35JIM Search Results

marking STM

Contextual Info: STPR120A _ HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS 1A I f a v V rrm trr (max) 200 V 35 ns FEATURES AND BENEFITS • ■ ■ ■ VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE

Contextual Info: f Z T SGS-THOMSON mrJËm TS 8 2 0 -B SENSITIVE SCR FEATURES • It rm s = 8A ■ V d r m / V r r m = 400 to 600V ■ Ig t < 2 0 0 j i A DESCRIP TION T he T S 8 20 -B series of SCR use a high perform ­ ance T O P G LA S S PNPN te chnology. K T he parts are intended to r g eneral purpose a p p li­

TEA2262

Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Contextual Info: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION DOUBLE PULSE SUPPRESSION

til 071

Abstract: LS 1691 BM ERG INC 1715 SURT MAIN BOARD
Contextual Info: 5-Bit Synchronous CPU Controller with Power-Good and Current Limit D escription T he CS5166H is a sy n ch ro n o u s d u a l N FET Buck R egulator C ontroller. It is d esig n e d to p o w ­ er the core logic of th e latest h ig h p erfo rm an ce C PU s. It u ses th e

Contextual Info: rz 7 ^7# SGS-THOMSON G W M IL IiO T « ! STPS5L25B/B-1 -TR LOW DROP 3.3V POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 25 V V f (max) 0.35 V W FEATURES AND BENEFITS 4 (TAB) • VERY LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED

PO102A

Abstract: po102 MARKING SG SOT223 P0111AN P0109DN SOT223 marking SG P0102CN P0109AN HA2001
Contextual Info: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHiOiDOS POIxxxN SENSITIVE GATE SCR FEATURES • It rms =0.8A ■ V drm = 100V to 400V ■ Low I g t < 200 jiA DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended tor general purpose high

Contextual Info: rz 7 SGS-THOMSON ^7# G W M ILIiO T «! STPS8L30B _POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 30 V V f (max) 0.40 V FEATURES AND BENEFITS • LOW COST DEVICE WITH LOW DROP FOR­ WARD VOLTAGE FOR LESS POWER

lc 945 p transistor

Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Contextual Info: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

85039

Contextual Info: ViSHAY BFS17A/BFS17AR/BFS17AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band, low noise, small signal amplifiers up to UHFfrquencies, high speed logic applications and os­

702 Z smd TRANSISTOR

Abstract: SMD TRANSISTOR MARKING km 702 y smd TRANSISTOR transistor 702 smd power
Contextual Info: S949T/S949TR/S949TRW T Vishay Telefunken MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. A M Applications Low noise gain controlled input stages in UHF-and

PE21

Abstract: JS-52 RSM 037
Contextual Info: STPS3L25S LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 3 I f a v A V rrm 25 V Tj (max) 150°C V f (max) 0.44 V FEATURES AND BENEFITS • VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION ■ OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST

G21 SMB

Contextual Info: S T P S 2 H 1 0 0 A /U HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2A V rrm 100 V Tj (max) 175 °C V f (max) 0.65 V FEATURES AND BENEFITS SMA STPS2H100A • ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY

Contextual Info: E RECTRON RECTIFIER SPECIALISTS BZM55C 2 V 4 - 75V SILIICON PLANAR ZENER DIODES LS-31 MICRO-MELF GLASS PACKAGE MAXIMUM RATINGS DESCRIPTION Power Dissipation TEST CONDITIONS SYMBOL VALUE UNIT Rth(j-a)<300K/W Pd 500 mW T] 175 °C "^stg - 65 to +175 °c Junction to Ambient in free air

BFR92A

Abstract: FR92A
Contextual Info: BFR92A/BFR92AR/BFR92AW ViSHAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •

BLM21P331SG

Abstract: ze002 BLM31A601S blm murata p series MURATA BLM41 BLM31 BLM41P102SG BLM21P300 BLM41P750 BLM21P221sg
Contextual Info: BLM31A601S Page 1 o f 2 HOME ^ P roduct Iniont F in a n c ia l Infom ation tion i eark!0 0 About M urata j^Site Map Jont act ¡Search Engine ¡Catalog Library |Press Release [Design Support |Customer Support Home >Product Information >Search Engine >Catalog: BLM31A601S

FR4 epoxy glass 1.5mm substrate

Abstract: sheet metal press bending machine
Contextual Info: MOUNTING INSTRUCTIONS page Axial-leaded devices 562 SOT54 T092 563 SOT82 564 SOT78 (T0220AB); SOT186A 567 SOT223; SOT428; SOT4Q4 572 Philips Semiconductors Mounting instructions Axial-ieaded devices GENERAL DATA AND INSTRUCTIONS General rules Excessive forces or temperature applied to a diode may

Contextual Info: Z ìi STPS1L40A/U LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 1A V rrm Vf (max) 40 V PRELIMINARY DATASHEET 0.42 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD VOLTAGE DROP

Contextual Info: U810BS / U811BS / U812BS Tem ic S e m i c o n d u c t o r s 1.2-GHz Prescaler for PLLs in CATV and SAT TV l\iners Technology: Bipolar Features • High input sensitivity 64 • Low output impedance U811BS 128 • Low power consumption U812BS 256 • Electrostatic protection according to MIL-STD. 883

schottky marking 31 sma

Contextual Info: T ^ 7# S G S -T H O M S O N ra [M 5iHi©ir[H]©[M0©s S T P S 1 3 0 A /U SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS I f a v 1A V rrm 30 V V f (max) 0.46 V FEATURES AND BENEFITS • LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND LOW LEAKAGE

GL 100B

Contextual Info: rz 7 ^ 7 # SCS-THOMSON RfflO ËM LiOT®iO(gl STPS5H100B _ HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f (a v 5A Tj 175°C V f (max) 0.61 V FEATURES AND BENEFITS • HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED