32MX16BIT Search Results

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 172PIN DDR2 400 Micro-DIMM 512MB With 32Mx16 CL3 TS512MPA0512U Description Placement The TS512MPA0512U is a 64M x 64bits DDR2-400 Micro-DIMM. The TS512MPA0512U consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

Contextual Info: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Placement Description The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

HY27USXX121M

Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
Contextual Info: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group

H5MS5162

Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
Contextual Info: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

HY27US08121

Contextual Info: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 JM335Q644A-6 Description Placement The JM335Q644A-6 is a 32M x 64bits DDR2-667 Unbuffered DIMM. The JM335Q644A-6 consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 256MB With 32Mx16 CL4 TS32MLQ64V5M Placement Description The TS32MLQ64V5M is a 32M x 64bits DDR2-533 Unbuffered DIMM. The TS32MLQ64V5M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

48USOP1

Abstract: HY27UF0812 HY27US08121 63FBGA HY27US HY27US0812 48pin-USOP1 hynix nand flash
Contextual Info: HY27US 08/16 12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mb NAND FLASH HY27US(08/16)12(1/2)B HY27US0812(1/2)B HY27US1612(1/2)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY27US08121A

Abstract: HY27 HY27US hynix nand spare area
Contextual Info: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary

Contextual Info: 240PIN DDR2 400 Unbuffered DIMM 256MB With 32Mx16 CL3 TS32MLQ64V4M Description The TS32MLQ64V4M is a 32M x 64bits DDR2-400 Unbuffered DIMM. The TS32MLQ64V4M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Description Placement The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 Micro-DIMM. The TS32MMQ64V5M consists of 4pcs J 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 TS32MLQ64V6M Description Placement The TS32MLQ64V6M is a 32M x 64bits DDR2-667 Unbuffered DIMM. The TS32MLQ64V6M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 256MB With 32Mx16 CL5 TS32MLQ64V6M Description Placement The TS32MLQ64V6M is a 32M x 64bits DDR2-667 Unbuffered DIMM. The TS32MLQ64V6M consists of 4 pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 214PIN DDR2 533 Micro-DIMM 512MB With 32Mx16 CL4 TS64MMQ64V5M Description Placement The TS64MMQ64V5M is a 64M x 64bits DDR2-533 J Micro-DIMM. The TS64MMQ64V5M consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

HYM75V32M636LT6-H

Abstract: HYM75V32M636LT6-K HYM75V32M636T6-H HYM75V32M636T6-K RA12
Contextual Info: 32Mx64 bits PC133 SDRAM SO DIMM based on 32Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM75V32M636 L T6 Series DESCRIPTION The HYM75V32M636(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of four 32Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each

hynix nand spare area

Abstract: HY27 HY27US HY27S HY27US16121M HY27US08121
Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

HY27Us08121a

Abstract: HY27US HY27 48-TSOP1 HY27US08121
Contextual Info: HY27US 08/16 121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft. Draft Date Remark Sep. 2004 Preliminary

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board