337 TRANSISTOR Search Results

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

marking code CSK

Abstract: transistor marking CSK AD004-00 AD004-02
Contextual Info: H Y - L IN E Sensor-Tec Vertriebs GmbH Inselkammerstraße 10 D-82008 Unterhaching Tel.: 089 / 614 503 30 Tel.: 0 8 9 /6 1 4 09 60 S E N S O R - T E C RS 337-7381, 337-7397, 337-7410 GMR Digital Magnetic Field Sensors AP Series NVE s GMR Digital Magnetic Field Sensors offer unique

2sc1815 equivalent

Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

C 337-25

Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
Contextual Info: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

pin configuration PNP transistor BC327

Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1

BD331

Abstract: BD335 TRANSISTOR BD338
Contextual Info: BD331; 333 BD335; 337 _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

b0333

Abstract: Transistor 337 B0337 BD335 TRANSISTOR OF IC 337 BD331 b0335 IM 337 BD334 BD338
Contextual Info: BD331; 333 BP335; 337 J ^ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt

MR2001

Abstract: MRF2005 MRF2016M MRF2003 MRF2003M MRF2001M microwave amplifier 2.4 ghz 10 watts Motorola Microwave power Transistor MRF2010 Narrowband
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 328A-01 f/i. .230' Flangei CASE 337-02 (m .290" Flange) Microwave Applications (continued) 1.7-2.3 GHz Broadband CW The MRF2000M Series of transistors have internal input impedance matching networks which facilitate broadband circuit designs

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4

BC337

Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,

A8 MARKING SOT-23-5

Abstract: A8 diode sot-23 Burr-Brown package drawing 114 sot-23-8 transistor SOT-23-5 OPA2337 OPA2337EA OPA2338 OPA2338EA OPA337
Contextual Info: OPA337 OPA2337 OPA338 OPA2338 OPA 337 OPA 233 7 OPA 233 8 For most current data sheet and other product information, visit www.burr-brown.com MicroSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● MicroSIZE PACKAGES:

OPA2337

Abstract: OPA337 OPA2337EA OPA2338 OPA2338EA OPA337NA OPA338
Contextual Info: OPA337 OPA2337 OPA338 OPA2338 OPA 337 OPA 233 OPA 7 233 8 For most current data sheet and other product information, visit www.burr-brown.com MicroSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● MicroSIZE PACKAGES:

BC358

Abstract: BC327 BC328 BC337 BC338
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,

transistor bc 102

Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

HD6473388CP

Abstract: H8/338 SCR bt 107 H8/337 F783 SCR TRIGGER PULSE SCR TRIGGER PULSE 3 phase H8/336 ssr schematic circuit HD6433388
Contextual Info: OMC 942723036 Hitachi Single-Chip Microcomputer H8/338 Series H8/338 HD6473388, HD6433388, HD6413388 H8/337 HD6473378, HD6433378, HD6413378 H8/336 HD6433368 Hardware Manual Preface The H8/338 Series is a series of high-performance single-chip microcomputers having a fast

Contextual Info: RF2512 11 UHF TRANSMITTER Typical Applications • Single- or Dual-Channel LO Source • 433/868/915MHz ISM Band Systems • FM/FSK Transmitter • Wireless Security Systems • Wireless Data Transmitters Product Description .157 .150 1 .012 .008 .344 .337

Contextual Info: pss Phys. Status Solidi RRL 4, No. 11, 335– 337 2010 / DOI 10.1002/pssr.201004340 Investigation of electron delay www.pss-rapid.com in the base on noise performance in InGaP heterojunction bipolar transistors A. Shimukovitch*, 1, P. Sakalas*, 1, 2, P. Zampardi3, M. Schroter2, 4, and A. Matulionis1

pin configuration PNP transistor BC327

Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

Contextual Info: RF2513 11 UHF TRANSMITTER Typical Applications • Single- or Dual-Channel LO Source • 433/868/915MHz ISM Band Systems • FM/FSK Transmitter • Wireless Security Systems • Wireless Data Transmitters Product Description .157 .150 1 .012 .008 .344 .337

H8/337

Abstract: H8/338 HD6473378F HD6473388CP HD6433388 AN3234 Hitachi DSA0044
Contextual Info: OMC 942723036 Hitachi Single-Chip Microcomputer H8/338 Series H8/338 HD6473388, HD6433388, HD6413388 H8/337 HD6473378, HD6433378, HD6413378 H8/336 HD6433368 Hardware Manual Preface The H8/338 Series is a series of high-performance single-chip microcomputers having a fast