320N20NS Search Results
320N20NS Price and Stock
Infineon Technologies AG BSC320N20NS3GATMA1MOSFET N-CH 200V 36A TDSON-8 |
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BSC320N20NS3GATMA1 | Digi-Reel | 7,422 | 1 |
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BSC320N20NS3GATMA1 | Reel | 5,000 | 16 Weeks | 5,000 |
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BSC320N20NS3GATMA1 | 3,277 |
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BSC320N20NS3GATMA1 | Reel | 5,000 | 5,000 |
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BSC320N20NS3GATMA1 | 26,608 | 1 |
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BSC320N20NS3GATMA1 | 50,000 | 17 Weeks | 5,000 |
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BSC320N20NS3GATMA1 | 35,000 | 1 |
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Infineon Technologies AG BSC320N20NS3 GMOSFETs N-Ch 200V 36A TDSON-8 OptiMOS 3 |
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BSC320N20NS3 G | 3,051 |
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Infineon Technologies AG BSC320N20NS3G |
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BSC320N20NS3G | 84 | 3 |
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320N20NS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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640VContextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant |
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BSC320N20NS3 IEC61249-2-21 320N20NS 640V | |
320n20ns
Abstract: BSC320N20NS3 G IEC61249-2-21 JESD22 BSC320N20NS3 d36 marking
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BSC320N20NS3 IEC61249-2-21 320N20NS 320n20ns BSC320N20NS3 G IEC61249-2-21 JESD22 d36 marking | |
Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant |
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BSC320N20NS3 IEC61249-2-21 320N20NS |