Untitled
Abstract: No abstract text available
Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It
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SUF-1033DC
20GHz,
SUF-1033
16-Pin,
SUF-1033
20GHz.
DS120301
SUF-1033SB
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Untitled
Abstract: No abstract text available
Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It
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SUF-1033
SUF-1033DC
20GHz,
16-Pin,
SUF-1033
20GHz.
14dBm
DS120531
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Untitled
Abstract: No abstract text available
Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: QFN, 16-Pin, 3mm x 3mm Product Description Features Gain and Return Loss versus Frequency VDD = 5V, RBIAS = 33Ƙ Optimum Technology
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SUF-1033
SUF-1033DC
20GHz,
16-Pin,
14dBm
SUF-1033SB
SUF-1033SQ
25-piece
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Untitled
Abstract: No abstract text available
Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It
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SUF-1033DC
20GHz,
SUF-1033
16-Pin,
SUF-1033
20GHz.
14dBm
DS120220
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Untitled
Abstract: No abstract text available
Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It
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SUF-1033DC
20GHz,
SUF-1033
16-Pin,
SUF-1033
20GHz.
DS120531
SUF-1033SB
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Untitled
Abstract: No abstract text available
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They
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SDA-5000
102mm
SDA-5000
35GHz
17dBm
100mA
DS140210
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Untitled
Abstract: No abstract text available
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a
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SDA-5000
45mmx0
102mm
SDA-5000
35GHz
17dBm
100mA
35GHz,
SDA5000SB
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Untitled
Abstract: No abstract text available
Text: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2040D
25GHz
25GHz
RFSW2040D
20GHz
22-A114.
MIL-STD-1686
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JESD22-A114
Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a
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SDA-5000
45mmx0
102mm
SDA-5000
17dBm
100mA
35GHz,
SDA5000SB
DS091021
JESD22-A114
SDA5000
GaN Amplifier 20GHz
DC TO 20GHZ RF AMPLIFIER MMIC
DC 20GHz HBT amplifier
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RFSW2040D
Abstract: RFSW-2040
Text: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2040D
25GHz
RFSW2040D
20GHz
22-A114.
MIL-STD-1686
RFSW-2040
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DS130108
Abstract: SGL-06SMT2
Text: SGL-06SMT2 SGL-06SMT2 1:1 SMT Transformer 5MHz TO 4000MHz LOW-NOISE AMPLIFIER Package: SMT2, 4-pin, 11.42mm x 11.42mm x 4.32mm 40 30 Features 27dB Gain at 1.575GHz 20 1.4dB Noise Figure at 1.575GHz 10 Single 3.3V Supply Operation Integrated Active Bias Circuit
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SGL-06SMT2
SGL-06SMT2
4000MHz
575GHz
MIL-STD-883
DS130108
100MHz-4GHz
DS130108
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Ferrite Circulators at 15 ghz
Abstract: medical ultra micro coaxial cable Aeroflex KDI Resistor military resistors catalog MIL-STD-1553 cable connector KDI attenuator SURFACE MOUNT DIODES MIL GRADE kdi mixer analog phase shifters chip gsm multicoupler
Text: ned by three tured above: mer-focused. hts reserved. me021r1_Aeroflex Micro. Bro.qxd 5/17/06 4:00 PM Page 1 RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 me021r1_Aeroflex Micro. Bro.qxd
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me021r1
Ferrite Circulators at 15 ghz
medical ultra micro coaxial cable
Aeroflex KDI Resistor
military resistors catalog
MIL-STD-1553 cable connector
KDI attenuator
SURFACE MOUNT DIODES MIL GRADE
kdi mixer
analog phase shifters chip
gsm multicoupler
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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HMC440
Abstract: HMC440QS16G choke marking nb 03 HMC364G8 metal detector plans MMIC marking 81 HMC392 HMC395 body contact soi FET 2003 HMC397
Text: OFF-THE-SHELF SUMMER 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. MMIC VCO PRODUCT LINE EXPANDS ! * 24 NEW PRODUCTS RELEASED! Product Showcase Wideband Low Noise Amp HMC463 • 2 - 20 GHz • 14 dB Gain • 2.5 dB Noise Figure • Single +5V Supply
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HMC463
OC-48
OC-192
ISO9001-2000
HMC440
HMC440QS16G
choke marking nb 03
HMC364G8
metal detector plans
MMIC marking 81
HMC392
HMC395
body contact soi FET 2003
HMC397
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Bt 2313
Abstract: AU 6256 bt 1488 22202 capacitor 344 21225 3429 vectron Lowpass Filter 3 GHz 10393 making 7136 1004 BT 816 transistor
Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS
Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104
Text: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design
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JULY2010
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS
huawei microwave Antennas
SC1887
thales smd 68
wispry
"RF Connector" tyco instruction sheet 411 3255
HUAWEI Base Station
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
HFSO1000-12
scintera application note 104
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avantek
Abstract: micro-x 64135 Avantek amplifier 167 MGA-64135 Avantek rf amplifier
Text: MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avantek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Ci Gain Block Broadband Performance: 2-6 GHz 12.0dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic Microstrip Package
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MGA-64135
avantek
micro-x 64135
Avantek amplifier 167
Avantek rf amplifier
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A08 monolithic amplifier MMIC MAR-8
Abstract: No abstract text available
Text: O MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avkntek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Cl Gain Block Broadband Performance: 2-6 GHz 12.0 dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic M icrostrip Package
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MGA-64135
310-37t-8717or31
0-37l-8478
A08 monolithic amplifier MMIC MAR-8
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Untitled
Abstract: No abstract text available
Text: Features 35 micro-X Package1 Cascadable 50 LI Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB typical at 0.5 GHz • Low Noise Figure: 2.8 dB typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package
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MSA-0635,
H447564
MSA-0635
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T8995
Abstract: MT8994 Rato RT 0104 T8972
Text: MT8994/5B Digital Telephone * is o 2-cm o s st-b u s f a m ily •VI I T E L D-Phone 9161 -002-093-N A ISSUE 6 Novem ber 1991 Features Ordering Information • Integrated digital telephone circuit MT8994/5BC • /i-Law/A-Law codec and filters p-Law/A-Law 40 Pin Cerdip
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MT8994/5B
-002-093-N
bE4T37D
T8995
MT8994
Rato RT 0104
T8972
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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MSAN-126
Abstract: MT8930 MT8972 75n33 materi IC 566
Text: M IT E L MT8992/3B Digital Telephone with HDLC is o 2-cm o s st-b u s fa m ily H-Phone 9161-002-103-NA ISSUE 5 November 1991 Features O rdering Inform ation • Integrated digital telephone circuit MT8992/3BC • ¿i-Law/A-Law codec and filters ii-Law/A-Law 40PinCerdip
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MT8992/3B
9161-002-103-NA
MT8992/3BC
40PinCerdip
MSAN-126
MT8930
MT8972
75n33
materi IC 566
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