330 FFE Search Results

FUSE fast

Abstract: PKT 4113
Contextual Info: AUTOMATIONWORX User Manual UM EN ILC 330/350 Order No.: 2699370 Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M and ILC 350 PN Inline Controllers AUTOMATIONWORX User Manual Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M

Contextual Info: fax id: 5004 CY7B923 CY7B933 W CYPRESS HOTLink Transm itter/Receiver Features that transfer data over high-speed serial links fiber, coax, and twisted pair . Standard HOTLink data rates range from 160-330 Mbits/second. Higher speed HOTLink is also avail­

TMS320C6711

Abstract: TMS320C6711B bios boot
Contextual Info: 2002-04-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-330-40 DSP 320C6711 TMS320C6711, TMS320C6711B FLOATINGĆPOINT DIGITAL SIGNAL PROCESSORS SPRS088B – FEBRUARY 1999 – REVISED SEPTEMBER 2001

AD8055A

Contextual Info: ANALOG DEVICES Triple 8-Bit, 140 MSPS A/D Converter AD9483 FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input

AS15 G

Abstract: LT4420 as15 h 4420 ba bul 39a s11 stopping compound BUL15 AS15 f LDS 4201
Contextual Info: LT4420 Dual 32-Tap Transversal FIR Filter DEVICES INCORPORATED Advance Information FEATURES 165 MHz Max Data Rate 330 MHz Max Core Clock Rate 16-bit Data and Coefficients Paths 64-Tap FIR Filter, Cascadable for More Filter Taps 512 User-determined Coefficients Options Per Tap

Contextual Info: Semiconductor LM330 3-Terminal Positive Regulator General Description Features The LM 330 5 V 3-term inal positive voltage regulator features an ability to source 150 m A of output current w ith an input-output differential o f 0.6V or less. Fam iliar regulator

lc 245a

Abstract: Lh 245a
Contextual Info: CY7C245A "S CYPRESS Reprogrammable 2048 x 8 Registered PROM SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15 ns max set-up — 1 0 ns clock to output • Low power — 330 mW commercial for

99C88

Abstract: CI 8810 8815A
Contextual Info: Am99C88/Am99CL88 8 K x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access tim es 7 0 /1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max.

MTD3055E

Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
Contextual Info: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount

xf4f

Contextual Info: LT4420 Dual 32-Tap Transversal FIR Filter DEVICES INCORPORATED Advance Information FEATURES 165 MHz Max Data Rate 330 MHz Max Core Clock Rate 16-bit Data and Coefficients Paths 64-Tap FIR Filter, Cascadable for More Filter Taps 512 Coefficients per Tap Multiple Operating Modes: Dual Filter, Single Filter,

x band GaAs MESFET 261

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES_ • Units in mm HIGH POWER GAIN: PACKAGE OUTLINE S01 HIGH OUTPUT POWER: • Lg = 0.8 nm, W g = 330 nm • OUTLINE DIMENSIONS 7 dB TYP at 12 GHz • • NE72is o i 15 dBm TYP at 12 GHz

Contextual Info: ANALO G D E V IC E S FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input 3.3 V /5 .0 V Three-S tate CMOS Outputs

ly2117

Abstract: LY 2117 20/LY 2117 intel 2117 S1123 40ns-e S6054 s6055
Contextual Info: inteT 2117 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modify-Write Cycle (ns) 330 375 475 Non-Latched Output is Three-State, TTL Compatible RAS Only Refresh 128 Refresh Cycles

Contextual Info: CY7C245 CYPRESS SEMICONDUCTOR Reprogrammable 2048 x 8 Registered PROM Features • Windowed for reprogrammability • CM OS for optimum speed/power • High speed — 25 ns max set-up — 12 ns clock to output • Low power — 330 mW commercial for - 3 5 ns, - 4 5 ns

817 CN

Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz PACKAGE OUTLINE 18 ± 0.2 GATE LENGTH: Lg = 0.8 \im (recessed gate 2.1 GATE WIDTH: Wg = 330 \im

INTEL 2118 DRAM

Abstract: 2164A 2164A-20 2164A dynamic ram 2118 dynamic ram intel 2118 FAMILY intel2164A memory ic 2118 210425-001
Contextual Info: in t e i 2164A FAMILY 65,536 x 1 BIT DYNAMIC RAM 2164A-15 2164A-20 Maximum A cce ss Time ns 150 200 Read, Write Cycle (ns) 260 330 Page Mode Read, Write Cycle (ns) 125 170 • HMOS-D III technology ■ Extended page mode, read-modifywrite and hidden refresh operation

NE721S01

Abstract: nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 1 ± DESCRIPTION

om02

Abstract: MSP430 MSP430C111 MSP430C111IDW MSP430C112 MSP430C112IDW MSP430P112 MSP430P112IDW PMS430E112 PMS430E112JL
Contextual Info: MSP430x11x MIXED SIGNAL MICROCONTROLLERS SLAS196B– DECEMBER 1998 – REVISED APRIL 2000 D D D D D D D D Low Supply Voltage Range 2.5 V – 5.5 V Ultra Low-Power Consumption Low Operation Current, 330 µA at 1 MHz,3 V Two Power Saving Modes: – Standby Mode: 1.5 µA

CRCW12062001FT

Abstract: R8085 3296W001501 B51-351-000-220 d9483 c5156
Contextual Info: A N A LO G D E V IC E S FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input 3.3 V /5 .0 V Three-S tate CMOS Outputs

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • OUTLINE DIMENSIONS Units HIGH POWER GAIN: 7 dB TYP at 12 GHz • NE721S01 PACKAGE OUTLINE S01 HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • • Lg = 0.8 [im , Wg = 330 (im LOW PHASE NOISE: -110 dBc/Hz TYP at 11 GHz

intel 2117

Abstract: S6054 2117S
Contextual Info: in t e i 2117 FAMILY 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modlfy-Wrlte Cycle (ns) 330 375 475 N on-Latched Output is Three-State, T T L Com patible RAS Only Refresh 128 Refresh Cycles Required Every 2ms

DCO13

Abstract: 506 k MSP430 MSP430C111 MSP430C111IDW MSP430C112 MSP430C112IDW MSP430P112 MSP430P112IDW PMS430E112
Contextual Info: MSP430x11x MIXED SIGNAL MICROCONTROLLERS SLAS196C– DECEMBER 1998 – REVISED MARCH 2003 D D D D D D D D D Low Supply Voltage Range 2.5 V – 5.5 V Ultralow-Power Consumption: – Active Mode: 330 µA at 1 MHz, 3 V – Standby Mode: 1.5 µA – Off Mode RAM Retention : 0.1 µA

LTA 703 S

Abstract: EM 408 gps beta e 555
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:

CY78933

Abstract: STK*403-130 CY7B923 CY7B9331 CY7B9331-JC CY7B9331-SC
Contextual Info: l ï ' ÏNÏN lW M 'iW "": : » W * ^ w 1 1 KilOD ^ CY7B9331 PRELIMINARY ^= HOTLink™ OLC Receiver Features 330 M bits/second. T he H O T Lin k O LC R eceiver system in te r­ face has been tailore d to m atch O LC O ptical Link Card tim ing and functionality.