32N50Q Search Results

125OC

Abstract: 32N50Q
Contextual Info: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

32N50Q

Abstract: 125OC
Contextual Info: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A

IXFR32N50

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

IXFR32N50

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

Contextual Info: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions

fast IXFX

Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

30N50

Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions

32N50Q

Abstract: 4925 B transistor 125OC 30n50 728B1
Contextual Info: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 32N50Q VDSS ID25 = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR

Contextual Info: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,

Contextual Info: □IXYS HIPerFET“ IXFJ 32N50Q V DSS Power MOSFETs 500 V 32 A ^D cont D DS(on) Q-Class N-Channel Enhancement Mode Avalanche Rated Highdv/dt, Lowtrr, HDMOS Family trr < 0.15 Q 250 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions vv DSS

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 32N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V ID cont = 32 A RDS(on) = 0.15 W t rr < 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXYS DS 145

Abstract: IXYS DS 145 - 16A diode
Contextual Info: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

32N50Q

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class VDSS ID25 RDS on IXFH 32N50Q IXFT 32N50Q trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

32N50Q

Abstract: 30N50Q 125OC 30n50
Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient

125OC

Abstract: 32N50Q
Contextual Info: IXFR 32N50Q VDSS ID25 HiPerFETTM Power MOSFETs ISOPLUS247TM = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR

Contextual Info: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A

Contextual Info: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFR32N50

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions

32N50Q

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFK 32N50Q IXFX 32N50Q VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

32N50Q

Abstract: BTAA
Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C,