3235 DS HE NE Search Results

ic 4081 pin diagram

Contextual Info: ►UNDER DEVELOPMENT S-8423 Series BATTERY BACKUP IC The S-8423 Series is a CMOS 1C designed for use in th e sw itching circuits of m ain and backup m icrocom puters. po w e r su p p lie s of 3-V o p e ra tio n It consists of tw o voltage regulators, three voltage

71RA50

Abstract: CSR BC4 a10ra11r
Contextual Info: TOSHIBA THM72V4030BTG60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTHM 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC 51V16400BS T on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate

SS421L

Abstract: TA 2092 N
Contextual Info: LOW WHEN FREQUENCY IS GREATER THAN SET POINT A B S O L U T E M A X I MUM R A T I N G S . C i r c u i t f u n c t i o n is not g u a r a n t e OPTL 2X R.010 Z I / 2X 45 !_ . 1 4 4 ± . 002 xceeded, TPM 1.1 PARAMPTER AMB I E N T T E M P P R A T U R E MI N

Contextual Info: 64K X 18, 32K x 32/36 3.3V I/O, F L O W -T H R O U G H S Y N C B U R S T SRAM I^ IIC R D N MT58LC64K18B3, MT58LC32K32B3, MT58LC32K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • • • • •

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1 2Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Double-Cycle Deselect

KC102

Contextual Info: |v i i c : 64K X 18, 32K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM r o n MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •

Contextual Info: ADVANCE M I|— C 3nP vl I Mi — 128K x 18, 64K x 32/36 2. 5V I/O, FLOW -THROUGH SYN CBUR ST SRAM MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 SYNCBURST SRAM 3.3V Supply, 2.5V I/O, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • •

X3286

Contextual Info: ADVANCE 128K x 18, 6 4 K x 32/36 3.3V I/O. F L O W -T H R O U G H S Y N C B U R S T SR AM M IC R O N MT58LC128K18B3, MT58LC64K32B3, MT58LC64K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • •

Contextual Info: 128K X 18. 64K x 32/36 3.3V I/O, PIPELINED, SCD S Y N C B U R S T SR AM p ilC IR O IS J MT58LC128K18D8, MT58LC64K32D8, MT58LC64K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • •

Contextual Info: M O S E L V TTE U C PRELIMINARY V52C8258 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORM ANCE V 52C8258 60 70 80 Max. RAS Access Time, Irac 60 ns 70 ns 80 ns Max. CAS Access Time, (Icac) 15 ns 20 ns 25 ns Max. Column Address Access Time, (t^ )

Contextual Info: ADVANCE MICRON 256K x 18,128K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM • Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SRAM 3.3V Supply, Flow-Through and Burst FEATURES • • • • • • • • •

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •

Contextual Info: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply

Contextual Info: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

Contextual Info: APR 13 1993 # • NEWBRIDGE JANUARY 1993 C A 9 5 C 6 8 /1 8 /0 9 MICROSYSTEMS DES DATA CIPHERING PROCESSORS DCP Encrypts/Decrypts data using National Bureau of Standards Data Encryption Standard (DES) • High speed, pin and function com patible version

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times

Contextual Info: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

D75306GF

Abstract: d75p316 D75304GF D75308GF PD75316G D75312GF PD75X nec PC141 NEC microcontroller qfp-80 d75316
Contextual Info: . |\| E ¿/PD75316 Fam ily C jiP D75304/306/308/312/316/P308/P316A Single-Chip Microcontrollers With LCD Controller/Driver NEC Electronics Inc. June 1994 Description The juPD75316 fam ily of high-perform ance 4-bit single chip CMOS m icrocontrollers includes the follow ing

ge ds-38

Abstract: c1615 ftm 230 IHb si 51C259HL 51C259HL-15 51C259HL-20 C1608 C1609
Contextual Info: ll’M f-P M M Ä l i W ir r t e ! 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 15 0 70 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHM OS Standby Current (mA)

2TC6

Abstract: L710001
Contextual Info: Advance Information This document contains information on a product under development. Specifications are subject to change without notice. Distinguishing Features Arbitrary Scaling of Raster Bit Maps from 5% through 750% Scale Down Reduce and Scale Up (Enlarge) Capability

motorola 68000

Contextual Info: MOTOROLA • i SEMICONDUCTOR ■ TECHNICAL DATA MC68030 Technical Sum m ary SECOND-GENERATION 32-BIT ENHANCED MICROPROCESSOR The MC68030 is a 32-bit virtu al m em ory m icroprocessor that integrates the fu n c tio n a lity o f an MC68020 core w ith the added capabilities o f an on-chip