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    367V Search Results

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    Toshiba America Electronic Components TLP2367(V4-TPL,E

    OPTOISO 3.75KV PUSH PULL 6-SO
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    DigiKey () TLP2367(V4-TPL,E Digi-Reel 274 1
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    TLP2367(V4-TPL,E Cut Tape 274 1
    • 1 $2.46
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    TLP2367(V4-TPL,E Reel 3,000
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    Avnet Americas TLP2367(V4-TPL,E Reel 16 Weeks 3,000
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    Mouser Electronics TLP2367(V4-TPL,E
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    Vyrian TLP2367(V4-TPL,E 1,926
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    NXP Semiconductors MC56F8367VPYE

    IC MCU 16BIT 512KB FLASH 160LQFP
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    DigiKey MC56F8367VPYE Tray 227 1
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    Avnet Americas MC56F8367VPYE Tray 13 Weeks 200
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    Mouser Electronics MC56F8367VPYE 400
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    Newark MC56F8367VPYE Bulk 200
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    Chip 1 Exchange MC56F8367VPYE 1
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    Avnet Silica MC56F8367VPYE 15 Weeks 40
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    EBV Elektronik MC56F8367VPYE 120 15 Weeks 40
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    Asahi Kasei Microsystems Corporation AK4367VN

    IC DAC 24BIT V-OUT 20QFN
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    Renesas Electronics Corporation DF2367VF33V

    IC MCU 16BIT 384KB FLASH 128QFP
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    DigiKey DF2367VF33V Tray 72
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    Renesas Electronics Corporation DF2367VTE33V

    IC MCU 16BIT 384KB FLASH 120TQFP
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    367V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APT5523BFLL APT5523SFLL 550V 24A 0.230Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5523BFLL APT5523SFLL O-247 PDF

    APT55M50JFLL

    Contextual Info: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel


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    APT55M50JFLL OT-227 APT55M50JFLL PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan
    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    APT5531BFLL

    Abstract: APT5531SFLL
    Contextual Info: APT5531BFLL APT5531SFLL 550V 19A 0.310Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT5531BFLL APT5531SFLL O-247 O-247 APT5531BFLL APT5531SFLL PDF

    APT5510B2FLL

    Abstract: APT5510LFLL
    Contextual Info: APT5510B2FLL APT5510LFLL 550V 49A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5510B2FLL APT5510LFLL O-264 O-264 O-247 APT5510B2FLL APT5510LFLL PDF

    APT55M65JFLL

    Abstract: max9165
    Contextual Info: APT55M65JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.065Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel


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    APT55M65JFLL OT-227 APT55M65JFLL max9165 PDF

    UJ 78A

    Abstract: APT55M65L2FLL
    Contextual Info: APT55M65L2FLL 550V POWER MOS 7 R 78A 0.065Ω FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT55M65L2FLL O-264 O-264 UJ 78A APT55M65L2FLL PDF

    SOOW 12-4 IF

    Abstract: electronic ballast schematic 12volt schematic diagram Electronic Ballast Metal Halide 8R4006 ELECTRONIC BALLAST T5 8w LAMP SCHEMATIC LR6837 LT 9228 500w dc to dc supply 150w hid electronic ballast schematic circuit diagram 92536N
    Contextual Info: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the


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    WT3C-20 WT3F-20 WT6C-25 WT6C-50 WT6F-25 WT6F-50 Y560B Y560CF Y560PF Y560R SOOW 12-4 IF electronic ballast schematic 12volt schematic diagram Electronic Ballast Metal Halide 8R4006 ELECTRONIC BALLAST T5 8w LAMP SCHEMATIC LR6837 LT 9228 500w dc to dc supply 150w hid electronic ballast schematic circuit diagram 92536N PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan
    10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    319F

    Abstract: APT5518BFLL APT5518SFLL
    Contextual Info: APT5518BFLL APT5518SFLL 550V 31A 0.180Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT5518BFLL APT5518SFLL O-247 O-247 319F APT5518BFLL APT5518SFLL PDF

    APT5513B2FLL

    Abstract: APT5513LFLL
    Contextual Info: APT5513B2FLL APT5513LFLL 550V 41A 0.130Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5513B2FLL APT5513LFLL O-264 O-264 O-247 APT5513B2FLL APT5513LFLL PDF

    a 3120v

    Abstract: electronic transformer halogen 12v 60W 12V 70W hid ballast PAR56 METAL HALIDE 400W 1635-12A 302SRLCA 61430 electronic transformer halogen 12v 35W
    Contextual Info: PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the innovative series of HAZTEX h a z a rdous duty lights for wide are a


    Original
    portable/41 PL13/41 26/41/4P a 3120v electronic transformer halogen 12v 60W 12V 70W hid ballast PAR56 METAL HALIDE 400W 1635-12A 302SRLCA 61430 electronic transformer halogen 12v 35W PDF

    500w pioneer power amp circuit diagram

    Abstract: 600va ups circuit diagrams ELECTRONIC BALLAST DIAGRAM for PL-C 26W Electronic ballast 40W using 13005 transistor hp 3120v METAL HALIDE 400W schematic diagram Electronic Ballast Metal Halide 27W08MB 68W81 a 3120v
    Contextual Info: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the


    Original
    WT3C-20 WT3F-20 WT6C-25 WT6C-50 WT6F-25 WT6F-50 Y560B Y560CF Y560PF Y560R 500w pioneer power amp circuit diagram 600va ups circuit diagrams ELECTRONIC BALLAST DIAGRAM for PL-C 26W Electronic ballast 40W using 13005 transistor hp 3120v METAL HALIDE 400W schematic diagram Electronic Ballast Metal Halide 27W08MB 68W81 a 3120v PDF

    DXN-Q

    Abstract: 3b84 B0648 ABB DKR IC GEC 20A4 4A20 B064 fg176 au952
    Contextual Info: fagUZ fjbW Uag`fWdGf[_Wd V[` {s-o iOJ.ZKNvvD iLP.ZLPvvD iOJ.ZOJvv Ux}w|ozGfsvoz ASB Ux}w|oz 0Xok|}zo{ 7{4:42B01:4 m=C<B4@ =@ |8;4@ 5C<2B8=< 7|74 ;=AB D0@8=CA 5C<2B8=<Xgah[hag 98<3A =5 5C<2B8=<Y 7y@4A20:4 5C<2B8=< 7y@=6@0;01:4 2=C<B A>443 B= `_92>A 7l0B27 2=C<B4@ 5C<2B8=< 5=@ m|e[ m|e\ay =<:G


    Original
    42B01 7l0B27 38D83C0: DXN-Q 3b84 B0648 ABB DKR IC GEC 20A4 4A20 B064 fg176 au952 PDF

    236F

    Abstract: APT5523BFLL APT5523SFLL di 2417
    Contextual Info: APT5523BFLL APT5523SFLL 550V 24A 0.230Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5523BFLL APT5523SFLL O-247 O-247 236F APT5523BFLL APT5523SFLL di 2417 PDF

    APT5510JFLL

    Contextual Info: APT5510JFLL 550V 44A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5510JFLL OT-227 APT5510JFLL PDF