36A 69 DIODE DATASHEET Search Results

Contextual Info: CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 36A , RDS ON = 18mΩ(typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

SFP36N03

Abstract: SFP36 rg105
Contextual Info: SFP36N03 Advanced Power MOSFET FEATURES BVDSS = 30 V • Avalanche Rugged Technology RDS on = 0.018Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 36 A ■ Improved Gate Charge ■ Extended Safe Operating Area TO-220 ■ Lower Leakage Current : 10 A (Max.) @ VDS = 30V

FDP24AN06LA0

Abstract: diode marking N9 356 FDP24AN FDB24AN06LA0 KP-69
Contextual Info: FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FDD24AN06LA0

Abstract: mosfet 30V 18A TO 252
Contextual Info: FDD24AN06LA0 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

BU 508 AF mosfet

Abstract: AN-994 IRF1310N IRF1310NS IRF530S 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1514A IRF1310NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V

Contextual Info: CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 36A , RDS ON = 18mΩ(typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

Contextual Info: CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 36A , RDS ON = 18mΩ(typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

DIODE 1334 smd

Abstract: TH 2267 HA 13164 B0139 smd diode 1334
Contextual Info: PD-2.178A International Rectifier L io R j i s t . s e r i e s q 18 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 18TQ. Units lF AV Rectangular waveform 18 A 35 to 45 V VRRM ‘fsm 1P " 5 M#*ne 1800

IRLU2905

Abstract: U2905 AN-994 IRLR2905 IRLZ44N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1334A IRLR/U2905 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-Resistance l Surface Mount IRLR2905 l Straight Lead (IRLU2905) l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated

1.5ke 390

Abstract: Diode 1.5KE300A 1.5KE33A 1.5ke22a 1.5KE27CA transil 1.5KE-33A 1.5KE30A 1.5KE-200A ST 1.5KE39A 1.5KE300A
Contextual Info: 1.5KE Transil Datasheet − production data Features • Peak pulse power: 1500 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 440 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ UL 497B file number: QVGQ2.E136224

1.5KE-200A ST

Abstract: 1.5KE transil diode diode 1.5ke 39A 1.5ke 390 diode 1.5ke 200A diode 1.5ke diode 1.5ke 300a diode 1.5ke 350ca Diode 1.5KE300A diode 1.5 ke 36 ca
Contextual Info: 1.5KE Transil Datasheet − production data Features • Peak pulse power: 1500 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 440 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ UL 497B file number: QVGQ2.E136224

NEC 32bit Processor

Abstract: cq 447 philips receiver 787
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: User Manual -Installation -Operation Replus-3000TL Replus-4000TL Replus-5000TL ReneSola User Manual

FDMS7650

Contextual Info: FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mΩ Features General Description „ Advanced Package and Silicon combination for low rDS on and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

FDMS7650

Abstract: FDMS
Contextual Info: FDMS7650 N-Channel PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features General Description „ Advanced Package and Silicon combination for low rDS on and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMS7650 N-Channel PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features General Description ̈ Advanced Package and Silicon combination for low rDS on and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the

2SD618

Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

Contextual Info: Using the UCD3138HSFBEVM-029 User's Guide Literature Number: SLUUA95 March 2013 User's Guide SLUUA95 – March 2013 Digitally Controlled Hard-Switching Full-Bridge DC-DC Converter 1 Introduction This EVM, UCD3138HSFBEVM-029 is to help evaluate the UCD3138RHA 40-pin digital control device in

SLUUA95

Abstract: UCD3138HSFBEVM-029 User's Guide
Contextual Info: Using the UCD3138HSFBEVM-029 User's Guide Literature Number: SLUUA95 March 2013 User's Guide SLUUA95 – March 2013 Digitally Controlled Hard-Switching Full-Bridge DC-DC Converter 1 Introduction This EVM, UCD3138HSFBEVM-029 is to help evaluate the UCD3138RHA 40-pin digital control device in

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

ic 67a smd

Abstract: EPC2C8 smd optocoupler cop 200 CB851 CB651 altera cyclone 2 cb650 U121D PCM-980 0/sharp 21A U12 circuit diagram
Contextual Info: phyCORE-MPC5200B FPGA Hardware Manual Edition February 2006 A product of a PHYTEC Technology Holding company phyCORE-MPC5200B FPGA In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark and copyright ( ) symbols

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets