366MBPS Search Results

HY5DU283222Q

Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Contextual Info: HY5DU283222Q 128M 4Mx32 GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02

DA65

Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Contextual Info: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.

K4D263238M-QC40

Abstract: K4D263238
Contextual Info: Preliminary 128M DDR SDRAM K4D263238M 222 / 250 MHz 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.1 March 2001 Samsung Electronics reserves the right to change products or specification without notice.

K4D623238B-QC50

Contextual Info: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

Contextual Info: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02

K4D623238B-GC45

Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q Revision 0.8 March 2001 Rev. 0.8 / Mar. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU663222Q CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3

Contextual Info: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3

Contextual Info: HY5DU641622AT 64M 4Mx16 DDR SDRAM HY5DU641622AT Revision 0.6 April 2001 Rev. 0.6 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DU641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3

Contextual Info: HY5DU643222AQ 64M 2Mx32 DDR SDRAM HY5DU643222AQ Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU643222AQ CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3

K4D62323HA

Abstract: k4d62323ha-qc60 samsung ddr-3
Contextual Info: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.

HY5DU283222Q

Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Contextual Info: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02

K4D623238B-QC50

Contextual Info: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.

hy5du663222

Abstract: HY5DU663222Q-6
Contextual Info: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Dec. 01

Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.6 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 128M DDR SDRAM K4D263238A-G 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.

K4D263238

Abstract: K4D263238M-QC40
Contextual Info: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.

K4D623238B-QC50

Abstract: K4D623238B-QC55
Contextual Info: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.

HY5DV641622AT

Contextual Info: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3

Contextual Info: 64M 4Mx16 DDR SDRAM H Y 5 D V 6 4 1 6 2 2 A T Revision 0.3 April 2001 T his docum ent is a general product description and is subject to change w ithout notice. 85 HY5DV641622AT 64Mb(4Mx16) Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the

K4C560838C-TCD3

Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

K4D623238B-GC45

Abstract: K4D623238B-GC K4D623238B-GC33 K4D623238B-GC40 K4D623238B-GC50 K4D623238B-GC55 K4D623238B-GC60
Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 September 2002 Samsung Electronics reserves the right to change products or specification without notice.

HY5DU283222Q

Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Contextual Info: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Nov. 01