FDH666
Abstract: FDH600
Text: FAIRCHILD SE MIC OND UC TOR s s p A Schlumberger Company B4 : DE~J 34bTb?4 00E733S A B S S S fg a S S A“ " ' Ultra Fast Diodes PACKAGES • C . .2.5 pF MAX FDH600, 3.5 pF (MAX) FDH666 • VF . . . 1.0 V (MAX) @ 100 mA (FDH666) . . . 1.0 V (MAX) @ 200 mA (FDH600)
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l4bTb74
00S733S
FDH666/FDLL666
FDH600,
FDH666
FDH666)
FDH600)
FDH666
FDH600
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1S921
Abstract: 1S920 1s922 equivalent 1s923
Text: FAIRCHILD SEMICON DUC TO R A4 DEr| 34bTb74 DDS7S0D A 1S920/921/922/923 FDLL920/921/922/923 FAIRCHILD A Schlumberger Company General Purpose Diodes _ T - ° \ ' o C \ • V p . . . 1.2 MAX @ 200 mA • Ir . . 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1)
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34bTb74
1S920/921/922/923
FDLL920/921/922/923
DO-35
LL-34
1S921
1S920
1s922 equivalent
1s923
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IRF510
Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power
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IRF510-513
MTP4N08/4N10
O-220AB
IRF510
IRF511
IRF512
IRF513
MTP4N08
MTP4N10
IRF510-513
IRF510
Gate Drive circuit for irf510
irf510 power
IRF5105
7937
4N10
DD57
IRF511
IRF512
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B1030
Abstract: high voltage swiching transistors swiching full KSC2752
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V
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KSC2752
300ns,
00bDb7M
B1030
high voltage swiching transistors
swiching full
KSC2752
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34B SOT
Abstract: NDT455N
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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NDT455N
NDT455N
OT-223
34B SOT
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N55C
Abstract: NDB6060 NDB6060L NDP6060L
Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g
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NDP6060L
NDB6060L
NDP6060LRev.
NDB6060LRev.
34bTb74
N55C
NDB6060
NDB6060L
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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y1999
FDG6304P
FDG6304P
34bTb74
0Pb28c
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR ru NC7ST32 TinyLogic 2-Input OR Gate General Description Features The NC7ST32 is a single 2-Input high performance CMOS OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation. ESD protection diodes inherently guard
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NC7ST32
NC7ST32
MM74HCT
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Untitled
Abstract: No abstract text available
Text: National S e m i c o n d u c t o r 1' June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT454P
NDT454P
OT-223
34bTb74
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8s00
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm NC7ST00 TinyLogic 2-Input NAND Gate General Description Features The NC7STOO is a single 2-Input high performance CMOS NAND Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power
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NC7ST00
MM74HCT
34bTb
8s00
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Untitled
Abstract: No abstract text available
Text: September 1996 N ational S e m i c o n d u c t o r 1' NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features P ow er SO T lo gic level N-C hannel e n h a n ce m e n t m o d e fie ld e ffect tra n s is to rs are pro d u ce d using
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NDT3055L
OT-223
34bTb74
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Untitled
Abstract: No abstract text available
Text: M ay 1994 N NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's
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NDP410A
NDP410AE
NDP410B
NDP410BE
NDB410A
NDB410AE
NDB410B
NDB410BE
NDP410
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Untitled
Abstract: No abstract text available
Text: September 1996 National S e m i c o n d u c t o r 1' NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT3055
OT-223
34bTb74
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MPSL08
Abstract: 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08
Text: FAIRCHILD SEMICON DUC TO R s 3469674 F A IR C H IL D f l4 84D SEM ICONDUCTOR • • • 27596 " |~ D N P N S m all Signal G en eral Purpose A m p lifie r & O sc illa to r A Schlumberger Company • 3 2N5223/FTS05223 FAIRCHILD • • D eT J PACKAGE 2N5223
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275cit]
2N5223/FTS05223
2N/FTS05227
100MHz
MPSL08
2N5224
schlumberger 5225
2N5226
2N5223
2N5225
2N5227
2N5228
2N5224 current gain
mps-l08
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2N2907A FAIRCHILD SEMICONDUCTOR
Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
Text: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE
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34bcit174
2N2710/FTS02710
2N2710
FTS02710
O-236AA/AB
2N3107)
2N3108)
2N3109)
140kHz
2N2907A FAIRCHILD SEMICONDUCTOR
2N2904 transistor TO92
2N3053 characteristic curves
Fairchild, 2N3019
2N2904 FAIRCHILD SEMICONDUCTOR
2N2907A fairchild
FTS02907A
TRANSISTOR 2n3108
fairchild 2n3019
transistor 2N 3020
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mps 444
Abstract: ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144
Text: &H FAIRCHILD SEM ICO NDUCTOR DE ÍB Mb Tb 74 005737b MPS3392/FTS03392 MPS3393/FTS03393 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers - — « « • . . . 25 V M in hFE . • • 150-300 (M P S /FT S 03392), 90-180 (M P S /FT S 03393)
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MPS/FTS03392)
MPS/FTS03393)
2N4125,
2N4126
MPS3392
MPS3393
FTS03392
FTS03393
O-236AA/AB
O-236AA/AB
mps 444
ib74
2N4125
2N4126
FTS03392
FTS03393
MPS3392
MPS3393
t144
curve set t144
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MPS A56 transistor
Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
Text: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures
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D0S73TE
MPSA10
E74DE
MPS A56 transistor
MPS 3117
T164
MPS A13 transistor
A42 MPSA42 NPN
FTSOA12
MPSA12
MPSA13
Schlumberger
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2N6760
Abstract: MF2400 2N6759 E7A04
Text: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power
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34tTb74
2N6759/2N6760
T-39-11
2N6759
2N6760
2N6760
E7A04
MF2400
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fairchild 2N2222A
Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min
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QDE75D4
2N718A
2N1613
fairchild 2N2222A
2n2222a fairchild
2N2222 curve
2N2219 Fairchild
2N2219A FAIRCHILD SEMICONDUCTOR
2N1613 fairchild
2222A fairchild
tr 2n2222
T145
2N2222-PN2222
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR NC7ST86 TinyLogic™ 2-Input Exclusive-OR Gate General Description Features The NC7ST86 is a single 2-Input high performance CMOS Exclusive-OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low
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NC7ST86
NC7ST86
MM74HCT
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm 74ACQ240 • 74ACTQ240 Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs General Description Features The ACQ /A CTQ 240 is an inverting octal buffer and line driver designed to be employed as a memory address driver,
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74ACQ240
74ACTQ240
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Untitled
Abstract: No abstract text available
Text: s e m ic o n d u c t o r NC7SZ38 Tiny Logic™ UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-lnput NAND Gate with open drain output stage from Fairchild's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The de
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NC7SZ38
NC7SZ38
8Q-534
2736-996Q
34bTb74
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR ,u NC7SZ00 TinyLogic UHS 2-Input NAND Gate General Description Features The NC7SZOO is a single 2-Input NAND Gate from Fair child's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with ad
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NC7SZ00
34bTb74
03315A
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTO R ru NC7S00 TinyLogic 2-Input NAND Gate General Description Features The NC7S00 is a single 2-Input high performance CMOS NAND Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes in
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NC7S00
NC7S00
34bRb74
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