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    7M4003S30CHB Renesas Electronics Corporation 32KX32 CERAMIC HIP MODULE Visit Renesas Electronics Corporation
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    Force Technologies Ltd FTE32KX32XP-90I

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    32KX32 Datasheets Context Search

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    MoSys

    Abstract: CL018G tsmc 0.18um MoSys sram embedded BWEB M1T1HT18PZ32E C-l018 32K32 MoSys 1T sram
    Text: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT18PZ32E 32-Bit CL018G 2300um 32Kx32 1650um M1T1HT18PZ32E MoSys tsmc 0.18um MoSys sram embedded BWEB C-l018 32K32 MoSys 1T sram

    Untitled

    Abstract: No abstract text available
    Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection


    Original     		PDF WE32K32-XXX 32Kx32 150ns MIL-STD-883 66-pin, 120ns 125ns

    Untitled

    Abstract: No abstract text available
    Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection


    Original     		PDF WE32K32-XXX 32Kx32 150ns MIL-STD-883 66-pin, 120ns 125ns MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: WE32K32-XXX 32Kx32 EEPROM MODULE ADVANCED* FEATURES • Access Times of 65, 80ns ■ Simple Byte and Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max • 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400 ■ Data and Toggle bit Polling for End of Write Detection


    Original     		PDF WE32K32-XXX 32Kx32 66-pin, 32Kx32; 64Kx16 128Kx8 WE32K32-XXX 32K32

    M1T1HT25FL32

    Abstract: CL025G
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT25FL32 32-Bit CL025G M1T1HT25FL32

    CL018G

    Abstract: M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FL32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT18FL32E 32-Bit CL018G M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters

    CL018G

    Abstract: M1T1LT18FL32E
    Text: Low Power Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1LT18FL32E • Low Power 1T-SRAM Standard Macro • 10-83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1LT18FL32E 32-Bit CL018G M1T1LT18FL32E

    tsmc 0.18um

    Abstract: CL018G M1T1HT18FE32E
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT18FE32E 32-Bit CL018G M1T1HT18FE32E tsmc 0.18um

    Untitled

    Abstract: No abstract text available
    Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 80*, 90, 120, 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection


    Original     		PDF WE32K32-XXX 32Kx32 150ns MIL-STD-883 66-pin,

    WE32K32-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES „ Access Times of 80*, 90, 120, 150ns „ Data Retention at 25°C, 10 Years „ MIL-STD-883 Compliant Devices Available „ Write Endurance, 10,000 Cycles Packaging: „ • 68 lead, Hermetic CQFP G2U , 122.4mm


    Original     		PDF WE32K32-XXX 32Kx32 150ns MIL-STD-883 32Kx32; 64Kx16 128Kx8 66-pin, 01HXX WE32K32-XXX

    32Kx32 Synchronous

    Abstract: KM732V589A-13 KM732V589A-15
    Text: PRELIMINARY KM732V589A/L 32Kx32 Synchronous SRAM 32K x 3 2 - Bit Synchronous Pipelined Burst S R A M FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.


    OCR Scan     		PDF KM732V589A/L 32Kx32 ifem42 71h4142 32Kx32 Synchronous KM732V589A-13 KM732V589A-15

    32Kx32 Synchronous

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.


    OCR Scan     		PDF KM732V599A/L 32Kx32 32Kx32 Synchronous

    U111B

    Abstract: KM732V588 KM732V588-13 KM732V588-15 KM732V588-17
    Text: KM732V588 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.


