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    32N80P Search Results

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    32N80P Price and Stock

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    Littelfuse Inc IXFR32N80P

    MOSFET N-CH 800V 20A ISOPLUS247
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    DigiKey IXFR32N80P Tube 300
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    Newark IXFR32N80P Bulk 300
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    RS IXFR32N80P Bulk 8 Weeks 300
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    • 10000 $14.83
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    Littelfuse Inc IXFK32N80P

    MOSFET N-CH 800V 32A TO264AA
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    DigiKey IXFK32N80P Tube 1
    • 1 $17.62
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    • 100 $9.65
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    Newark IXFK32N80P Bulk 300
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    RS IXFK32N80P Bulk 8 Weeks 300
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    Littelfuse Inc IXFN32N80P

    MOSFET N-CH 800V 29A SOT-227B
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    DigiKey IXFN32N80P Tube 300
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    Newark IXFN32N80P Bulk 300
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    RS IXFN32N80P Bulk 8 Weeks 300
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    Littelfuse Inc IXFX32N80P

    MOSFET N-CH 800V 32A PLUS247-3
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    DigiKey IXFX32N80P Tube 300
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    Newark IXFX32N80P Bulk 300
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    IXYS Corporation IXFX32N80P

    MOSFETs 32 Amps 800V 0.27 Rds
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    Mouser Electronics IXFX32N80P
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    TTI IXFX32N80P Tube 300
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    TME IXFX32N80P 1
    • 1 $15.80
    • 10 $12.62
    • 100 $11.39
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    32N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N80P

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 32N80P IXFX 32N80P VDSS ID25 = 800 V = 32 A Ω ≤ 270 mΩ ≤ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800


    Original     		32N80P O-264 32N80P PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM VDSS = ID25 = RDS on ≤ ≤ trr IXFR 32N80P (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 32N80P PDF

    32n80

    Abstract: ISOPLUS247
    Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 32N80P VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 32N80P 32n80 ISOPLUS247 PDF

    32N80P

    Abstract: PLUS247 IXFK 32N80P TO264 IXFK32N80P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 32N80P IXFX 32N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		32N80P 32N80P PLUS247 IXFK 32N80P TO264 IXFK32N80P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF