363M Search Results

Contextual Info: 363M Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363m max (@VGS = −1.8 V) Ron = 230m (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158m (max) (@VGS = −4.0 V)

88w8686

Abstract: wlsi ERNI RJ45 363ML EVB-363 CO2144 LLN4148 pc motherboard schematics NC7WZ04P6X
Contextual Info: Instant Internet Evaluation Board II-EVB-363MW/L/D rev. 2 User Manual Version 1.15 Copyright 2008,2009 Connect One Ltd. International: Connect One Ltd. 20 Atir Yeda Street Kfar Saba 44643, Israel Phone: +972-9-766-0456 Fax: +972-9-766-0461 Email: sales@connectone.com

Contextual Info: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V)

SSM3J108TU

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive • Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) 2.1±0.1 Ron = 230mΩ (max) (@VGS = −2.5 V) 1.7±0.1 DC Pulse

SSM3J108TU

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V)

Contextual Info: 363M5K 363 Series Trimmer, 5 kOhm, 0.5 W, 1 Turns, Square Body, Vertical Shaft Representative photograph, actual product appearance may vary. Features ● Due to regional agency approval requirements, some products may not be available in your area. Please contact your

Contextual Info: 363M1K 363 Series Trimmer, 1 kOhm, 0.5 W, 1 Turns, Square Body, Vertical Shaft Representative photograph, actual product appearance may vary. Features ● Due to regional agency approval requirements, some products may not be available in your area. Please contact your

SSM3J108TU

Contextual Info: SSM3J108TU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J108TU ○ 高速スイッチング ○ パワーマネジメントスイッチ 単位: mm 2.1±0.1 オン抵抗が低い 1.7±0.1 Ron = 363mΩ max (@VGS = -1.8 V) Ron = 230mΩ (max) (@VGS = -2.5 V)

Contextual Info: 363M10K 363 Series Trimmer, 10 kOhm, 0.5 W, 1 Turns, Square Body, Vertical Shaft Representative photograph, actual product appearance may vary. Features ● Due to regional agency approval requirements, some products may not be available in your area. Please contact your

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Unit: mm • 1.8V drive • Low on-resistance: 2.1±0.1 Ron = 363mΩ max (@VGS = −1.8 V) 1.7±0.1 Characteristic Symbol Rating Unit Drain-Source voltage

MT9M001

Abstract: MT9M001C12STM mps 0851 312H 48 pin clcc MT9M001C12
Contextual Info: MT9M001: 1/2-Inch Megapixel Digital Image Sensor Features 1/2-Inch Megapixel CMOS Digital Image Sensor MT9M001C12STM Monochrome For the latest data sheet, refer to Micron’s Web site: www.micron.com\imaging Features Table 1: • Micron DigitalClarity CMOS imaging technology

ADC1405X

Contextual Info: ADC1405X 0.13µ µm 10-BIT 80MSPS ADC GENERAL DESCRIPTION The adc1405x is a CMOS 10-bit low-voltage and high-speed A/D converter ADC for video and other applications. It has a three-step pipelined architecture, which consists of sample & hold amplifier, multiplying D/A

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: - PRE LIM IN AR Y- April 1996 Edition 2.2 FUJITSU PRO DUCT PROFILE SHEET M B 8 14405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

VIPER L2A RoHS

Abstract: Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK
Contextual Info: PL 3120 / PL 3150® Power Line Smart Transceiver Data Book @ ® Ve r s i o n 2 005-0154-01C Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, Neuron, LONMARK, 3120, 3150, the Echelon logo, and the LONMARK logo are registered trademarks of Echelon Corporation. LonMaker, LNS, i.LON, ShortStack, and LonSupport are trademarks of

GM71C4256A-80

Contextual Info: PRELIMINARY SPECIFICATION GM71C4256A 262,144 WORDS X 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71C4256A is the new generation dynam ic RAM organized 262,144 x 4 Bit. GM71C4256A has re­ 20 PLASTIC DIP alized higher density, higher perform ance and va­

uc3845 SCHEMATIC smps

Abstract: flyback MC34063 mc34063 flyback uc3845 power supply schematic flyback smps uc3845 uc3845 schematic MC34063 MOSFET UC3845 spice model MC34063 current source application notes mc34063
Contextual Info: MOTOROLA Order this document by AN1689/D SEMICONDUCTOR APPLICATION NOTE AN1689 Motorola's Solutions for Very Low Power in Standby Mode in Switchmode Power Supplies Christophe BASSO, MOTOROLA SPS, Toulouse Center Avenue Eisenhower,BP–1029, Le Mirail, 31023 Toulouse Cedex France

MAX1206

Abstract: MAX1207 MAX1208 MAX1209 MAX1211 MAX12553 MAX12553ETL MAX12555EVKIT
Contextual Info: 19-3343; Rev 0; 8/04 KIT ATION EVALU LE B A IL A AV 14-Bit, 65Msps, 3.3V ADC Features ♦ Direct IF Sampling Up to 400MHz ♦ Excellent Dynamic Performance 74.0dB/71dB SNR at fIN = 3MHz/175MHz 90.6dBc/80.7dBc SFDR at fIN = 3MHz/175MHz ♦ Low Noise Floor: -76dBFS

537m

Abstract: 897m
Contextual Info: SMD Shielded Type : CDRH * D * / * Standard Series CDRH5D16F/LD DIMENSIONS (mm) LAND PATTERNS (mm) 外形寸法図 ax 4. . 6 2 .7 M 8. 磁気構造図 Max. 5.5 1. 8 CDRH5D16 DIMENSIONS (mm) LAND PATTERNS (mm) WIRE 線種 2 1. Max.1.8 推奨ランド寸法

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

RG6 coaxial cable

Abstract: RG59 coaxial cable belden RG179 comtran rg58 coaxial cable IBM type 1 RG58 CABLE characteristics of twisted pair cable twisted pair cable rg179 attenuation
Contextual Info: fax id: 5105 HOTLink Copper Interconnect— Maximum Length vs. Frequency Introduction • HP8116A pulse/function generator The most common question asked about any serial interface is, “How long of a link can I have?” The answer comes down to a mixture of transmission line characteristics, and the jitter