voltage Suppressors TVS with unique high-energy multilayer construction represents state-of-the-art overvoltage circuit protection. Monolithic

MRF185

Abstract: transistor motorola 246
Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line LAST SHIP 31JAN05 MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode

MRF184

Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184S MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

IRL 724

Abstract: IRL 724 N motorola MOSFET 935 MRF183 MRF183S MRF183SR1
Contextual Info: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices