330 E72 Search Results

T2D21

Abstract: ic equivalent MID 400 300-12A4 E72873 MJ-132 ON400 300AVge
Contextual Info: MII 300-12A4 IGBT Modules IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V Short Circuit SOA Capability Square RBSOA MII 300-12A4 T1 MID 300-12A4 MDI 300-12A4 3 3 D1 11 10 9 3 T1 D1 8 8 D11 3 2 8 1 9 T2 1 T2 D2 1 1 9 D2 D12 11 11 10 2 E72873 10 2 2 Features

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

Contextual Info: Mil 300-12 A4 Li IXYS IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 300-12 A4 MDI 300-12 A4 330 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' , 3 I 0 M l sc^J 9 0 -+ Preliminary data T O E 72873 Symbol Conditions Maximum Ratings

ic equivalent MID 400

Abstract: E72873
Contextual Info: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

Contextual Info: MII 300-12A4 MID 300-12A4 MDI 300-12A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII 300-12A4 MID 300-12A4 MDI 300-12A4 3 3 11 10 9 3 T1 T1 D1 8 D11 D1 8 3 2 8 1 1 9 1 1 9 T2 T2 D2 10 D2 D12 11

Contextual Info: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il

330 e74

Abstract: 95H28 330 e77 11C06 e79 330
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-ECL E72 95003 E74 95101/10101/10501 E73 95004 E75 95102/10102/10502 8 4 2(6) (9)5 ( 10)6 (11)7 3(7) i > (14)10 (15)11 3 > - (16)12 9(13) (1)13 15(3) V c c i = Pin 1 V c c i = Pin 1 V c c i = Pin 1 (5 ) VCC 2 = Pin 16

Contextual Info: VUO 30 IdAV = 37 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type + + ~~ ~ ~ ~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* ~ – - E72873 * delivery time on request

IXYS VUO 30

Abstract: 30-16NO3 30-12NO3 E72873 30-14NO3 vuo 30 30-12No.3 IXYS VUO 30-14NO3 30-08NO3 800-1800V
Contextual Info: VUO 30 IdAV = 37 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type + + ~~ ~ ~ ~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* ~ – - E72873 * delivery time on request

E72873

Contextual Info: Advanced Technical Information IC80 = 250 A = 1200 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack NPT3 IGBT 2 28 4 6 15 20 25 16 17 21 22 26 27 11/12 29 13 14 9/10 18 19 7/8 23 24 1 E72873 See outline drawing for pin arrangement 3 5 Features IGBTs Symbol

4012-N

Contextual Info: VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ¬

40-08NO6

Abstract: 25080a 735 01 bridge rectifier B 1449 transistor E72873
Contextual Info: VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ①

Contextual Info: MWI 60-12T6K IC25 = 58 A VCES = 1200 V VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 60-2T6K 0, 23 4 8 22 3 7 2 8 , 2 5, 6 9, 20 NTC E72873 Pin coniguration see outlines.

5841a

Abstract: E72873 MWI60-12T6K
Contextual Info: MWI 60-12T6K IGBT Module Sixpack IC25 = 58 A VCES = 1200 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 60-12T6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.

Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G  D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS

85N60C

Abstract: UPS SIEMENS E72873 ID100
Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

85N60C

Abstract: UPS SIEMENS E72873 ID100
Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 94 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

E72873

Abstract: MWI100-12E8
Contextual Info: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement

Contextual Info: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 D3 T3 17 D2 T2 20 D5 T5 NTC 8 19 6 15 3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 24 Preliminary data

E72873

Abstract: MWI100-12E8 100-12E8
Contextual Info: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement

MUBW

Contextual Info: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 24 Preliminary data

4012 IC

Abstract: free ic 4012 brake rectifier motor diode T7 E72873 IC 4012 T7 DIODE
Contextual Info: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 Three Phase