35 MICRO-X CERAMIC PACKAGE MMIC Search Results

avantek

Abstract: micro-x 64135 Avantek amplifier 167 MGA-64135 Avantek rf amplifier
Contextual Info: MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avantek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Ci Gain Block Broadband Performance: 2-6 GHz 12.0dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic Microstrip Package

A08 monolithic amplifier MMIC MAR-8

Contextual Info: O MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avkntek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Cl Gain Block Broadband Performance: 2-6 GHz 12.0 dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic M icrostrip Package

Contextual Info: Features 35 micro-X Package1 Cascadable 50 LI Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB typical at 0.5 GHz • Low Noise Figure: 2.8 dB typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: QFN, 16-Pin, 3mm x 3mm Product Description Features Gain and Return Loss versus Frequency VDD = 5V, RBIAS = 33Ƙ Optimum Technology

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They

Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

Contextual Info: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

JESD22-A114

Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

RFSW2040D

Abstract: RFSW-2040
Contextual Info: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

DS130108

Abstract: SGL-06SMT2
Contextual Info: SGL-06SMT2 SGL-06SMT2 1:1 SMT Transformer 5MHz TO 4000MHz LOW-NOISE AMPLIFIER Package: SMT2, 4-pin, 11.42mm x 11.42mm x 4.32mm 40 30 Features 27dB Gain at 1.575GHz 20  1.4dB Noise Figure at 1.575GHz 10  Single 3.3V Supply Operation  Integrated Active Bias Circuit

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

HMC440

Abstract: HMC440QS16G choke marking nb 03 HMC364G8 metal detector plans MMIC marking 81 HMC392 HMC395 body contact soi FET 2003 HMC397
Contextual Info: OFF-THE-SHELF SUMMER 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. MMIC VCO PRODUCT LINE EXPANDS ! * 24 NEW PRODUCTS RELEASED! Product Showcase Wideband Low Noise Amp HMC463 • 2 - 20 GHz • 14 dB Gain • 2.5 dB Noise Figure • Single +5V Supply

qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
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Bt 2313

Abstract: AU 6256 bt 1488 22202 capacitor 344 21225 3429 vectron Lowpass Filter 3 GHz 10393 making 7136 1004 BT 816 transistor
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of

T8995

Abstract: MT8994 Rato RT 0104 T8972
Contextual Info: MT8994/5B Digital Telephone * is o 2-cm o s st-b u s f a m ily •VI I T E L D-Phone 9161 -002-093-N A ISSUE 6 Novem ber 1991 Features Ordering Information • Integrated digital telephone circuit MT8994/5BC • /i-Law/A-Law codec and filters p-Law/A-Law 40 Pin Cerdip

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS

Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104
Contextual Info: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design

MSAN-126

Abstract: MT8930 MT8972 75n33 materi IC 566
Contextual Info: M IT E L MT8992/3B Digital Telephone with HDLC is o 2-cm o s st-b u s fa m ily H-Phone 9161-002-103-NA ISSUE 5 November 1991 Features O rdering Inform ation • Integrated digital telephone circuit MT8992/3BC • ¿i-Law/A-Law codec and filters ii-Law/A-Law 40PinCerdip