ZVN4306V
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - APRIL 1998 ZVN4306GV - FE A TU R E S * * B V d s s = 60 V * R e p e titiv e A v a la n c h e R a tin g D RDS ON = °-33ii A P P L IC A T IO N S f l H *
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OT223
ZVN4306GV
-33ii
ZVN4306V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D IS CR ET E/ OPT O } 9097250 TOSHIBA ~SÍ D IS C R E T E / O P T O c T | ciQi:i75Sa 0 0 0 7 b 4 3 ñ 5öC 0 7 6 ^ 3 2SC3148 Ü Y -JJ-f/ SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE.
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i75Sa
2SC3148
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PCE2110P
Abstract: PCE2110 PCe2110T 27S19 PCE2100 PCE2111 lcd repairing 20 PIN duplex led display duplex led display
Text: PCE2110 V _ LCD DUPLEX DRIVER G E N E R A L D E SC R IP TIO N The P C E2110 is a single ch ip , silicon gate C-MOS c irc u it designed to drive 2 LEDs L ig h t E m ittin g Diodes) and an LCD (L iq u id C rystal D isplay) w ith up to 6 0 segments in a du plex m anner;
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PCE2110
PCE2110
PCE2110P
PCe2110T
27S19
PCE2100
PCE2111
lcd repairing
20 PIN duplex led display
duplex led display
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BD-AB
Abstract: H644 JC64 CE-BS SB1-S
Text: n Hag`f[`Y , >V\gef_W`f n NbWU[X[USf[a` Ji`U ?H6441AAO /] ,*- d_ -] .,]] z.,m.,]] ^_^~W\_cci gXYdU `Q`Ub{ F`QaeU ]QdUbYQ\c _V ]Y^* z4]] F`QaeU ]QdUbYQ\c _V ]Y^* z2,]] DQh* 01]9 CYWXd c_ebSU IU^cYdYfYdi QTZecd]U^d F`UbQdY_^ ]_TU ;_^db_\ _ed`ed EGE _`U^ S_\\USd_b _ed`ed t C_QT f_\dQWU 6 DQh* /,L<;} C_QT SebbU^d 6 DQh* -,]9} HUcYTeQ\ f_\dQWU 6 DQh* -L
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H6441AAO
33iii2Sgfa`
BD-AB
H644
JC64
CE-BS
SB1-S
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1p39
Abstract: FHD400 schematic diagram vga to av 1N-22 CVA2403T T11A
Text: L o w V.UIOOIW C o s t Triple CRT Driver CORPORATION ' \ J Preliminary Data Sheet CVA2403T FEATURES DESCRIPTION • • • • The CVA2403T is a high input impedance wideband triple amplifier. The device is specifically designed to drive a CRT featuring a high speed buffer for easy matching to a pre-amplifier,
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CVA2403T
65Vr-p
82kHz
CVA2403T
10ns/DIV
1p39
FHD400
schematic diagram vga to av
1N-22
T11A
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WFL104J
Abstract: WFL103J 223J 630V WFL473J WFL473J, 400V 223J 3010J-J-E L6914 6-125L L4914
Text: T H I R D A NGLE P R O J E C T I O N | ITEM CODE A L T E R A T I ON D 1M E N S I O N S C A P A C 1TANCE f¿ F * 0.022(223) 0.024(243) 0.027(273) 0.03 (303) 0.033(333) 0.036(363) 0.039(393) 0.043(433) 0.047(473) 0.051(513) 0.056(563 ) 0.062(623) 0.068(683)
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ECWF4223
ECWF4244
WFL103J
WFL473J
500VDC,
3017J-
WFL104J
223J 630V
WFL473J
WFL473J, 400V
223J
3010J-J-E
L6914
6-125L
L4914
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ULN-3311
Abstract: FLC 100 metal detector 3312D ULN3311T ULN-3312T 3312T
Text: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE/ S E M I C O N D S / ICS 03 D _• flS13flSQ □ 004L.flcj 7 03E 04689 ULN-3311D/T AND ULN-3312D/T PRECISION LIGHT SENSORS ULN-3311D/T AND ULN-3312D/T PRECISION LIGHT SENSORS With Calibrated Current Amplifiers FEATURES
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flS13flSQ
ULN-3311D/T
ULN-3312D/T
-3312D
ULN-3311
FLC 100 metal detector
3312D
ULN3311T
ULN-3312T
3312T
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8205M
Abstract: 8206M 8205-M T-sa-53 25981
Text: SANYO SEMICONDUCTOR CORP 12E D I 7 ^ 7 0 7 ^ 0003111 £ LA8205, 8205M, 8206M; >53-1V i 301OA 3108 M onolithic Linear IC Read/Write Amplifier for H DD Use Use . Small-sized Hard Disk Drive Functions . Read/write amp 4 channels . Head select logic . Read/write mode select logic
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LA8205,
8205M,
8206M;
301OA
00V/V
LA8205
8205M
8205M
8206M
8206M
8205-M
T-sa-53
25981
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON BTA40 A/B STANDARD TRIACS FEATURES . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : dV/dt c> lOV^is • BTA Family : INSULATING VOLTAGE = 2500V(rMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA40 A/B triac family are high performance glass passivated PNPN devices.
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BTA40
E81734)
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4461N
Abstract: ic 4466 LA4465 transistor bc 132
Text: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§|lSi>id ei ¿ la n g e s m u st
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2080C
LAAA65^
200uA/typ.
LA446S
0i01u
100ohms
4461N
ic 4466
LA4465
transistor bc 132
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3825D
Abstract: 3325D 1125D ac motor triac bta41 10E-02 t2t triac 2225D BTA25-XXXA RD-91 weight 2.5-A triac 400 V
Text: TRAL 1125D — > 3825D SGS-THOMSON * 7 w M »iL[EœMO(gS STANDARD TRIACS FEATURES • I g t s p e c if ie d in f o u r q u a d r a n t s ■ EXCELLENT THERMAL IMPEDANCE PACKAGE ■ HIGH COMMUTATION, (dV/dt c> 10 V/|xs DESCRIPTION The TRAL 1125D -> 3825D are high performance
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1125D
3825D
1125D
3825D
BTB41-xxx
TRALxx35
c12c1237
3325D
ac motor triac bta41
10E-02
t2t triac
2225D
BTA25-XXXA
RD-91 weight
2.5-A triac 400 V
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IRGKI115U06
Abstract: C779 LC115
Text: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI115U06
25KHz
100KHz
C-781
IRGK1115U06
C-782
IRGKI115U06
C779
LC115
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AP12A
Abstract: IMS xga IMS G191
Text: / T T SGS-THOMSON * 7# M ^ omi©raQ M(g§ TECHNICAL NOTE HARDWARE DESIGN WITH THE IMS G191 SERIALIZER PALETTE-DAC 23.1 Introduction To obtain the best possible picture quality from the SGS-THOMSON IMSG191 XGA display device, it is essential that it operates in a quiet electrical environment and that its input and output signals comply strict
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IMSG191
AP12A
IMS xga
IMS G191
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JY marking transistor
Abstract: Transistor 5331 MRB11080Y
Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates
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fafa53T31
1SD47
MRB11080Y
FO-67
JY marking transistor
Transistor 5331
MRB11080Y
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TA8205AH
Abstract: No abstract text available
Text: MIL i t ws; TA8205AH 18W BTL x 2CH AUDIO POWER AMPLIFIER The thermal resistance ^j-T of TA8205AH package designed for low thermal resistance, has a high efficiency of heat radiation. The temperature rise of chip can be reduced, and the influence from the degradation of the features due to
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TA8205AH
TA8205AH
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1N4690
Abstract: capacitor c3a capacitor c3b MAX736 MAX737 MAX739 MAX759 MAX737CPD ZENER DIODE J3 MAX736cpd
Text: M A X 739 E valuation K it Features ♦ Output Voltage: -12V MAX736 -15V (MAX737) -5V (MAX739) Adjustable, OV to -15V (MAX759) The EV kit contains a printed circuit board and all com ponents needed to evaluate an application circuit. The PC board is common to the MAX736/MAX737/MAX739/
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MAX739
MAX736/MAX737/MAX739/
MAX759.
MAX736/MAX737/MAX739
MAX759
MAX736/MAX737)
MAX739/wn
MAX736
MAX737
1N4690
capacitor c3a
capacitor c3b
MAX737CPD
ZENER DIODE J3
MAX736cpd
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SV231 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V2 3 1 CATV TUNING. • High Capacitance Ratio : C2 v/C- 2 5 V = 15 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.
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1SV231
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PS8106
Abstract: No abstract text available
Text: fl} PERICOM Precision Clock Generator Description: Features: • • • • • • • • • • Low-cost clock generator Provides precision frequencies for 56K modem applications. Crystal Frequency: 18.432 MHz Provides either 2 clock or 4 clock outputs via mode select
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16-pin
SSOP16)
PI6C1288-03
HC-49/S
PS8106
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PDF
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Untitled
Abstract: No abstract text available
Text: High-Speed Board Designs May 1999, ver. 3 Introduction A pp lication Note 75 To create a successful high-speed printed circuit board PCB , you must integrate the device(s), PCB(s), and other elem ents into the design. Altera devices have fast I /O pins, with fall times that can be as low as
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ps8c
Abstract: 125H
Text: . . IG B T& FW D [ITLtKSTÔSOE 1sT 1MB 05D-120 Fuji Discrete Package IGBT • Outline Drawing ■ Features • Square RBSOA •LowSaturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance ■ Applications • High Power Switching
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05D-120
702708-Dallas,
ps8c
125H
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PDF
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aj 312
Abstract: c246
Text: 4 DRAWING THIS MA D E IN THIRD DRAWING 2 ANGLE IS 3 UNP0BDI5HED. COPYRIGHT RE D E AS E D 19 BY AMP FOR PÜBDICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI ST L OC ,19 AJ RESERVED. 16 REV I 5 I 0 N5 P F Z O NE LTR DESCRIPTION E 0B5 - 1 3
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0U20-0072-01
16APR01
33bc4
16-APR-01
aj 312
c246
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PDF
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SCR TYN 808
Abstract: TYN058 scr tyn 408 tyn 5 10E-02
Text: 5L.E D • 7 ^ 2 3 7 00M321Û «Ì33 ■ S 6 T H SGS-THOMSON TXN/TYN 058 G - > IILIWMO ! TXN/TYN 1008 (G) S G S-TH0MS0N 2 ^ S - O S ' SCR FEATURES ■ HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY ■ TXN Serie : INSULATED VOLTAGE = 2500V(RMS)
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7R2R237
E81734)
400Hz
Fig12
SCR TYN 808
TYN058
scr tyn 408
tyn 5
10E-02
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PDF
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headphone operational amplifier ad822
Abstract: No abstract text available
Text: ANALOG DEVICES □ Single Supply, Rail-to-Rail Low Power FET-Input Op Amps AD820/AD822 FEATURES TRUE SINGLE SUPPLY OPERATION Output Swings Rail to Rail Input Voltage Range Extends Below Ground Single Supply Capability from +3 V to +36 V Dual Supply Capability from ±1.5 V to ±18 V
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AD820/AD822
AD822
headphone operational amplifier ad822
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PDF
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2225D
Abstract: 3825D
Text: TRAL 1125D — > 3825D SGS-THOMSON * 7 w M »iL [E œ M O (g S STANDARD TRIACS FEATURES • I g t s p e c if ie d in f o u r q u a d r a n t s ■ EXCELLENT THERMAL IMPEDANCE PACKAGE ■ HIGH COMMUTATION, (dV/dt c> 10 V/|xs DESCRIPTION The TRAL 1125D -> 3825D are high performance
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1125D
3825D
3825D
TRALxx35
2225D
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PDF
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