MT8LSDT3264HG
Abstract: 0118-B 10EB2 0118B MT16LD464AG dram 72-pin simm 256mb simm 256mb
Text: Micron Memory DRAM Module Reference Guide Density 4MB 4MB 4MB 8MB 8MB 8MB 8MB 8MB 16MB 16MB 16MB 16MB 16MB 32MB 32MB 32MB 32MB 32MB 32MB 32MB 32MB 32MB 64MB 64MB 64MB 64MB 64MB 64MB 128MB 128MB 128MB 256MB 256MB Description SS 1 Meg x 32 Gold SIMM/Tin SIMM
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128MB
256MB
ODIM18
MT8VR12818AG
512MB
MT16VR25616AG
MT8LSDT3264HG
0118-B
10EB2
0118B
MT16LD464AG
dram 72-pin simm 256mb
simm 256mb
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G5640
Abstract: No abstract text available
Text: SU564043574NW3R October 26, 2006 Ordering Information Module Part Numbers Description SM564043574NW3R 4Mx64 32MB , SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 4Mx16 Based, PC133, CL 3.0, 25.40mm. SG564043574NW3R 4Mx64 (32MB), SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 4Mx16 Based,
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SU564043574NW3R
SM564043574NW3R
SG564043574NW3R
4Mx64
144-pin
4Mx16
PC133,
G5640
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Untitled
Abstract: No abstract text available
Text: SU532083574F0BP May 11, 2005 Ordering Information Part Numbers Description SM532083574F0BP 8Mx32 32MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100, CL 2.0 & 3.0, 25.40mm. SG532083574F0BP 8Mx32 (32MB), SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100,
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SU532083574F0BP
SM532083574F0BP
SG532083574F0BP
8Mx32
100-pin
8Mx16
PC100,
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512MB 8Mx32 DDR DRAM
Abstract: No abstract text available
Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,
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SU5320835D4F0CU
SM5320835D4F0CG
SB5320835D4F0CG
8Mx32
100-pin
8Mx16
DDR266A,
512MB 8Mx32 DDR DRAM
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VALUERAM0047-001
Abstract: No abstract text available
Text: Memory Module Specification KVR8X32-60ET/32 72-Pin SIMM EDO Memory Module DESCRIPTION: This document describes ValueRAM's 8M x 32-bit 32MB EDO (Extended Data Output) 72Pin SIMM (Single In-line Memory Module). The components on this module include sixteen
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KVR8X32-60ET/32
72-Pin
32-bit
72Pin
110ns
000ns
VALUERAM0047-001
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ND4700-BRG
Abstract: R4700 R4600 dma controller R4650
Text: HOME PRINT FIND NKK RISC Microprocessor RISC Chip-set PART NUMBER ND4700-BRG ND4700-MEC ND4650-PSC ND5000L DESCRIPTION R4400/R4600/R4700 PCI Bridge Chip with L2 Cache, Boot ROM and SIO Controller R4400/R4600/R4700 Memory Controller 64-bit Memory Bus max 32MB SIMM support
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ND4700-BRG
ND4700-MEC
ND4650-PSC
R4400/R4600/R4700
64-bit
R4600/R4650/R4700
R4600/R4650/R4700/R5000/R5650
ND5000L
R4700
R4600
dma controller
R4650
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29DL323S16SJ16-XX 16MB FLASH SIMM, based on AMD’s Am29DL323D SIMULTANEOUS READ/WRITE DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29DL323S16SJ16-XX is a 3.0V concurrent operation flash memory SIMM, composed of four 32Mb wide boot sector flash memories, each
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AVEF29DL323S16SJ16-XX
Am29DL323D
AVEF29DL323S16SJ16-XX
16bit,
80-pin,
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l0832
Abstract: simm 72 pin edo simm EDO 72pin "32mb x 36" simm edo
Text: LEGEND L0832E3A-2LCHA16C 8x32 60ns 72-pin EDO SIMM Performance Technology L0832E3A-2LCHA16C 8x32 60ns 72-pin SIMM FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module SIMM • 32MB (8 Meg x 32) • High-performance CMOS silicon-gate process
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L0832E3A-2LCHA16C
72-pin
L0832E3A-2LCHA16C
72-pin,
048-cycle
104ns
l0832
simm 72 pin edo
simm EDO 72pin
"32mb x 36" simm edo
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simm EDO 72pin
Abstract: No abstract text available
Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
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72PIN
TS8MED3260
TS8MED3260
32-bit
simm EDO 72pin
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U1-U12
Abstract: U9-U12 MT12D436 MT24D836 U17-U24
Text: OBSOLETE 4, 8 MEG x 36 PARITY DRAM SIMMs MT12D436 MT24D836 DRAM MODULE FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module SIMM • 16MB (4 Meg x 36) and 32MB (8 Meg x 36) parity versions • High-performance CMOS silicon-gate process
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MT12D436
MT24D836
72-pin,
048-cycle
72-Pin
U1-U12
U9-U12
MT12D436
MT24D836
U17-U24
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Untitled
Abstract: No abstract text available
Text: SG516163FG8NWUU May 31, 2006 Ordering Information Part Numbers Description Module Speed SG516163FG8NWDB 16Mx16 32MB , DDR2, 144-pin SO-DIMM, Unbuffered, Non-ECC, 16Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG516163FG8NWUU
SG516163FG8NWDB
16Mx16
144-pin
16Mx16
DDR2-400-333,
PC2-3200
SG516163FG8NWDG
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M5M417405CJ6
Abstract: GM71C17403CJ-6
Text: 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT TS8MED3260G Description Features The TS8MED3260G is a 8M by 32-bit dynamic RAM • Fast Page Mode with Extended Data Out module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
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72-PIN
16Mx8
TS8MED3260G
TS8MED3260G
32-bit
GM71C17403CJ-60
M5M417405CJ-6
NT5117405BJ-60
HM5117405S-6
M5M417405CJ6
GM71C17403CJ-6
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GM71C17403CJ6
Abstract: M5M417405CJ-6 HM5117405S-6 HM5117405S6 GM71C17403CJ-6 M5M417405CJ6 M5M417405CJ Transcend circuit diagram GM71C17403 72-PIN
Text: 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT TS8MED3260G Description Features The TS8MED3260G is a 8M by 32-bit dynamic RAM • Fast Page Mode with Extended Data Out module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
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72-PIN
16Mx8
TS8MED3260G
TS8MED3260G
32-bit
GM71C17403CJ-60
M5M417405CJ-6
NT5117405BJ-60
HM5117405S-6
GM71C17403CJ6
M5M417405CJ-6
HM5117405S-6
HM5117405S6
GM71C17403CJ-6
M5M417405CJ6
M5M417405CJ
Transcend circuit diagram
GM71C17403
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123401
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate
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AVEF29LV065U32SJ08-XX
Am29LV065D
AVEF29LV065U32SJ08-XX
64Mbit
80-pin
120ns
123401
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MA3640J00MCSG60
Abstract: MA3640J00MCSN60 MA3640J00TCSG60 MA3640J00TCSN60 MA3640J00TDSG60 MA3640J00TDSN60 MA364CJ00TBSN60 motorola dram 8M FPM RAM Drawing
Text: Order this document by 5VFPMU36SQ/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4, 8M x 36 DRAM Single-In-Line Memory Module SIMM 5 V, FPM, Unbuffered DRAWING 1 4M x 36 (16MB), 8M x 36 (32MB) 72–LEAD SIMM, CASE 866–02 • JEDEC–Standard 72–Lead Single–In–Line Memory
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5VFPMU36SQ/D
16MB/32MB:
MA3640J00TCSN60
MA3640J00TCSG60
MA3640J00MCSN60
MA3640J00MCSG60
MA3640J00TDSG60
MA3640J00TDSof
5VFPMU36SQ
MA3640J00MCSG60
MA3640J00MCSN60
MA3640J00TCSG60
MA3640J00TCSN60
MA3640J00TDSG60
MA3640J00TDSN60
MA364CJ00TBSN60
motorola dram 8M
FPM RAM Drawing
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Untitled
Abstract: No abstract text available
Text: 32MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS8M3260 Description Features The TS8M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 16 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.
