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    EDW1032BABG

    Abstract: GDDR5 Elpida GDDR5 EDW1032BABG-50-F GDDR5 pcb layout GDDR5 layout pre-charge EDW1032BABG-40-F E1597E11 170ball
    Text: PRELIMINARY DATA SHEET 1G bits GDDR5 SGRAM EDW1032BABG 32M words x 32 bits Specifications Features • Density: 1G bits • Organization — 2Mbit x 32 I/O x 16 banks — 4Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		PDF EDW1032BABG 170-ball M01E0706 E1597E11 EDW1032BABG GDDR5 Elpida GDDR5 EDW1032BABG-50-F GDDR5 pcb layout GDDR5 layout pre-charge EDW1032BABG-40-F E1597E11 170ball

    EDW1032BBBG

    Abstract: GDDR5 layout GDDR5 pcb layout POD-15 EDW1032BBBG-50-F Elpida GDDR5
    Text: DATA SHEET 1G bits GDDR5 SGRAM EDW1032BBBG 32M words x 32 bits Specifications Features • Density: 1G bits • Organization — 2Mbit x 32 I/O x 16 banks — 4Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		PDF EDW1032BBBG 170-ball M01E1007 E1771E10 EDW1032BBBG GDDR5 layout GDDR5 pcb layout POD-15 EDW1032BBBG-50-F Elpida GDDR5

    GDDR5

    Abstract: GDDR5 pcb layout Elpida GDDR5 POD-15 gddr5 controller EDW1032BBBG-40-F gddr5 x16 W1032 GDDR5 layout
    Text: DATA SHEET 1G bits GDDR5 SGRAM EDW1032BBBG 32M words x 32 bits Specifications Features • Density: 1G bits • Organization — 2Mbit x 32 I/O x 16 banks — 4Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		PDF EDW1032BBBG 170-ball M01E1007 E1771E11 GDDR5 GDDR5 pcb layout Elpida GDDR5 POD-15 gddr5 controller EDW1032BBBG-40-F gddr5 x16 W1032 GDDR5 layout

    EDW1032BABG

    Abstract: GDDR5 pcb layout Elpida GDDR5 EDW10 GDDR5
    Text: DATA SHEET 1G bits GDDR5 SGRAM EDW1032BABG 32M words x 32 bits Specifications Features • Density: 1G bits • Organization — 2Mbit x 32 I/O x 16 banks — 4Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		PDF EDW1032BABG 170-ball M01E0706 E1597E20 EDW1032BABG GDDR5 pcb layout Elpida GDDR5 EDW10 GDDR5

    k4B2G1646

    Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
    Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF

    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

    EDJ2116DASE

    Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
    Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    DDR2 x32

    Abstract: gddr3 GDDR3 SDRAM 256Mb GDDR4 hynix hy POD-15 POD18 sdram 2g
    Text: Last Updated: Dec. 2006 GRAPHICS MEMORY PART NUMBERING HY XX X XX XX X X X X X X - XX X TEMPERATURE HYNIX MEMORY Blank : Commercial 0℃~70℃ E : Extended (-25℃~85℃) I : Industrial (-40℃~85℃) PRODUCT FAMILY 5D 5P 5R 5F : : : : DDR SDRAM DDR2 SDRAM


    Original     		PDF Refresh/32ms Refresh/64ms 900MHz 800MHz 700MhZ 600MHz 550MHz 500MHz DDR2 x32 gddr3 GDDR3 SDRAM 256Mb GDDR4 hynix hy POD-15 POD18 sdram 2g

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    DA0ZR1

    Abstract: NFW22 Pr1363 FW04 PC87541v 88e8038 quanta IR 334 foxconn 14 pin JTAG CONNECTOR
    Text: 5 4 PCI-E 100MHz Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2010.01.09 20:49:27 +07'00' VGA 96MHz USB 48MHz D PCI 33MHz REF 14MHz Page : 2 3V_591 Page : 21 +3V_S5 1 GDDR2 Page : 27 PCIE Yonah / Merom GDDR2 NVIDIA G72M-V


    Original     		PDF 100/133MHz 100MHz 96MHz 48MHz 33MHz 14MHz ICS954310 CH7307 G72M-V 23X23 DA0ZR1 NFW22 Pr1363 FW04 PC87541v 88e8038 quanta IR 334 foxconn 14 pin JTAG CONNECTOR

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    GDDR5

    Abstract: Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15
    Text: USER’S MANUAL Introduction To GDDR5 SGRAM Document No. E1600E10 Ver. 1.0 Date Published March 2010 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 INTRODUCTION Intended Audience This manual is intended for users who design application systems using Graphics Double Data Rate 5 (GDDR5) Synchronous


    Original     		PDF E1600E10 M01E0706 GDDR5 Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15

    HY5PS121621BFP

    Abstract: HY5PS121621B HY5PS121621BFP-2
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 84Ball HY5PS121621BFP HY5PS121621B HY5PS121621BFP-2

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 450MHz/500MHz)

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 84Ball

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz HY5PS121621BFP 84Ball

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		PDF 300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV