322 135 DIODE AMPLIFIER Search Results

Contextual Info: O K I electronic components OIP1Q1_ Digital Output Photodetector_ GENERAL DESCRIPTION The O IP IO I is a digital output photodetector that incorporates a photodiode, amplifier circuit, Schmitt-trigger circuit and a voltage regulator circuit on to a single chip. The O IP IO I allows

AU-1448

Abstract: 548 1334 diode
Contextual Info: MITEQ AU-1448 - AU-1480 AMPLIFIER FREQUENCY MHz 5–200 5–400 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1480 AU-1448 50 50 0.5 0.5 2.0:1 2.0:1 50/50 50/50 1.2 1.2 11

rectifier diode for max 1.5A

Abstract: 433B IRFF430 JANTX2N6802 JANTXV2N6802 9433B
Contextual Info: Provisional Data Sheet No. PD-9.433B HEXFET JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

9433B

Abstract: IRFF430 JANTX2N6802 JANTXV2N6802 433B rectifier diode for max 250v 1.5A
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.433B HEXFET JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International

JANTX2N6762

Abstract: IRF430 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
Contextual Info: Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance

IRF430

Abstract: JANTX2N6762 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s

Contextual Info: Jp j-0 rnational Provisional Data Sheet No. PD-9.336E I O R Rectifier JANTX2N6762 HEXFET POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N- CHA NNE L 500 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­

Contextual Info: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International

rfm 1207-5

Abstract: 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102
Contextual Info: Low Power Components Short Form Catalog l Introduction l Selection Guide by Frequency Application l Master Index Sorted by Frequency l Master Index Sorted by Lid Symbol l Typical Radio Types l Superhet Receiver Example l RO Series l RP Series l RF Series l

Contextual Info: International Provisional Data Sheet No. PD 9.1291 HëHRectifier IRFY4 3 0 CM HEXFET POWER MOSFET OD N -C H A N N E L Description Product Summary Characteristic H E X F E T ® te c h n o lo g y is th e key to In te rn a tio n a l Rectifier's advanced line of power M O SFET transistors.

Contextual Info: Provisional Data Sheet No. PD 9.809 International IG R Rectifier IRFI2 6 0 HEXFET TRANSISTOR N-CHANNEL Product Summary 200Volt, 0.060Q, HEXFET H E X F E T technology Is the key to International Rectifier’s advanced line of power M OSFET transis­ tors. The efficient geometry design achieves very

Contextual Info: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

IRFY430C

Abstract: IRFY430CM
Contextual Info: Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

IRFY430C

Abstract: IRFY430CM
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

DMS1-26A

Abstract: mdc 171 DMH2-22 MD 243 diode MD-525-4 MDS-222 MLLF-3 MD 202 MD-414 Adams-Russell
Contextual Info: INDEX PAGE 26 27 29 30 29 31 32 33 34 39 38 50 51 53 58 66 75 76 77 84 90 86 91 91 88 92 93 28 35 37 38 40 41 42 43 44 45 46 47 48 49 52 54 55 56 57 59 61 62 63 64 65 67 68 69 70 72 73 MODEL AM/AMC-184 AM/AMC-210 AM/AMC-211 AM/AMC-212 AM/AMC-250 AMS-117 AMS-162

sec 222M se

Abstract: RKM 24 sm transistor sire db 125 160F 2120R SENSORS TEMPERATURE Pt-100-DIN 43760 long rang TRANSMITTER Fm circuit calibration procedure altek thermocouple simulator 2600 t series pressure transmitter pyro sensor range 20m turbine flowmeter
Contextual Info: ALTEK Altek process calibrators are accurate, rugged, and easy to u s e . . perfect for control room, shop, or field. They save you time on startups and routine calibration, reduce downtime and increase productivity. Simply select, connect, and check. Each calibrator does a specific job. Check milliamp loops; simulate and measure

zener z1

Abstract: 12 volt zener diode 10 watts j718
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

IRF9530 mosfet circuit diagram

Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
Contextual Info: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary

hf class AB power amplifier mosfet

Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
Contextual Info: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary

d401a

Abstract: D302 d401b PIC18CXXX
Contextual Info: 32 Specifications Section 32. Electrical Specifications HIGHLIGHTS 32.1 32.2 32.3 32.4 32.5 32.6 32.7 32.8 32.9 32.10 32.11 32.12 32.13 32.14 32.15 32.16 32.17 32.18 32.19 32.20 32.21 32.22 32.23 32.24 32.25 32.26 32.27 32.28 32.29 Introduction . 32-2

D401A

Abstract: D401a datasheet D405 NR pp d115 PIC18CXXX ssp i2c d401b D403 A D403 transistor datasheet d405
Contextual Info: Section 32. Electrical Specifications HIGHLIGHTS Introduction . 32-2 Absolute Maximums. 32-3

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

amplifier circuit diagram

Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
Contextual Info: Index AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER