32MBI Search Results

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11414-1E 32Mbit Mobile FCRAM 1.8V, Fast Page Mode MB82DPS02183B-80/-80L/-85/-85L New released • FEATURES • • Asynchronous SRAM interface 8 Words Page Address Access Capability _ • • • • • •

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

VOICE RECORDER IC

Abstract: VOICE RECORDER IC programming MN48V32080F
Contextual Info: Panasonic AV Flash memory MN48V32080F • Overview AV Flash memory is a 32Mbit(4block x 1,985 sector x 18page x 28byte configuration) serial Flash memory with single 3.3V power supply. The AV Flash memory is a full serial I/O type memory transferring addresses,

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

edo dram 50ns 72-pin simm

Abstract: UG232W3264HSG
Contextual Info: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO

Contextual Info: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16

Contextual Info: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

Contextual Info: V59C1512 404/804/164 QD*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 19A DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns

Contextual Info: V59C1512 404/804/164 QC HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

DMX RECEIVER

Abstract: HYB39 HYB39D32322TQ LQFP100 infineon sgram SGRAM
Contextual Info: Memories for Graphics Systems 32Mbit DDR SGRAM HYB39D32322TQ -6 -A2 Die revision A2 User’s Manual Version 2.12 06.2000 Edition 06.2000 This edition was realized using the software system FrameMaker. Published by Infineon Technologies, Marketing-Kommunikation,

Contextual Info: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

V58C2512

Contextual Info: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: IS66WVE2M16BLL Advanced Information 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

ws-011

Abstract: ac servo controller schematic L6000 PQFP64 TQFP64 cap 0651 57
Contextual Info: L6000 SINGLE CHIP READ & WRITE CHANNEL ADVANCE DATA SUPPORTS 9-32Mbit/s DATA RATE OPERATION IN RLL [1,7] CONSTRAINT - Data Rate is Programmable SUPPORTS ZONED BIT RECORDING APPLICATIONS LOW POWER OPERATION 500mW TYPICAL @ 5V @ 32Mbits/Sec PROVIDES PROGRAMMABILITY THROUGH

ba60

Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
Contextual Info: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable

A0-A21

Abstract: hanbit non-volatile ram
Contextual Info: HANBit HMN4M8DV N Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V Part No. HMN4M8DV(N) GENERAL DESCRIPTION The HMN4M8DV Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited write

MX23L3254MC-20G

Abstract: 8096 microcontroller features MX23L3254 MX23L3254MC-20 MX23L3254MI-20G ST10
Contextual Info: MX23L3254 32M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L3254 is a 32Mbit 4M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 32Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage

puma

Contextual Info: 1M x 32 SRAM MODULE PUMA 84SV32000 - 70/85/10 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 191 2930500. FAX +44 191 2590997 Issue 1.1 : January 1999 Description Features The PUMA 84SV32000 is a 32Mbit CMOS Low Voltage

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide