32768 Search Results

tms jl 27C256-15

Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
Contextual Info: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS

TC8250P

Contextual Info: REAL TIME CLOCK TC8250P/AP Real Time Clock 1. INTRODUCTION The TC8250P or TC8250AP is a single chip C-MOS LSI for real time clock, which is composed as a peripheral LSI of a microcomputer. V The RTC has a 32768Hz X'tal oscillation circuit, counter group for clocking, control circuit for

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

HN27C256AFP-12T

Abstract: HN27C256AFP-15T HN27C256AP-12 HN27C256AP-15
Contextual Info: HN27C256AP/AFP Series 32768-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C256AP/AFP is a 32768-word by 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C256AP/AFP are in the “1” State Output High . Data is introduced by

1822-HEX

Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Contextual Info: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with

L-10W

Contextual Info: Ordering number : ENÍK4663 Asynchronous Silicon Gate CMOS LSI no* 4663 SAXYO 11_ LC36256AL, AML-70W/85W/10W/12W li 256 K 32768 words x 8 bits SRAM Preliminary Overview Package Dimensions The LC36256AL, AML-70W/85W/10W/12W are fully asynchronous silicon gate CMOS static RAMs with an

TT104

Contextual Info: - i I O rdering n u m b e r:EN 3929A SANYO SEMICONDUCTOR CORP S3E D N0.3929A TTTTDTb OQlOlll blS M T S A J LC36257P, PL, PM, PML CMOS LSI SA\YO 256 Kbit 32768 x 8 CMOS Static RAM i PINOUT OVERVIEW LC36257P series devices are silicon-gate, CMOS static RAMs configured as 32 768 x 8 bits. They incorporate

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH46ANG 2010 TOSHIBA CORPORATION All Rights Reserved TMP86FH46ANG Difference among product TMP86xx46 Series 86C846 86CH46 86CM46 86CH46A 86CM46A 86PM46 86PH46 ROM 8192bytes (MASK) 16384bytes (MASK) 32768bytes

4430B

Abstract: 256x128x8
Contextual Info: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

PDIP24

Abstract: PDIP32 U631H256 U631HM1024 SOP44
Contextual Info: U631HM1024 Advanced Information SoftStore 128K x 8 nvSRAM Description Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM Module 4 x 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Times Software STORE Initiation

SN74V273

Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: HN27256P Series 32768-word x 8-bit One Time Electrically Programmable ROM The HN27256P is a 32768-word by 8-bit one time electrically pro­ grammable ROM. Initially, all bits of the HN27256P are In the " 1 " state Output High . Data is introduced by selectively programming

hm62256

Contextual Info: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

aml 10 series

Abstract: LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 LC36256AL-85 LC36256AML-10 LC36256AML-12 LC36256AML-70 LC36256AML-85
Contextual Info: SANYO SEMICONDUCTOR CORP b3E J> m 7^7Q 7^ DD12347 417 « T S A J Ordering number : E N 4153 Asynchronous Silicon Gate CMOS LSI iSAXYO LC36256AL, AM L-70/85/10/12 256 K 32768 w ords x 8 bits SRAM Overview Package Dimensions T he L C 3 6 2 5 6 A L , A M L -7 0 /8 5 /1 0 /1 2 are fully

ST3215SB32768H5HPWAA

Abstract: ST3215SB32768E0HPWBB ST3215SB ST3215SB32768H5 ST3215SB32768C0HPWBB st3215sb32768 ST3215
Contextual Info: Crystal Units Surface Mount Type: Tuning Fork ST3215SB 3.2x1.5mm for Consumer/ Mobile Equipment Features How to Order ST3215SB 32768 □□ □ □ □ □□ • Small, Low Profile • Ceramic Package • Pb Free • Reflow Compatible ① ② ③ ④⑤⑥ ⑦

GPL133A

Abstract: GPLD112 GPLD801 GPLD802
Contextual Info: GPL133A Confirmation Sheet V1.2 11/24/2005 Customer Date Project title Code No. Project description Working voltage LCD Matrix 32768Hz OSC Components □2.4V ~ 3.6V 2-battery □3.6V ~ 5.5V (3-battery) CPU Frequency: _MHz ROSC Frequency: _MHz

A1601

Abstract: "special memory address" GPL161001 A1600 GPL161001A S200 S240
Contextual Info: GPL161001A Confirmation Sheet V1.2 Customer Date Project Title Code No. 12/19/2007 Project Description CPU Working Voltage VDD □2.7V ~ 3.6V CPU Operation Frequency □2.7V ~ 3.6V I/O Voltage Crystal (32768Hz) □Check Clock control register: _ (Value written to 0x7007),

303F

Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle

Contextual Info: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

UM3262

Abstract: UM3262-1 UM3262-2 UM3262-2H UM3262H UM3272 UM3272-1 UM3272-2 umc ha
Contextual Info: UNITED M I C R O EL EC TR ONI CS ObE D | TBSSflia □ □ □ □ 7 C] 3 7 | T - l/9'/5-o z UM C UM3262 • 3272 SERIES ANALOG ALARM CLOCK CIRCUITS • C-MOS integrated circuit for battery-operated, quartz crystal clocks ■ Precision 32768 Hz quartz crystal controlled oscillator

AO117

Abstract: 1DM6 LC33832M LC33832P LC33832S LC33832
Contextual Info: Ordering number : EN4430B CMOS LSI _ LC33832P, S, M, PL, SL, ML-70/80/10 SA\YO 256 K 32768 words x 8 bits Pseudo-SRAM ''X Overview Package Dimensions The LC33832 scries is com posed o f pseudo static RAM that o p e ra te s on a s in g le 5 V p o w e r su p p ly an d is

DIP28

Abstract: LC33832M LC33832P LC33832S
Contextual Info: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory