35A 500V Search Results

IR 30DF

Abstract: FF1004 RGP10 DO-201AD BA150 BY290 30df FF1506 FF1504 BY398GP
Contextual Info: QUICK GUIDE Fast Recovery Rectifiers FAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V RGP08 1A 30A RGP08A RGP08B RGP08D FF1001 FF1002 FF1003 SERIES FF1000 1A 35A BA150GP 1A 35A 1N4930GP 1A 30A 1N4933GP RGP10A 1N4934GP 300V 400V 500V RGP08G

MOSFET 1000v 30a

Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
Contextual Info: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.

Contextual Info: Series STH Output to 50A, 660 Vac High Industrial Performance HIPak Solid-State Relays Part Number Description STH24D12 12A, 3-32 Vdc STH24D25 25A, 3-32 Vdc STH24D35 35A, 3-32 Vdc STH24D50 50A, 3-32 Vdc STH48D35 35A, 3-32 Vdc STH48D50 50A, 3-32 Vdc For RoHS Compliant Contact Factory

100C

Contextual Info: MCOTS-C-28V-1R8-QT Single Output Quarter-brick MILITARY COTS DC/DC CONVERTER 9-55V Transient Input 1.8V Output 35A Output 84% @ 17.5A / 81% @ 35A Efficiency a pu d bl va ic n at ce io d n 9-40V Continuous Input Full Power Operation: -55°C to +100°C Mil-COTS

Contextual Info: HE PV Type VDE Ideal for solar inverter compact size, 1a 35A/48A power relays HE RELAYS PV Type FEATURES • 35A/48A current at 250 V AC achieved in compact size L: 33 x W: 38 × H: 36.3 mm L: 1.299 × W: 1.496 × H: 1.429 inch Due to improved conduction efficiency,

solar pv inverter schematic

Contextual Info: HE PV Type VDE Ideal for solar inverter compact size, 1a 35A/48A power relays HE RELAYS PV Type FEATURES • 35A/48A current at 250 V AC achieved in compact size L: 33 x W: 38 × H: 36.3 mm L: 1.299 × W: 1.496 × H: 1.429 inch Due to improved conduction efficiency,

inverter circuit dc to ac 9V to 100V

Abstract: EN61810-1 VDE0126 VDE0435 ac1920 solar inverter HE1AN-P-DC12V-Y5
Contextual Info: HE PV Type VDE Ideal for solar inverter compact size, 1a 35A/48A power relays HE RELAYS PV Type FEATURES • 35A/48A current at 250 V AC achieved in compact size L: 33 x W: 38 × H: 36.3 mm L: 1.299 × W: 1.496 × H: 1.429 inch Due to improved conduction efficiency,

DH24D2

Contextual Info: Series DH Output to 35A, 600 Vac slimpac Solid-State Relays Part Number Description DH24D25 25A, 3-32 Vdc, 12-280 Vac DH48D35 35A, 3.5-32 Vdc, 24-600 Vac NOTES 1) Line Voltage (nominal): 24 = 240 Vac; 48 = 480 Vac 2) Switch Type: D = Zero-cross turn-on For RoHS Compliant Contact Factory

Contextual Info: Automation Controls Catalog VDE Compact size, 1 Form A 35A/48A power relays for solar inverter HE RELAYS PV Type FEATURES 1. 35A/48A current at 250 V AC achieved in compact size L: 33 x W: 38 × H: 36.3 mm L: 1.299 × W: 1.496 × H: 1.429 inch Due to improved conduction efficiency,

vqe 13

Abstract: APT35G60BN APT35G50BN APT35G60
Contextual Info: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: MCOTS-C-28V-1R8-QT Single Output Quarter-brick MILITARY COTS DC/DC CONVERTER 9-55V Transient Input 1.8V Output 35A Output 84% @ 17.5A / 81% @ 35A Eficiency a pu d bl va ic n at ce io d n 9-40V Continuous Input Full Power Operation: -55°C to +100°C The MilQor series of Mil-COTS DC/DC converters brings

APT35G60BN

Abstract: APT35G50BN T3BIA
Contextual Info: ADVANCED POWER T EC H N O L O G Y • D S S V S G 1! O Q O O b S l 3*10 M A V P ■ jjp j A d v a n c e d W/Æ PO W ER ^ - 3 1 A I B Te c h n o l o g y ® APT35G60BN APT35G50BN 600V 500V 35A 35A POW ER MOS IV |GBT N - C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE

ITR06148

Abstract: ITR06149 ITR06150 2SC3990 ITR06147
Contextual Info: Ordering number:ENN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC3990

Abstract: ITR06147 ITR06148 ITR06149 ITR06150 ER57
Contextual Info: Ordering number:ENN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

transistor 500v

Abstract: 2SC3990 DDHD137 2247T
Contextual Info: Ordering number : EN 2234C 2SC3990 N0.2234C NPN Triple Diffused P lanar Silicon Transistor SA\YO 500V/35A Switching Regulator Applications Features • High breakdown voltage, high reliability. • F ast switching speed. • WideASO. •Adoption of MBIT process.

1000V 20A transistor

Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Contextual Info: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30

APT5014

Abstract: APT5014BLL APT5014SLL
Contextual Info: APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT5014

Abstract: APT5014BFLL APT5014SFLL
Contextual Info: APT5014BFLL APT5014SFLL 500V 35A 0.140W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

25C2335

Contextual Info: APT5014BFLL APT5014SFLL 500V 35A 0.140W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

bridge rectifier single phase 240V AC

Abstract: 220v 100a diode bridge mosfet 3kw PFC 3kw 3kw mosfet 3kw pfc bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge bridge rectifier 240V AC 240v dc
Contextual Info: LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V AC input. System design time is dramatically

ZVT full bridge

Abstract: bridge rectifier single phase 240V AC high power class d 3kw pfc 220v 25a diode bridge 500 Watt Phase Shifted ZVT Power Converter PFC 3kw diode IV5 power module 48 volt rectifier circuit diagram zvt boost converter
Contextual Info: LRBH5010T 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LRBH5010T is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3kW, with a 220/240V AC input. System design is dramatically reduced

Contextual Info: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.14  typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C)

APT30DF60

Abstract: APT5014BFLL 319F APT5014SFLL
Contextual Info: APT5014BFLL APT5014SFLL 500V 35A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON