32PLN Search Results

27C020-12

Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Contextual Info: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing

Am27C020

Contextual Info: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current

eeprom 2864a

Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
Contextual Info: Cross-Reference and Conversion Guides COMPETITOR CROSS-REFERENCE GUIDE and DC timing and operating characteristics that are different. Please consult the data sheets or your local AMD representative for more details. The following table serves as a cross-reference guide for

28F020A

Abstract: 28F020T
Contextual Info: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

cd009

Contextual Info: Am99C88H 8 1 9 2 x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • • • • • • • High Speed - 35 ns Commercial - 45 ns Military Low active power dissipation - 605 mW Maximum Low standby pow er dissipation - 138 mW Maximum

Contextual Info: El Ad va n ce I n f o r m a t i o n Am28F010 Advanced Micro Devices 131,072 x 8-Bit C M O S Flash E 2PROM DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chlp-Erase ■ — One Second Typical Chip-Erase ■ Compatible with JEDEC Standard Byte

Contextual Info: Am27C64 Advanced Micro Devices 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 45 ns ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to — 20 nA typical CMOS standby current ■ JEDEC-approved pinout

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and

Contextual Info: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­

VA17

Abstract: 32-pln Am27C020
Contextual Info: ADV MICRO 14E 0 | MEMORY 0257520 0027430 h | T ^ i o - \ 3> -Z P \ AdvaAce Information Am27C020 Advanced 2 MBit 256K x 8 ' CMOS EPROM ' . , Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance C M O S technology • Compact 32-pln DIP package requires no hardware

Contextual Info: ADC-321 3’D A T E L 8-Bit, 50MHz Video A/D Converter INNOVATION and E X C E L L E N C E FEA TU RES • • • • • • • • • • Low power dissipation 180m W max. Input signal bandwith (100MHz) Optional synchronized clam p function Low input capacitance (15pF typ.)

Contextual Info: 9‘DATEL ADS- 94 2A 14-Bit, 2MHz, Low-Power Sampling A/D Converters INNOVATION and E X C E L L E N C E FEATURES • • • • • • • • 14-bit resolution 2M Hz minimum throughput Low-power, 2.2 Watts Functionally complete Internal reference and S/H am plifier

Contextual Info: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur­

Zl11

Abstract: A12C
Contextual Info: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time

Contextual Info: DALLAS SEMICONDUCTOR DS2012 4096 x 9 FIFO Chip FEATURES PIN ASSIGNMENT w c 1 26 □ • Flexible 4096 x 9 organization D8C 2 D3C 3 27 • Low-power H C M O S technology D 2C 4 • Asychronous and simultaneous read/write D iC 5 DOC 6 25 24 c 7 FF C 8 QOC 9

mb832000

Contextual Info: UJITSU M I CROE LE CT RO NI CS FU JITSU 23E D • 374=57^2 000^076 T ■ C M O S ^ M -B IT # § t^ S I& MASK-PROGRAMMABLE' READONLY, M E M O R Y MB832000 April 1968 Edition 1.0 -T-MU-15- 1S 2M-BIT 262,144 x 8 CMOS READ ONLY MEMORY The Fujitsu MB832000 Is a CMOS Sl-gate m ask-programmable static read

Contextual Info: LOGIC DEVICES INC 8K X 8 Static RAM 2bE D Low Power FEATURES • 55L.5Ì05 aOGlG3b 7 ■ L 7 C 1 8 5 / L 7 C L 1 8 5 DESCRIPTION 'T ¥ ¿ - 2 3 -/1 li data may be retained in inactive stor­ The L7C185 and L7CL185 are highperformance, low-power CMOS static age with a supply voltage as low as

Z86e4012

Abstract: Z86E40 SXGR 86E4012
Contextual Info: ZIL06 INC 30E D B =1=104043 D017b24 -1. » Z I L - T -4 9 -1 9 -0 7 P r o d u c t S p e c if ic a t io n Z8ÌE40 CMOS Z8 OTP CCP MICROCONTROLLER FEATURES • 8-bit CMOS microcontroller ■ Digital inputs CMOS levels, Schmitt triggered

mb8117400

Contextual Info: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of

27C256

Abstract: 27C256-45 CY27C256
Contextual Info: £C^oo: in u n vo o y, M o y 1 0 , R e v is io n : f r id a y , Ja n u a r y 14, 109-i CY27C256 i? C Y P R E S S 32K x 8-Bit CMOS EPR O M • W id e sp eed range — 45 rts to 200 us co m m ercU l and m ilita ry • Lovr pOTTcr — 248 tnW (co m m ercia l)

adc581

Abstract: ADC85-12 ADC85 ADC85B ADC85C HSADC85 adc hz12b
Contextual Info: Hybrid Systems W W CORPORATION HS ADC85 12-Bit, 10/aS Hybrid ADC FEATURES • -5 5 °C to +125°C Operation ■ M IL-S T D -883 Processing ■ 10/iS Conversion Time ■ Low Power, 1.32W max ■ Replacement for A D C 85/84 and A D C -H X 12B /H Z12B DESCRIPTION

7M4048

Abstract: IDT7M4048
Contextual Info: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs