325MW Search Results

MARKING s1P

Abstract: FJX2222A
Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ci 74190

Abstract: 4LS192 ic 74190 L5192 ci 74192 T74192 74192 74192 ic ic 74192 CT54190
Contextual Info: CT54190/CT74190 C T 54 L SI 90 /C T 74 L S 190 C T R D IV 10 190 M l l t t + i & M H ÿ t o / t t t t - f t t t , * # 54/741 90 W 54/74LS190 4 , S fc C T 54190/CT74190 25MHz 325mW CT 54 L S 19 0 /CT74 L S 190 25MHz lOOmW 190 fftttM t tA W b i a s i m i < ld ) â « i w

Contextual Info: SDA24 ABSOLUTES MAXIMUM RATING at Tam^25°C unless otherwise stated * Steady-State Reverse Voltage 7V Continuous Forward Current 50mA(1 ) 170mA(2) Repetitive Peak Forward Current (3) 200mA(1 ) 1A(2) Continuous Total Power Dissipation (4) 325mW Operating Free-air Temperature Range

idt7132

Abstract: 71421
Contextual Info: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)

HBC10

Abstract: HI5714 HI5714EVAL
Contextual Info: HI5714 S E M I C O N D U C T O R 8-Bit, 75 MSPS A/D Converter January 1996 Features Description • 75 MSPS Sampling Rate The HI5714 is a high precision, monolithic, 8-bit, Analog-toDigital Converter fabricated in Harris’ advanced HBC10 BiCMOS process. • Low Power 325mW

IDT7132

Abstract: IDT7142
Contextual Info: HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.)

idt7132

Abstract: IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

Contextual Info: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 25/55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

2k x 8 Dual port

Abstract: IDT7132
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

Contextual Info: ELPAQ EMS512K8A 35 - 55ns A division of ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES * • • ■ High density SRAM module Organized as 524,288 x 8 Access time 35 - 55ns Low power consumption Standby: 15mW typ. Operating: 325mW(typ.) ■ ■ ■

MARKING s1P

Abstract: FJX2222A transistor s1p
Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

dt7132

Abstract: IDT7132 IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/55/100ns max. – Commercial: 20/25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

IDT71321

Abstract: IDT71421 1421S
Contextual Info: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)

IDT71V321

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

IC 7142

Abstract: 82C482
Contextual Info: i t IDT HIGH SPEED 2K x 8 DUAL PORT STATIC RAM F e a tu re s * * High-speed access * * - Military: 25/35/55/100ns max. - Commercial: 20/25/35/55/100ns (max.) * Low-power operation * - IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) - IDT7132/42LA Active: 325mW (typ.)

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: ELPAQ EMS256K8B 35 - 55ns A division of ELMO Semiconductor Corp. 2Mb CMOS STATIC SRAM FEATURES High density SRAM module Organized as 262,144 x 8 Access time 35 - 55ns Low power consumption Standby: 100pW typ. Operating: 325mW(typ.) Power supply voltage 5V±10%

IDT71V321

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: SPE ELPAQ D • TOODSf l O ^ 0000015 OTO ■ ELPfl ELPA 3 EMS256K8B ^ _ _ _ _ ^ 3^^5 5 n ^ 2Mb CMOS STATIC SRAM FEATURES ■ High density SRAM module ■ Organized as 262,144 x 8 ■ Access time 35 - 55ns ■ Low power consumption Standby: 100pW(typ. Operating: 325mW(typ.)

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: PRELIMINARY M T4C4M 4A1/B1 4 M EG X 4 DRAM v iic n o N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low pow'er, 3mW standby; 325mW active, typical (A l

Contextual Info: ADVANCE MT4C4M4D1 4 MEG X 4 DRAM M IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V ±10% • Low power, 5mW standby; 325mW active, typical

Contextual Info: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al