    OCR Scan     		PDF KM732V588 32Kx32 32-Bit 100-Pin 002171t U111B KM732V588 KM732V588-13 KM732V588-15 KM732V588-17

    Untitled

    Abstract: No abstract text available
    Text: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation


    OCR Scan     		PDF WE32K32-XXX 32Kx32 66-pin, 28Kx8 64Kx16 128Kx8 150ns 120ns 01HXX 02HXX

    Untitled

    Abstract: No abstract text available
    Text: KM732V595A/L 32Kx32 Synchronous SRAM Document Titie 32Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power, 2.5V I/O Datasheets for 100TQFP Revision History Rev. No. History Draft Data Remark R ev.0.0 Initial dra ft Feb. 18. 1997 P relim inary R e v.1.0 Final spe c release


    OCR Scan     		PDF KM732V595A/L 32Kx32 32Kx32-Bit 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high


    OCR Scan     		PDF KM732V596A/L 32Kx32 732V596A/L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM732V589/L 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • • • • The KM732V589/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high 2 Stage Pipelined operation with 4 Burst


    OCR Scan     		PDF KM732V589/L 32Kx32 32-Bit KM732V589/L 576-bit i486/Pentium 7Tb4142 0024D01

    Untitled

    Abstract: No abstract text available
    Text: KM732V599A/L 32Kx32 Synchronous SRAM Document Titie 32Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark R ev.0.0 Initial dra ft Feb. 18. 1997 P relim inary R e v.1.0 Final spe c release


    OCR Scan     		PDF KM732V599A/L 32Kx32 32Kx36-Bit 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: a WS32K32-XH1X M/HITE /MICROELECTRONICS 32Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 25, 35, 4 5 , 55, 7 0, 8 5 , 1 0 0 , 1 2 0 n s ■ C o m m e r c ia l, In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a nges ■ P a c k a g in g


    OCR Scan     		PDF WS32K32-XH1X 32Kx32 32KX32

    Untitled

    Abstract: No abstract text available
    Text: WS32K32N-XH1X WHITE /MICROELECTRONICS 32Kx32 SRAM MODULE FEATURES • A c c e ss T im e s of 25, 35, 45, 55, 70, 85, 1 0 0 , 120nS ■ C o m m e rcia l, In d u s tria l and M ilit a r y T e m p e ra tu re Ranges ■ 66 pin, PG A Typ e, 1.075 inch sq uare, H e rm e tic C eram ic


    OCR Scan     		PDF WS32K32N-XH1X 32Kx32 120nS 32KX32

    Untitled

    Abstract: No abstract text available
    Text: TT WS32K32-XHX M/HITE /M IC R O E LE C TR O N IC S 32Kx32 SRAM MODULE C om m ercial, Ind ustria l and M ilita r y T e m perature Ranges TTL C om patible Inputs and Outputs FEATURES 5 V o lt Pow er Supply • Access Times o f 25nS to 120nS Low P ow er CMOS


    OCR Scan     		PDF WS32K32-XHX 32Kx32 120nS 32Kx32; 64Kx16 128Kx8 WS32K32N-XHX O1/O16 I/O24 I/O31

    32KX32

    Abstract: No abstract text available
    Text: ^EDI EDI5C3232C 32Kx32 EEPROM ELECTRONIC DESIGNS, INC 32Kx32 CMOS EEPROM Multi-Chip Module Features 32Kx32 bit CMOS The EDI5C3232C is a high performance, one megabit Electrically Eraseable Programmable density EEPROM organized as 32Kx32 bits. The device Read Only Memory


    OCR Scan     		PDF EDI5C3232C 32Kx32 200ns EDI5C3232C four32Kx8EEPROMs

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F3232C 32Kx32 SRAM Module ELECTRONIC DESIGNS, INC 32Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3232C is a high speed megabit Static FiAM 32Kx32 bit CMOS Static module organized as 32Kx32. This module is constructed Random Access Memory


    OCR Scan     		PDF EDI8F3232C 32Kx32 EDI8F3232C 32Kx32. 32Kx8 EDI8F3232C25MZC EDI8F3232C25MZI.

    Untitled

    Abstract: No abstract text available
    Text: C2 WE32K32-XXX M/HITE /M IC R O E L E C T R O N IC S 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES EEPROM MODULES • Access Times of 9 0 ,1 2 0 ,150ns ■ Autom atic Page W rite Operation ■ MIL-STD-883 Compliant Devices Available ■ Page W rite Cycle Time: 10ms Max


    OCR Scan     		PDF WE32K32-XXX 32Kx32 150ns MIL-STD-883 66-pin, 400-------------------ORGANIZATION, 64Kx16 128Kx8 120ns