359MM Search Results

FDD6672A

Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F63TNR FDD2570 FDD6680
Contextual Info: FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.7 A, 150 V. RDS ON = 80 mΩ @ VGS = 10 V

CBVK741B019

Abstract: F63TNR FDD6680 FDD6690A
Contextual Info: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior

CBVK741B019

Abstract: F63TNR FDD5612 FDD6680
Contextual Info: FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V.

Mosfet FDD

Abstract: ON 534 TO252 fdd 690
Contextual Info: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

6680

Abstract: FZ9935
Contextual Info: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated

Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

siba

Abstract: 2077132 siba nh gl Part DC92-01021B installation diagram SIBA FUSE FF 500 mA SIBA 50 A Ultra Rapid 50 201 06 Siba 20 209 20
Contextual Info: copyright 2014 Maryland Metrics/SIBA Sicherungen-Bau GmbH 201 are available from: MARYLAND METRICS Our protection. Your benefit. SIBA Products are available from: MARYLAND METRICS P.O.Box 261 Owings Mills, MD 21117 USA phones: 410 358-3130 (800) 638-1830 faxes: (410) 358-3142 (800) 872-9329

d-pak DEVICE MARKING CODE table

Abstract: CBVK741B019 F63TNR FDD3680 FDD6680 C4692
Contextual Info: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 25 A, 100 V.

6-71-M74J0-D03A

Abstract: RTL8111 RTL8111 schematic rsn 3502 a RS780M CLEVO LG-2402P-1 RS780MC 6-71- M74 oz839
Contextual Info: Preface Notebook Computer M740J/M740JU/M760J/M760JU Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

FDB7045L

Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Contextual Info: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

EOH-KUMUPB0-GG

Abstract: ta530 HRS CIF
Contextual Info: Spec No. Date Page Ver. A-TH-044-00 2008/11/25 1/16 A-00 Super Top LED STL / E5 Series PART NO. : EOH-KUxUPB0-GG Technical Description STL /E5 series is EOI’s newest generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows

6680 equivalent ic no

Abstract: FDS6680S CBVK741B019 F63TNR FDD6680 FDD6680A FDD6680S FDS6680
Contextual Info: FDD6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

EOH-KTHUCB0-EN

Abstract: EOH-KTBUCB0-EN SN60 LED circuit design EOH-KTY
Contextual Info: Spec No. Date Page Ver. A-TH-031-00 2008/11/25 1/16 A-00 Super Top LED STL / E5 Series PART NO. : EOH-KTxUCB0-xx Technical Description STL /E5 series is EOI’s newest generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows

6680 MOSFET

Abstract: CBVK741B019 F63TNR FDD6680 40V 14A TO-252 14A, 50V, Logic Level, N-Channel TO-252 Mosfet FDD
Contextual Info: FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

zener diode 3.0 b2

Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Contextual Info: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

FDD6680

Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
Contextual Info: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Mosfet FDD

Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Contextual Info: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

DSAS 13-0

Abstract: d92 02 a9hv
Contextual Info: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

170M8554

Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

marking 6A STO 23

Abstract: CBVK741B019 F63TNR FDD6630A FDD6680 6680 MOSFET
Contextual Info: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

a9hv

Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.