36 W BALLAST Search Results

ST make transistor

Abstract: DSASW003740
Contextual Info: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant Description

Contextual Info: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct

transistor nec cel

Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

MAGNETICA

Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Contextual Info: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be

2.2 uf 50v electrolytic

Abstract: 1N4153 NEL2001 NEL200101-24
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

1N4153

Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:

IEC60081

Abstract: TRANSISTOR BC 534 PHYCOMP C1206 2222 861 12101 2322 730 61103 9338-123-60115 2222581 UBA2014 2222-581 pin diagram ic 7420
Contextual Info: UM10389 36 W TLD application with UBA2014 Rev. 01 — 2 October 2009 User manual Document information Info Content Keywords UBA2014, Half bridge driver Abstract The UBA2014 integrated half bridge driver IC has been designed for driving electronically ballasted fluorescent lamps.The IC provides the drive

Contextual Info: NCP5181BAL36WEVB NCP5181 36 W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this evaluation board user’s manual is to highlight the NCP5181

Zener diode 1N4148

Abstract: GENERIC CAPACITOR generic resistor 5V1 zener NCP5181 capacitor 220nF 400V vogt ELECTRONIC BALLAST 6 LAMP SCHEMATIC vogt r1 power supply ELECTRONIC BALLAST DIAGRAM
Contextual Info: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highlight the NCP5181 driver and not

zener diode 1n4148

Abstract: GENERIC CAPACITOR 5V1 zener generic resistor vogt r1 power supply resistor 2W specification of mosfet irf VOGT r6 VOGT r7 10 mf capacitor 400v
Contextual Info: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highly the NCP5181 driver and not to

Contextual Info: STEVAL-IHT001V1 Thermostat control demonstration board for refrigerators, based on the ST7Lite39 Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct u d o r P

TPV364

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers

J04036

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA J04036 The RF Line N P N S ilic o n V H F P o w e r T ra n sisto r 36 W — 175 M H z RF PO W E R T R A N S IS T O R N P N SIL IC O N . . . designed p rim a rily fo r 12.5 V olt w id e b a n d , large-signal a m p lifie r a p p lica tio n s in

2n2222 npn transistor

Contextual Info: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

acrian RF POWER TRANSISTOR

Abstract: ACRIAN acrian inc acrian RF POWER TRANSISTOR cd4792-4 20VoH ZD01 acrian H100-50
Contextual Info: .0182998, A C R I A N A C R IA N 9 Z D - A 14 36— INC DE J O l ö S ' m IN C QD D 14 3L , a ü S IÜ Ü S M iilB S H i!! G EN ER A L 2307 D E S C R IP TIO N 7.0 WATTS - 20 VOLTS 2300 MHfc The 2307 is a common base transistor capable of providing 7 watts of C W RF output power at 2300 MHz.

EN50294

Abstract: t8 ballast circuits ELECTRONIC BALLAST SK Electronic ballast 2x36 2x36w 1X55 220-240V ballast 2x36w tridonic t8 36w electronic ballast
Contextual Info: TC-L, T8 Electronic ballasts Linear lamps and compact lamps PC TCL PRO 36–55 W 220–240 V 50/60/0 Hz, single lamp and twin lamp RoHS 28 40 4,1 40 L D • defined lamp warm start < 1.5 s • constant light output independent of fluctuations in mains voltage

transistor j39

Abstract: J31 transistor
Contextual Info: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

PH2226-110M

Abstract: VCC36
Contextual Info: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

L6385D

Abstract: VOGT T5 504 AGILENT 6812B halfbridge design L6382 polyester capacitor 68n L6561 AN966 ST7LIT19BF1 MAGNETIC BALLAST SL0606301101
Contextual Info: AN2640 Application note Intelligent multipower digital ballast for fluorescent lamps Introduction Fluorescent lamps are highly popular due to their luminous efficiency, long life and color rendering. These lamps need external circuitry to compensate for their negative resistance

fluorescent ballasts 2 x 18W

Abstract: fluorescent ballasts 36w BTA 58 L31 plc 18W lamp BTA 36 L31 pl-s 9w BTA 36 Electronic ballast 11W BTA 16 6008 bta 18
Contextual Info: Electromagnetic ballasts for ‘TL’ fluorescent lamps 230 V/50 Hz, 230 V/50 Hz ‘Low loss’, 240 V/50 Hz Lamp control gear Definition All ‘BTA’ ballasts to be applied in circuits for ‘TL’, ‘TL’D, ‘TL’E or ‘TL’U fluorescent lamps, for

Contextual Info: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors