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    325MW Price and Stock

    Square D by Schneider Electric QMB325MW

    Fusible Switch, 3-Pole, 400A, 240V; Contact Configuration:3Pst; Fuse Size Held:Class H, Class K, Class R; No. Of Fuses:-; Contact Current Ac Max:400A; Contact Voltage Ac Max:240V; Switch Terminals:-; No. Of Poles:3 Pole Rohs Compliant: No |Square D By Schneider Electric QMB325MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark QMB325MW Bulk 1
    • 1 $7131.79
    • 10 $6590.14
    • 100 $6364.45
    • 1000 $6364.45
    • 10000 $6364.45
    		Buy Now

    TURCK Inc VIS 2-F653-2.5M-WS 5.3T

    Vbi |Turck VIS 2-F653-2.5M-WS 5.3T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark VIS 2-F653-2.5M-WS 5.3T Bulk 1
    • 1 $47.1
    • 10 $47.1
    • 100 $47.1
    • 1000 $47.1
    • 10000 $47.1
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    Nexperia 2N7002NXAKR

    MOSFETs 2N7002NXAK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002NXAKR Reel 7,650,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0152
    		Buy Now

    Nexperia NX7002AK,215

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI NX7002AK,215 Reel 5,067,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0138
    		Buy Now

    TT Electronics plc FP-8987-05-1002-G-125

    Resistor Networks & Arrays 10K OHM 2% 14PIN 8987 SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI FP-8987-05-1002-G-125 Tube 50 50
    • 1 -
    • 10 -
    • 100 $140.74
    • 1000 $137.98
    • 10000 $137.98
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    Find more 325MW price and stock on Findchips.com

    325MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING s1P

    Abstract: FJX2222A
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 75ner MARKING s1P FJX2222A

    idt7132

    Abstract: 71421
    Text: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)


    Original     		PDF IDT71321SA/LA IDT71421SA/LA 20/25/35/55ns IDT71321/IDT71421SA 325mW IDT71321/421LA IDT71321 16-ormore-bits IDT71421 idt7132 71421

    HBC10

    Abstract: HI5714 HI5714EVAL
    Text: HI5714 S E M I C O N D U C T O R 8-Bit, 75 MSPS A/D Converter January 1996 Features Description • 75 MSPS Sampling Rate The HI5714 is a high precision, monolithic, 8-bit, Analog-toDigital Converter fabricated in Harris’ advanced HBC10 BiCMOS process. • Low Power 325mW


    Original     		PDF HI5714 HI5714 HBC10 325mW) 43MHz 1-800-4-HARRIS HI5714EVAL

    IDT7132

    Abstract: IDT7142
    Text: HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.)


    Original     		PDF 20/25/35/55/100ns 25/35/55/100ns IDT7132/42SA 325mW IDT7132/42LA IDT7132SA/LA IDT7142SA/LA IDT7132 16-or-more IDT7142

    idt7132

    Abstract: IDT7142
    Text: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)


    Original     		PDF IDT7132SA/LA IDT7142SA/LA 20/25/35/55/100ns 25/35/55/100ns IDT7132/42SA 325mW IDT7132/42LA IDT7132 16-or-more IDT7142

    Untitled

    Abstract: No abstract text available
    Text: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 25/55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)


    Original     		PDF IDT71321SA/LA IDT71421SA/LA 20/25/35/55ns 25/55ns IDT71321/IDT71421SA 325mW IDT71321/421LA IDT71321 16-ormore-bits

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)


    Original     		PDF IDT71V321S/L IDT71V421S/L 25/35/55ns IDT71V321/IDT71V421S 325mW IDT71V321/V421L IDT71V321 16or-more-bits IDT71V421

    2k x 8 Dual port

    Abstract: IDT7132
    Text: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)


    Original     		PDF IDT7132SA/LA IDT7142SA/LA 20/25/35/55/100ns 25/35/55/100ns IDT7132/42SA 325mW IDT7132/42LA IDT7132 16-or-more 2k x 8 Dual port

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 75opment. MARKING s1P FJX2222A transistor s1p

    dt7132

    Abstract: IDT7132 IDT7142
    Text: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/55/100ns max. – Commercial: 20/25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)


    Original     		PDF IDT7132SA/LA IDT7142SA/LA 25/35/55/100ns 20/25/35/55/100ns IDT7132/42SA 325mW IDT7132/42LA IDT7132 16-ormore dt7132 IDT7142

    IDT71321

    Abstract: IDT71421 1421S
    Text: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)


    Original     		PDF IDT71321SA/LA IDT71421SA/LA 20/25/35/55ns IDT71321/IDT71421SA 325mW IDT71321/421LA IDT71321 16-ormore-bits IDT71421 IDT71421 1421S

    IDT71V321

    Abstract: No abstract text available
    Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)


    Original     		PDF IDT71V321S/L IDT71V421S/L 25/35/55ns IDT71V321/IDT71V421S 325mW IDT71V321/V421L IDT71V321 16or-more-bits IDT71V421

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)


    Original     		PDF IDT71V321S/L IDT71V421S/L 25/35/55ns IDT71V321/IDT71V421S 325mW IDT71V321/V421L IDT71V321 16or-more-bits IDT71V421

    IDT71V321

    Abstract: No abstract text available
    Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)


    Original     		PDF IDT71V321S/L IDT71V421S/L 25/35/55ns IDT71V321/IDT71V421S 325mW IDT71V321/V421L IDT71V321 16or-more-bits IDT71V421

    ci 74190

    Abstract: 4LS192 ic 74190 L5192 ci 74192 T74192 74192 74192 ic ic 74192 CT54190
    Text: CT54190/CT74190 C T 54 L SI 90 /C T 74 L S 190 C T R D IV 10 190 M l l t t + i & M H ÿ t o / t t t t - f t t t , * # 54/741 90 W 54/74LS190 4 , S fc C T 54190/CT74190 25MHz 325mW CT 54 L S 19 0 /CT74 L S 190 25MHz lOOmW 190 fftttM t tA W b i a s i m i < ld ) â « i w


    OCR Scan     		PDF CT54190/CT74190 CT54LS190/CT74LS190 54/74LS190 54190/CT74190 25MHz 325mW 193ft ci 74190 4LS192 ic 74190 L5192 ci 74192 T74192 74192 74192 ic ic 74192 CT54190

    Untitled

    Abstract: No abstract text available
    Text: SDA24 ABSOLUTES MAXIMUM RATING at Tam^25°C unless otherwise stated * Steady-State Reverse Voltage 7V Continuous Forward Current 50mA(1 ) 170mA(2) Repetitive Peak Forward Current (3) 200mA(1 ) 1A(2) Continuous Total Power Dissipation (4) 325mW Operating Free-air Temperature Range


    OCR Scan     		PDF SDA24 170mA 200mA 325mW

    Untitled

    Abstract: No abstract text available
    Text: ELPAQ EMS512K8A 35 - 55ns A division of ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES * • • ■ High density SRAM module Organized as 524,288 x 8 Access time 35 - 55ns Low power consumption Standby: 15mW typ. Operating: 325mW(typ.) ■ ■ ■


    OCR Scan     		PDF EMS512K8A 325mW 555QOOQOQ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DRAM 4 MEG X 4 DRAM 5.0V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3m W standby; 325mW active, typical Al


    OCR Scan     		PDF 325mW 048-cycle 096-cycle 24-Pin

    IC 7142

    Abstract: 82C482
    Text: i t IDT HIGH SPEED 2K x 8 DUAL PORT STATIC RAM F e a tu re s * * High-speed access * * - Military: 25/35/55/100ns max. - Commercial: 20/25/35/55/100ns (max.) * Low-power operation * - IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) - IDT7132/42LA Active: 325mW (typ.)


    OCR Scan     		PDF IDT7132SA/LA IDT7142SA/LA 25/35/55/100ns 20/25/35/55/100ns IDT7132/42SA 325mW IDT7132/42LA 48-pin 52-pin IC 7142 82C482

    Untitled

    Abstract: No abstract text available
    Text: ELPAQ EMS256K8B 35 - 55ns A division of ELMO Semiconductor Corp. 2Mb CMOS STATIC SRAM FEATURES High density SRAM module Organized as 262,144 x 8 Access time 35 - 55ns Low power consumption Standby: 100pW typ. Operating: 325mW(typ.) Power supply voltage 5V±10%


    OCR Scan     		PDF EMS256K8B 100pW 325mW

    Untitled

    Abstract: No abstract text available
    Text: SPE ELPAQ D • TOODSf l O ^ 0000015 OTO ■ ELPfl ELPA 3 EMS256K8B ^ _ _ _ _ ^ 3^^5 5 n ^ 2Mb CMOS STATIC SRAM FEATURES ■ High density SRAM module ■ Organized as 262,144 x 8 ■ Access time 35 - 55ns ■ Low power consumption Standby: 100pW(typ. Operating: 325mW(typ.)


    OCR Scan     		PDF EMS256K8B 100pW 325mW

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M T4C4M 4A1/B1 4 M EG X 4 DRAM v iic n o N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low pow'er, 3mW standby; 325mW active, typical (A l


    OCR Scan     		PDF 325mW 048-cycle 096-cycle 24-Pin A0-A11 S1993,

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4C4M4D1 4 MEG X 4 DRAM M IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V ±10% • Low power, 5mW standby; 325mW active, typical


    OCR Scan     		PDF 325mW 096-cycle 24-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al


    OCR Scan     		PDF 325mW 048-cycle 096-cycle 24-Pin A11/NC A0-A11; A0-A11