358MW Search Results

D-50

Abstract: MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
Contextual Info: O K I Semiconductor This version:Apr,1999 M S M 5 1 1 7 4 0 0 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E TYPE D ESC R IP TIO N The MSM5117400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MAX9938

Abstract: MAX9938TEBS
Contextual Info: 19-4110; Rev 6; 1/11 KIT ATION EVALU E L B AVAILA 1µA, 4-Bump UCSP/SOT23, Precision Current-Sense Amplifier Features ♦ Ultra-Low Supply Current of 1µA max ♦ Low 500µV (max) Input Offset Voltage ♦ Low < 0.5% (max) Gain Error The MAX9938 high-side current-sense amplifier offers

MSM5116400F

Abstract: MSM5116400
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

marking abw

Abstract: 6-PIN PACKAGE MARKING 205 MAXIM MAX7393 MAX7394 tDFN 2mm 6pin MAX7394ALTZH 922KHz
Contextual Info: 19-3876; Rev 0; 5/06 Precision Silicon Oscillators with Enable or Autoenable The MAX7393/MAX7394 precision silicon oscillators replace crystals, ceramic resonators, and crystal oscillator modules in systems with a +2.4V to +3.6V operating supply voltage range.

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

GG41

Contextual Info: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

affb

Abstract: MAX9938 MAX9938TEBS 2x2 dfn 210117
Contextual Info: 19-4110; Rev 4; 2/10 KIT ATION EVALU E L B AVAILA 1µA, 4-Bump UCSP/SOT23, Precision Current-Sense Amplifier Features ♦ Ultra-Low Supply Current of 1µA max ♦ Low 500µV (max) Input Offset Voltage ♦ Low < 0.5% (max) Gain Error The MAX9938 high-side current-sense amplifier offers

marking ABW 10-pin

Contextual Info: 19-0744; Rev 2; 6/07 KIT ATION EVALU E L B AVAILA Single, Dual, Triple, and Quad Standard-Definition Video Filter Amplifiers with AC-Coupled Input Buffers Features ♦ Single- MAX9586 , Dual- (MAX9587), Triple- (MAX9588), and Quad- (MAX9589) Channel Devices

Contextual Info: 19-0744; Rev 0; 2/07 Single, Dual, Triple, and Quad Standard-Definition Video Filter Amplifiers with AC-Coupled Input Buffers Features ♦ Single- MAX9586 , Dual- (MAX9587), Triple- (MAX9588), and Quad- (MAX9589) Channel Devices ♦ 7MHz, ±1dB Passband ♦ 62dB Attenuation at 27MHz

Contextual Info: WM8199 w 20MSPS 16-bit CCD Digitiser DESCRIPTION FEATURES The WM8199 is a 16-bit analogue front end/digitiser IC which processes and digitises the analogue output signals from CCD sensors or Contact Image Sensors CIS at pixel sample rates of up to 20MSPS.

Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.

814400

Abstract: marking CEZ MAS 10 RCD mb814400 MB814400-10 MB814400-12 MB814400-80 ZIP-20P-M02 marking Z1p
Contextual Info: Novem ber 1991 Edition3.0 :• , .-y,-.:. FUJITSU . DATASHEET M B 8 1 4400-80/-10/-12 CMOS 1 M X 4 B I T FAST PAGE MODE DRAM CM O S 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

MSM5116400F

Abstract: MSM5116400
Contextual Info: FEDD5116400F-01 1Semiconductor MSM5116400F This version: May 2001 Previous version :  4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

TL431

Abstract: 10H116 CLC404 CLC505 CXA3086Q NJM3403A TL431CP
Contextual Info: CXA3086Q 6-bit 140MSPS Flash A/D Converter Description The CXA3086Q is an 6-bit high-speed flash A/D converter capable of digitizing analog signals at the maximum rate of 140MSPS. ECL, PECL or TTL can be selected as the digital input level in accordance with the application. The TTL digital output level

Contextual Info: O K I semiconductor M S M 5 1 4 2 5 8 A _ 262,144-W O R D x 4-B IT DYNAM IC RAM GENERAL DESCRIPTION The MSM514258A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514258A is OKI's CMOS silicon gate process technology.

MSM5116400D

Abstract: D-50 D-60 MSM5116400 MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption

MSM518205

Contextual Info: J2G0030-17-41 作成：1998年 1月 MSM518205 l 前回作成：1997年 5月 ¡ 電子デバイス MSM518205 4,194,304-Wordx2-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM518205はCMOSプロセス技術を用いた4,194,304ワ−ド×2ビット構成のダイナミックランダムア

D-50

Abstract: D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

Contextual Info: SONY CXA3086Q 6-bit 140MSPS Flash A/D Converter Description The CXA3086Q is an 6-bit high-speed flash A/D converter capable of digitizing analog signals at the maximum rate of 140MSPS. ECL, PECL or TTL can be selected as the digital input level in accordance

Marking b4 SOT23-5

Abstract: AFFB SOT23-5 SOT23-6 MARKING b4
Contextual Info: 19-4110; Rev 5; 8/10 KIT ATION EVALU E L B AVAILA 1µA, 4-Bump UCSP/SOT23, Precision Current-Sense Amplifier Features ♦ Ultra-Low Supply Current of 1µA max ♦ Low 500µV (max) Input Offset Voltage ♦ Low < 0.5% (max) Gain Error The MAX9938 high-side current-sense amplifier offers

AMV QFN

Abstract: MARKING ABY DFN TDFN-6
Contextual Info: 19-3876; Rev 0; 5/06 Precision Silicon Oscillators with Enable or Autoenable The MAX7393/MAX7394 precision silicon oscillators replace crystals, ceramic resonators, and crystal oscillator modules in systems with a +2.4V to +3.6V operating supply voltage range.

SOT23-6 MARKING b4

Abstract: AFFB SOT23-5
Contextual Info: 19-4110; Rev 4; 2/10 KIT ATION EVALU E L B AVAILA 1µA, 4-Bump UCSP/SOT23, Precision Current-Sense Amplifier Features ♦ Ultra-Low Supply Current of 1µA max ♦ Low 500µV (max) Input Offset Voltage ♦ Low < 0.5% (max) Gain Error The MAX9938 high-side current-sense amplifier offers

82c31

Contextual Info: CXA3086Q 6-bit 140MSPS Flash A/D Converter Description The CXA3086Q is an 6-bit high-speed flash A/D converter capable of digitizing analog signals at the maximum rate of 140MSPS. ECL, PECL or TTL can be selected as the digital input level in accordance with the application. The TTL digital output level