32R512 Search Results

512r

Abstract: 32R512-9CL 32R512 32R512R-9CL 32R512M-8CW 32R512RM-8CW hbx 300 y
Contextual Info: ¿ m c o n s m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device ta n s A TDK Group/Company October 1992 FEATURES DESCRIPTION The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

32R512

Contextual Info: SSI 32R512/512R m m 1 8 & 9-Channel Thin Film Read/Write Device s v s tm A TDK Group/Company October 1992 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

Contextual Info: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

sol 44

Abstract: H11Y
Contextual Info: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­

sol 44

Abstract: H13Y
Contextual Info: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They

Contextual Info: M W n M k m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device s July, 1990 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

H13Y

Abstract: 5121R H13V
Contextual Info: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

32R501

Abstract: 32R524R 32R524R-8W 32r524
Contextual Info: SSI 32R524R 8-Channel Thin Film Read/Write Device SiiconSuskms 1 July, 1990 DESCRIPTION FEATURES The S S I 32R524R Read/Write device is a bipolar monolithic integrated circuit designed for use with two terminalthinfilm recording heads. It provides a low noise read amplifier, write current control and data

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

32P541B-CL

Contextual Info: ¿ihmsystems' S I L I CO N SYS T EM S INC 4bE D • 0253^5 G G D M 33 2 1 ■ SIL SSI 32P541B Read Data P rocessor A TDK Group f Company T-52-3% July 1991 FEATURES DESCRIPTION The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection

HD13X

Abstract: MAX4727 HD10X
Contextual Info: VM 312H August, 1995 FEATURES • • • • • • • • • CO N N EC TIO N DIAGRAM S High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VFiz Maximum - Input C apacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 5 ^iH

Contextual Info: SILICON SYSTEMS INC OQDbbMb b4T I SIL 0253^5 blE D SSI 32P541B Read Data Processor S i l i c o tn lsó Uu is f a n s A TDK Group/Company 3roup/c T - B Z .-3 *2 2 November 1992 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection

VM312

Abstract: DIODE H5y VM312-8PMJ VM3128
Contextual Info: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum

Contextual Info: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write

Contextual Info: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n

WDI21

Abstract: VM VTC 24-lead
Contextual Info: ## W * V M 312 »ISclSS:- 950801 FEATU R ES • • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 3 nH

3HS2

Contextual Info: SSI 32R524R ¿wmsitskms' 8-Channel Thin Film Read/Write Device A TDK Group/Company 1 November 1991 DESCRIPTION FEATURES The SSI 32R524R Read/Write device is a bipolar monolithic integrated circuit designed for use with two terminal thin film recording heads. It provides a low

Contextual Info: SSI 32P541B Am systems Read Data Processor A TDK Group/Company 2 November 1992 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM or RLL encoded read signals.

32P541B

Abstract: Signal Path Designer 32P541 32P541B-CL
Contextual Info: SSI 32P541B AmmSusfons' Read Data Processor Prelim inary Data June, 1990 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM or RLL encoded read signals. *

Contextual Info: V M W X IS J S S j- 3 1 2 H 14-CHANNEL, h ig h - p e r f o r m a n c e , THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 CO N N EC TIO N DIAGRAM S TWO-TERMINAL PREAMPLIFIERS FE A T U R E S • High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VHz Maximum

DIODE H5y

Contextual Info: w W V M 3 1 2 X J S IS S j. 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEA TU RES The VM312 is a high-performance, low-power, bipolar mono­ lithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write current control, data