3205 FET Search Results

KD510

Abstract: 2SK319 2SK320
Contextual Info: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.

Contextual Info: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

FET 3205

Abstract: 3205 FET D1210UK
Contextual Info: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

3205 FET

Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

D1210UK

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

transistor 3205 equivalent

Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Contextual Info: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar

2SK1255

Abstract: 2SK125
Contextual Info: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n

S7190A

Abstract: SI 3205
Contextual Info: S-7190A 64-bit THERMAL HEAD DRIVER The S-7190A is a thermal print head driver, consisting of a CMOS 64-bit shift reg iste r with s e ria l input and serial/parallel output, a C M O S 64-bit latch and 64 Nch opendrain drivers. It directly drives a thin film or a thick

TO-243AA

Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

DIODE S4 08

Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with

VN3205

Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

VN3205N6

Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination

Contextual Info: Ceramic Resonators Leaded EFO-EN/GN Features • Wide range of oscillation frequency: 3.58 to 35 MHz. • High accuracy, high stability • Initial frequency tolerance: ±0.5 % • Saves height on P.C.-board Height: 5 mm max. • Taped version is available for automatic insertion.

marking 3A sot-89

Abstract: 3V02 SIVN3205 VN3205
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

2n4405

Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous

LA 3660

Abstract: 32-bit shift register DST1
Contextual Info: S-7180A 32-bit THERMAL HEAD DRIVER The S-7180A is a thermal print head driver, consisting of a CMOS 32-bit shift re g iste r with s e ria l input and serial/parallel output, a C M O S 32-bit latch and 32 Nch opendrain drivers. It directly drives a thin film or a thick

transistor b764

Abstract: c2314 transistor transistor b985 transistor D1207 B892 transistor b892 c2314 D1111 TRANSISTOR C3117 TRANSISTOR d879 transistor
Contextual Info: SA ßfO PCP Power Chip Pack Transistor Series C a F" & a t u i - s * V e r y sm all s i z e making i t p o s s i b l e to p ro v id e h ig h - d e n s ity , s m a lI - s i z e d h y b rid lCs. * V a r io u s p a c k in g of d e v ic e s a r e a v a i la b l e to meet a u to m atic

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Contextual Info: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and

M3202

Abstract: M3221 M3206 H3205 L3231 M3233 M3243 H3202 H3206 m3201
Contextual Info: FULL SIZE D.I.L. M3201 thru M3207 L3201 thru L3207 M3221 thru M3223 L3221 thru L3223 M3231 thru M3233 L3231 thru L3233 M3241 thru M3243 L3241 thru L3243 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C HALF SIZE D.I.L. H3201 H3221 H3231 H3241 Tristate VCXOs

M3202

Abstract: M3201 M3221 M3207 M3243 M3206 H330-2 M3203 M3223 M3241
Contextual Info: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS HCMOS/TTL 5V Thru-Hole / Gull Wing FEATURES • Guaranteed Capture Range of ±50 ppm • Excellent incrememtal and best-straight-line linearity • Start-up time is less than 5ms • Each unit is ATE-tested to guarantee full compliance with all electrical specifications

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

Contextual Info: Der Weltweit Führende Experte für Halbleiter-Schalttechnologie Halbleiter-Antriebssteuerung Crydom ist die weltweit führende Marke für Halbleiter-Schalttechnologie. Traditionell erfolgte die Steuerung in Anwendungen für Halbleiterrelais und Halbleiter-Schaltschütze primär über induktive Lasten. In jüngster Zeit