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TS8M3260
TS8M3260
32-bit
TS8M3260
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hosiden DC motor 12V
Abstract: debug codes FD-04HG-2600 samsung lcd monitor circuit diagram lt121s1 lt121s1-153 teac fd samsung crt tv block diagram SAMSUNG LT121S1 Toshiba color tv lcd Circuit Diagram schematics HOSIDEN MOTOR
Text: Model 6200A Service Manual The circuit schematics herein provided for reference only are not necessarily the latest version. Mainboard D/D 3.3V CPU Power 2.2V2.45V/2.8V CPU Power Charger & Switch Board LCD Bar 1Mx16 8/16MB Memory 4Mx4 32MB Memory 4Mx4 40MB Memory
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1Mx16
8/16MB
77-62000-D07C
77-6200C-D03
77-620A5-D10
77-620A5-D50-A
77-6200S-D13
77-62006-D02
77-6202T-D71
77-2205T-060
hosiden DC motor 12V
debug codes
FD-04HG-2600
samsung lcd monitor circuit diagram lt121s1
lt121s1-153
teac fd
samsung crt tv block diagram
SAMSUNG LT121S1
Toshiba color tv lcd Circuit Diagram schematics
HOSIDEN MOTOR
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Am29DL323CB
Abstract: am29dl323cb-90ei flash 80-pin am29dl323cb90ei
Text: Advanced† SL29321A-90 T/G 9(V/R/S) 8M X 32 Bits (32MB) Simultaneous Operation Flash 80-Pin SIMM (3.3V Only) FEATURES GENERAL DESCRIPTION • • • • • • • • • Max. access time of 90ns; CE access time of 90ns; OE access time of 40ns TTL compatible inputs and outputs
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SL29321A-90
80-Pin
Am29DL323CB-90EI
DQ8-DQ15
DQ24-DQ31
Am29DL323CB
flash 80-pin
am29dl323cb90ei
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Flash SIMM 80
Abstract: 80 pin simm flash 30 pin simm memory 80pin simm
Text: ADVANCE 2MB-32MB FLASH SIMM MICRON I QUANTUM DEVICES, INC. 80-PIN FLASH SIMM FLASH MODULE FEATURES • JEDEC- and industry-standard pinout in an 80-pin single in-line memory module SIMM • 2MB (512K x 32), 4MB (1 Meg x 32), 8MB (2 Meg x 32), 16MB (4 Meg x 32), 32MB (8 Meg x 32)
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2MB-32MB
80-PIN
Flash SIMM 80
80 pin simm flash
30 pin simm memory
80pin simm
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80 pin simm flash 32mb
Abstract: No abstract text available
Text: ADVANCE 2MB-32MB FLASH SIMM |V|IC=RON 80-PIN FLASH SIMM FLASH MODULE • JEDEC- and industry-standard pinout in an 80-pin single in-line memory module SIMM • 2MB (512K x 32), 4MB (1 Meg x 32), 8MB (2 Meg x 32), 16MB (4 Meg x 32), 32MB (8 Meg x 32) • Address access times:
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2MB-32MB
80-PIN
80-pin
48-PIN
Q020bfl2
80 pin simm flash 32mb
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sm5801
Abstract: 64mb edo dram simm 16mb simm module dram 72-pin simm 128mb dram "32mb x 32" simm
Text: SMRTD005 SMART Modular Technologies QUICK REFERENCE GUIDE: SDRAM DIMM MODULES DENSITY ORG. BASE DRAMs ERROR CORRECTION PART NUMBER* 1 4 4 P IN , UNBUFFERED, SERIA L PRESENCE DETECT, 3 .3 V S O D IM M s CO CO 16MB 16MB 32MB 32MB lM x 64 2 M x 64 2 M x 64 4M X 64
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SMRTD005
564013174NWUU
SM564023174NWUU
SM564028074NWUU
SM564048074NWUU
SM564044074NWUU
SM572028074DWUU
SM572048074DWUU
SM572044074DWUU
SM572028074EWUU
sm5801
64mb edo dram simm
16mb simm module
dram 72-pin simm 128mb
dram "32mb x 32" simm
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GENERATOR ELECTRIC RAS TL 950 DC
Abstract: FPM RAM
Text: Order this document by 5VFPMU40S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4, 8M X 40 5 V, FPM, Unbuffered DRAM Single-In-Line Memory Module SIMM 4M x 40 (16MB), 8M x 40 (32MB) 72-LEAD SIMM CASE 866-02 for Error Correction Applications 16 and 32 Megabyte •
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5VFPMU40S/D
72-Lead
40C400SH60
40C400SHG
40C800SH60
40C800SHG
40C400SH70
40C800SH70
GENERATOR ELECTRIC RAS TL 950 DC
FPM RAM
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Untitled
Abstract: No abstract text available
Text: MICRON I 4’ 8M E Gx36 ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC. MT9D436X MT18D836 X DRAM MODULE FEATURES PIN ASSIGNMENT Front View • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) • 16MB (4 Meg x 36) and 32MB (8 Meg x 36)
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MT9D436X
MT18D836
72-pin,
048-cycle
72-Pin
DD-12)
DD-13)
DD-13
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Untitled
Abstract: No abstract text available
Text: |U |IC R O N 4’ 8 MEGx 36 ECC-OPTIMIZED DRAM SIMMs MT9D436 MT18D836 DRAM MODULE FEATURES • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module SIMM • 16MB (4 Meg x 36) and 32MB (8 Meg x 36) • High-performance CMOS silicon-gate process
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MT9D436
MT18D836
72-pin,
048-cycle
72-Pin
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