3270 TRANSISTOR Search Results

TSHA3400

Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Contextual Info: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538

Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

halo tgm-240ns

Abstract: TGM-250NS TGM-340 midcom 31160r HALO TGM-350 tgm-240ns TGM-250 TGM-240 CTX01-14659 TGM-240NS 6 pin
Contextual Info: 19-3270; Rev 0; 4/04 +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

TGM-240NS 6 pin

Abstract: TGM-250NS
Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

halo tgm-240ns

Abstract: TGM-240NS TGM-250 midcom 31160r TGM-240 CTX01-14659 TGM-250NS Cooper CTX01-14608 CTX01-14608 TGM-450
Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

B78304-A1477-A3

Abstract: TGM-240 CTX01 31160r
Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

pulse transformer driver ic

Abstract: tgm-240ns halo tgm-240ns B78304-A1477-A3 epcos rs485 HALO TGM-350 MV power transformers TGM-250 CTX01-14659 Cooper CTX01
Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor

3170R

Abstract: CA3170
Contextual Info: M OT OR OL A SC XSTRS/R F 12E D | G Gf lô S Sf l 3 | T-74'itf- MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA C A 3170 C A 3170R C A 3270 C A 3270R The RF Line 4 0 -C h an n e l 330 M H z C A T V In p u t/O u tp u t T ru n k A m p lifie rs . designed for broadband applications requiring low-distortion amplification. Specifi­

pnp Transistor TO92 5V 200mA

Abstract: ZTX755 ZTX776 DSA003775 3270 transistor
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 – JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JU LY 94 FEATU RES * 200 Volt VCE0 * 1 A m p continuous current * Ptot= 1 W a tt REFER TO Z TX 755 FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JULY 94 FEATURES * * 200 V olt VCE0 1 A m p continuous current * Ptot= 1 W att REFER TO ZTX755 FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT

K1461

Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
Contextual Info: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers

Contextual Info: 4bE D • b3b?2S4 MOTOROLA 00=12^5 SC 3 ■ X S TR S /R P I0T b T ^33- 7 F) MOTOROLA SEMICONDUCTOR tm m m tm m m m m m m b h TECHNICAL DATA Ükä DM0 2C3792HV Chip PNP Silicon Power Transistor iiif in Discrete . . .designed for m edium -speed switching and amplifier applications.

d686* transistor

Abstract: westcode igbt transistor 1GE
Contextual Info: WESTCODE Data Sheet Issue:- 1 IXYS Company
 

  An Date:- 2 Aug, 2005 Prospective data Insulated Bi-Polar Gate Transistor Type TX168NA17A Development Type Number Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

IRFF223

Abstract: IRFF222 IRFF220 IRFF221
Contextual Info: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m

MJ 5030

Abstract: westcode igbt
Contextual Info: Date:- 18 Jun, 2003 Data Sheet Issue:- 2 Provisional Data

  Insulated Gate Bi-Polar Transistor Type T0250NA52E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

D-68623

Abstract: T0240 westcode igbt
Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 3  WESTCODE Date:- 1 Dec, 2005 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0240NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.

transistor 600v 500a

Abstract: T0500NA25 D-68623 T0500 ic 90807
Contextual Info: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

T1500TA25E

Abstract: transistor polar D-68623 T1500
Contextual Info: Date:- 1 Dec, 2003 Prospective data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T1500TA25E MAXIMUM LIMITS UNITS Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 29 Jul, 2004 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0250NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.

IC500A

Abstract: t0800ta45e D-68623 T0800 transistor D 982
Contextual Info: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T1200EA45E

Abstract: transistor polar D-68623 T1200
Contextual Info: Date:- 21 Nov, 2005 Provisional Data  Data Sheet Issue:- 3 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T1200EA45E MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T2400GA45E

Abstract: MJ6000 T2400
Contextual Info: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data

  Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

D6025

Abstract: stud6025nl
Contextual Info: STU/D6025NL Green Product Feb 25,2006 Ver1.2 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mΩ) Super high dense cell design for low RDS(ON). Typ Rugged and reliable.